公开(公告)号：US06935928B2

公开(公告)日：2005-08-30

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

摘要翻译： 化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸 酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。 根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

公开(公告)号：US20050037693A1

公开(公告)日：2005-02-17

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

公开(公告)号：US06924227B2

公开(公告)日：2005-08-02

申请号：US09932943

申请日：2001-08-21

申请人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Nobuo Kawahashi ,  Masayuki Hattori ,  Kazuo Nishimoto

发明人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Nobuo Kawahashi ,  Masayuki Hattori ,  Kazuo Nishimoto

IPC分类号： H01L21/304 ,  C09G1/02 ,  C09K3/14 ,  H01L21/4763

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.

摘要翻译： 制造半导体装置的方法在制造工序中使用用于化学抛光的浆料，所述浆料含有包含一次粒径为5〜30nm的胶体粒子的研磨粒子，其中，一次粒子的缔合度为5 或更少。 这种用于化学机械抛光的浆料使得每当对导电材料膜进行CMP处理时，可以最小化侵蚀和刮擦。

公开(公告)号：US06653267B2

公开(公告)日：2003-11-25

申请号：US09893961

申请日：2001-06-29

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C11D328

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

公开(公告)号：US20060276041A1

公开(公告)日：2006-12-07

申请号：US11433508

申请日：2006-05-15

申请人： Kazuhito Uchikura ,  Tomohisa Konno ,  Nobuo Kawahashi ,  Masayuki Hattori

发明人： Kazuhito Uchikura ,  Tomohisa Konno ,  Nobuo Kawahashi ,  Masayuki Hattori

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt % and the component (B) in an amount of 0.005 to 1.5 wt %, having a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.

摘要翻译： 化学机械抛光水分散体，包括：（A）无机颗粒; （B）选自有机颗粒和有机 - 无机复合颗粒的至少一种类型的颗粒; （C）至少一种选自喹啉羧酸，喹啉酸，二价有机酸（不包括喹啉酸）和羟基酸的化合物; （D）至少一种选自苯并三唑和苯并三唑衍生物的化合物; （E）氧化剂; 和（F）水，含有0.05〜2.0重量％的成分（A）的化学机械研磨用水系分散体和0.005〜1.5重量％的成分（B），其比例（W

公开(公告)号：US20060201914A1

公开(公告)日：2006-09-14

申请号：US11369870

申请日：2006-03-08

申请人： Kazuhito Uchikura ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuhito Uchikura ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09K13/00 ,  C03C15/00 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %.

摘要翻译： 化学机械抛光水性分散体，包括：（A）研磨剂; （B）有机酸; （C）苯并三唑或苯并三唑衍生物; （D）聚（甲基）丙烯酸酯; （E）氧化剂; 和（F）水，研磨剂（A）以2〜10重量％的量包含在化学机械研磨用水系分散体中。

公开(公告)号：US06579153B2

公开(公告)日：2003-06-17

申请号：US09756193

申请日：2001-01-09

申请人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21283

CPC分类号： C23F3/04 ,  C09G1/02 ,  H01L21/3212

摘要： There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5≦RCu/RBM≦2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5≦RCu/RIn≦2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0

摘要翻译： 提供了用于CMP的水性分散体，其可以有效地抛光铜膜和阻挡金属膜，这可以提供足够的平整的成品表面而不过度抛光绝缘膜，以及使用水分散体的CMP方法。 根据本发明的CMP水分散体的特征在于，在相同条件下对铜膜，阻挡金属膜和绝缘膜进行抛光，铜膜（RCu）和屏障（RCu）的抛光速率比（RCu / RBM） 金属膜（RBM）使得0.5 <= RCu / RBM <= 2，铜膜（RCu）和绝缘膜（RIn）的研磨速度比（RCu / RIn）使得0.5 <= RCu / RIn <= 2。 根据本发明的CMP的其它水分散体的特征在于它们含有研磨剂，杂环化合物，有机酸和氧化剂，并且在相同条件下用于抛光铜膜，阻挡金属膜和绝缘膜， 铜膜（RCu）和阻挡金属膜（RBM）的研磨速度比（RCu / RBM）为0

公开(公告)号：US06786944B2

公开(公告)日：2004-09-07

申请号：US10412385

申请日：2003-04-14

申请人： Masayuki Hattori ,  Michiaki Ando ,  Kazuo Nishimoto ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Michiaki Ando ,  Kazuo Nishimoto ,  Nobuo Kawahashi

IPC分类号： C09G102

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.1 to 30% by mass, respectively, when the total proportion of the aqueous medium, ceria particles, preservative and organic component is 100% by mass, and wherein the pH of this aqueous dispersion can be kept in a neutral range.

摘要翻译： 用于化学机械抛光的水性分散体难以腐蚀，几乎不引起划痕，仅导致小的凹陷，并且适合用于半导体器件生产中的微层间电介质的微隔离步骤或平面化步骤，该分散体包括二氧化铈 颗粒，由具有在环中含有氮原子和硫原子的杂环结构的化合物组成的防腐剂，例如异噻唑酮化合物，以及有机成分，例如由树脂颗粒组成的分散剂，由 包含在水性介质中的具有特定分子量的水溶性聚合物，表面活性剂和/或有机酸或其盐，其中二氧化铈颗粒，防腐剂和有机组分的含量为0.1〜20％ 质量，0.001〜0.2质量％和0.1〜30质量％，当水性介质，二氧化铈颗粒， 防腐剂和有机成分为100质量％，并且其中该水分散体的pH可以保持在中性范围。

公开(公告)号：US06582761B1

公开(公告)日：2003-06-24

申请号：US09716384

申请日：2000-11-21

申请人： Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B05D136

CPC分类号： C08J3/12 ,  C08J3/215 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1445 ,  C09K3/1454 ,  H01L21/31058 ,  H01L21/3212 ,  Y10T428/2991 ,  Y10T428/2995

摘要： The present invention relates to a method for producing a composited particle in which an inorganic particle is not released, a composited particle produced by this method, and an aqueous dispersion for CMP containing this composited particle. The method for producing a composited particle of the present invention comprises forming a preliminary particle by adhering one or more types of inorganic particles on at least a part of the surface area of a polymer particle, then, polycondensing at least one selected from among organosilicon compounds and organometal compounds in the presence of the above-mentioned preliminary particle.

摘要翻译： 本发明涉及无机颗粒不释放的复合颗粒的制造方法，通过该方法制造的复合颗粒和含有该复合颗粒的CMP的水性分散体。 本发明的复合粒子的制造方法包括：在聚合物粒子的表面积的至少一部分上粘附一种以上的无机粒子，然后将选自有机硅化合物 和有机金属化合物在上述初步颗粒存在下进行。

公开(公告)号：US07550020B2

公开(公告)日：2009-06-23

申请号：US11180619

申请日：2005-07-14

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09G1/02 ,  C09G1/04

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

摘要翻译： 化学机械研磨用水分散体包含浓度为1.5质量％以下的研磨剂，其中研磨剂包含二氧化铈，平均分散粒径不小于1.0μm。 化学机械抛光方法包括通过使用化学机械抛光水分散体抛光绝缘膜。 通过使用化学机械研磨水分散体，可以抑制抛光划痕的发生，而不降低去除率。