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    Thin film EL element and process for producing the same
    3.
    发明授权
    Thin film EL element and process for producing the same 失效
    薄膜EL元件及其制造方法

    公开(公告)号：US4857802A

    公开(公告)日：1989-08-15

    申请号：US100758

    申请日：1987-09-24

    申请人： Moriaki Fuyama ,  Katsumi Tamura ,  Kazuo Taguchi ,  Kenichi Onisawa ,  Akira Sato ,  Kenichi Hashimoto ,  Takahiro Nakayama ,  Yoshio Abe

    发明人： Moriaki Fuyama ,  Katsumi Tamura ,  Kazuo Taguchi ,  Kenichi Onisawa ,  Akira Sato ,  Kenichi Hashimoto ,  Takahiro Nakayama ,  Yoshio Abe

    IPC分类号： C23C14/00 ,  C23C14/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/22

    CPC分类号： H05B33/10 ,  C23C14/0036 ,  C23C14/088 ,  H05B33/22

    摘要： A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.

    摘要翻译： 1.一种薄膜EL元件，其特征在于，包括：绝缘基板，透明电极，第一绝缘层，发光层，第二绝缘层和背面电极， 绝缘层由具有钙钛矿晶体结构的材料构成，例如SrTiO 3，PbTiO 3或BaTiO 3层，特别是SrTiO 3层。 具有钙钛矿晶体结构的材料具有增加的（111）面取向，使得（111）面与（110）面的衍射强度比I（111）/ I（110）大于0.5。 该材料可以是具有（111）面取向的单晶。 该材料通过溅射沉积，在衬底温度不低于200℃，直到绝缘衬底的软化点，并且压力不大于1×10 -2 Torr。 该材料具有高介电常数，高介电强度，因此具有低驱动电压的元件性能的高可靠性。

    Electroluminescent device
    6.
    发明授权
    Electroluminescent device 失效
    电致发光器件

    公开(公告)号：US5200277A

    公开(公告)日：1993-04-06

    申请号：US454961

    申请日：1989-12-22

    申请人： Takahiro Nakayama ,  Kenichi Onisawa ,  Katsumi Tamura ,  Kazuo Taguchi ,  Akira Sato ,  Kenichi Hashimoto ,  Yoshio Abe ,  Masanobu Hanazono

    发明人： Takahiro Nakayama ,  Kenichi Onisawa ,  Katsumi Tamura ,  Kazuo Taguchi ,  Akira Sato ,  Kenichi Hashimoto ,  Yoshio Abe ,  Masanobu Hanazono

    IPC分类号： C23C14/08 ,  H05B33/10 ,  H05B33/22

    CPC分类号： H05B33/22 ,  C23C14/08 ,  H05B33/10 ,  Y10S428/917 ,  Y10T428/24975 ,  Y10T428/265

    摘要： An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.

    摘要翻译： 一种电致发光器件，包括电介质膜，每个电介质膜由具有强自愈型电介质击穿特性的材料制成的第一区域，由具有强传播型电介质击穿特性的材料制成的第二区域，以及由混合物组成的混合区域 在这两种材料中，第一和第二区域在膜厚度方向上交替地与它们之间的混合区域布置，这两种材料在混合区域中的混合比以这样的方式变化，使得一种材料的比例从 该材料的区域朝向另一材料的相邻区域，即另一种材料的比例增加。 因此，电介质膜在膜厚方向上的这两种材料的混合比的变化是连续的和周期性的。 具有高击穿场强度的这些电介质膜使得可以获得具有大的驱动电压余量并提供高亮度的发光的电致发光器件。

    Liquid crystal display device
    10.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US06731364B2

    公开(公告)日：2004-05-04

    申请号：US10101166

    申请日：2002-03-20

    申请人： Takuya Takahashi ,  Toshiki Kaneko ,  Katsumi Tamura ,  Kenichi Onisawa

    发明人： Takuya Takahashi ,  Toshiki Kaneko ,  Katsumi Tamura ,  Kenichi Onisawa

    IPC分类号： G02F11343

    CPC分类号： G02F1/136286 ,  G02F1/134363 ,  G02F2001/13629

    摘要： A liquid crystal display device has image signal lines of a bottom gate type TFT, in which the image signal lines comprise a laminated film formed of a first conductive film disposed as a lower layer and a second conductive film disposed as an upper layer. The first conductive film is made of an alloy comprising Mo as a main ingredient and W, and the second conductive film is made of an alloy comprising Mo as a main ingredient and Zr. The device is capable of satisfying requirements of reduced resistance, improved dry etching resistance, selective wet etching with respect to the gate insulative film, the number of laminated layer of two or less, and tapered fabrication for the cross section.

    摘要翻译： 液晶显示装置具有底栅型TFT的图像信号线，其中图像信号线包括由布置为下层的第一导电膜和作为上层布置的第二导电膜形成的层叠膜。 第一导电膜由以Mo为主成分的合金和W构成，第二导电膜由以Mo为主成分的合金和Zr构成。 该装置能够满足降低电阻，改善的耐干蚀刻性，相对于栅极绝缘膜的选择性湿蚀刻，层叠层数为2以下的截面以及截面的锥形制造的要求。