公开(公告)号：US07459187B2

公开(公告)日：2008-12-02

申请号：US10577235

申请日：2004-10-27

申请人： Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori ,  Junichi Ebisawa ,  Kazuo Sato ,  Yukio Yoshikawa

发明人： Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori ,  Junichi Ebisawa ,  Kazuo Sato ,  Yukio Yoshikawa

IPC分类号： H05H1/24

CPC分类号： H01J37/32449 ,  C23C16/45589 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/67017

摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

摘要翻译： 本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。 为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面 （24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转 作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。 通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上 ）。

公开(公告)号：US20070134414A1

公开(公告)日：2007-06-14

申请号：US10577235

申请日：2004-10-27

申请人： Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori ,  Junichi Ebisawa ,  Kazuo Sato ,  Yukio Yoshikawa

发明人： Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori ,  Junichi Ebisawa ,  Kazuo Sato ,  Yukio Yoshikawa

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32449 ,  C23C16/45589 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/67017

摘要： An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

摘要翻译： 本发明的目的是使得可以以更简单和更低成本的方式将气体均匀地供应到基材上，从而实现高质量的表面处理。 为此，通过在基材12的表面上沿特定方向供给表面处理气体来对基材12进行表面处理，转子的圆周表面具有圆筒形周面 （24）经由间隙（23）面对，形成在与基材分离的位置处的基材（12）或相对构件（20）的表面，并且转子围绕轴线旋转 作为供给表面处理气体的装置，几乎垂直于基材（12） - 输送方向的方向。 通过旋转，表面处理气体被转子（24）的外周表面拖动，被引导到间隙（23）中，然后从间隙（23）进给到基体材料（12）的表面上 ）。

公开(公告)号：US07897025B2

公开(公告)日：2011-03-01

申请号：US10973249

申请日：2004-10-27

申请人： Kenichi Inoue ,  Hiroyuki Takamatsu ,  Takashi Kobori ,  Kazushi Hayashi ,  Toshihiro Kugimiya

发明人： Kenichi Inoue ,  Hiroyuki Takamatsu ,  Takashi Kobori ,  Kazushi Hayashi ,  Toshihiro Kugimiya

IPC分类号： C23C14/00

CPC分类号： C23C14/35 ,  C23C14/228 ,  C23C14/26 ,  H01J37/32009

摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

摘要翻译： 具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。 包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。 成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。 结果，抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而不需要大型设备。

公开(公告)号：US20090098311A1

公开(公告)日：2009-04-16

申请号：US12331638

申请日：2008-12-10

申请人： Nobutaka AOMINE ,  Yuki Aoshima ,  Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori

发明人： Nobutaka AOMINE ,  Yuki Aoshima ,  Kazushi Hayashi ,  Toshihiro Kugimiya ,  Takashi Kobori

IPC分类号： H05H1/46

CPC分类号： C23C16/505 ,  C23C16/40 ,  C23C16/54 ,  H01J37/32 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32761

摘要： When a thin film is formed on a substrate by means of a plasma under a pressure atmosphere close to the atmospheric pressure, it is possible to control particles to be formed by a reaction of a reaction gas and to form a uniform thin film constantly, even when the space between an electrode and the substrate is set to be wider than a conventional method.An electric power is supplied to a cylindrical rotating electrode 12 whose rotational axis is parallel to a substrate, to generate a plasma in a space between this rotating electrode 12 and the substrate S, and a supplied reaction gas G is activated by means of the generated plasma to form a thin film on the substrate S, is wherein a high-frequency electric power having a frequency of from 100 kHz to 1 MHz is supplied to the rotating electrode 12.

摘要翻译： 当在接近大气压的压力气氛下通过等离子体在基板上形成薄膜时，可以通过反应气体的反应来控制形成的颗粒，并且能够均匀地形成均匀的薄膜，甚至 当电极和衬底之间的空间被设定为比常规方法宽时。 向旋转轴平行于基板的圆筒状旋转电极12供给电力，在该旋转电极12与基板S之间的空间中产生等离子体，通过所产生的反应气体G 在衬底S上形成薄膜的等离子体，其中具有100kHz至1MHz频率的高频电力被提供给旋转电极12。

公开(公告)号：US20050136694A1

公开(公告)日：2005-06-23

申请号：US10973249

申请日：2004-10-27

申请人： Kenichi Inoue ,  Hiroyuki Takamatsu ,  Takashi Kobori ,  Kazushi Hayashi ,  Toshihiro Kugimiya

发明人： Kenichi Inoue ,  Hiroyuki Takamatsu ,  Takashi Kobori ,  Kazushi Hayashi ,  Toshihiro Kugimiya

IPC分类号： C23C14/34 ,  C23C14/24 ,  C23C14/26 ,  C23C14/35 ,  C23C16/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： C23C14/35 ,  C23C14/228 ,  C23C14/26 ,  H01J37/32009

摘要： A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. The rotor peripheral surface is also opposed to a film-forming material supplying member having a film-forming material on its surface at a position apart from the position where the rotor faces the substrate. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like can be suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

摘要翻译： 具有圆筒形周面的转子设置在其中引入载气的处理容器中，并且转子外周表面与基板的表面之间具有预定的间隙。 转子外周表面也与在其表面上离开转子面向基板的位置的表面上的成膜材料供给构件相对。 包括成膜材料的原子分子和簇粒子的成膜颗粒通过溅射从成膜材料供给构件的表面散射，转子旋转以在转子周边表面附近形成载气流。 成膜微粒通过载气流输送到基板的表面附近并粘附到基板的表面。 结果，可以抑制高能粒子等的不利影响，通过蒸发或溅射法有效地形成令人满意的薄膜，对原料气体的限制较少，而无需大型设备。

公开(公告)号：US20050051930A1

公开(公告)日：2005-03-10

申请号：US10972672

申请日：2004-10-26

申请人： Nobuyuki Kawakami ,  Takashi Kobori ,  Toshihiro Kugimiya

发明人： Nobuyuki Kawakami ,  Takashi Kobori ,  Toshihiro Kugimiya

IPC分类号： C23C26/00 ,  B29C71/00 ,  B32B27/00 ,  B81C1/00 ,  H01L21/027

CPC分类号： B81C1/00928 ,  B81C1/00841 ,  B81C1/0092 ,  Y10T428/31855 ,  Y10T428/31928

摘要： The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.

摘要翻译： 本发明提供由精细结构和形成在其上的保护膜构成的精细结构复合体。 在使用液化或超临界流体的高压室中干燥精细结构的步骤之前使用精细结构复合材料，并且保护膜由高粘度材料形成。 当使用液化或超临界流体干燥显影后的半导体基板等微细结构时，防止诸如基板的精细结构的表面自发干燥，结果，防止了表面上的图案 从崩溃。

公开(公告)号：US20070039666A1

公开(公告)日：2007-02-22

申请号：US11497370

申请日：2006-08-02

申请人： Kazushi Hayashi ,  Toshihiro Kugimiya

发明人： Kazushi Hayashi ,  Toshihiro Kugimiya

IPC分类号： C23C16/40 ,  C23C16/513

CPC分类号： H01L23/49586 ,  C23C16/401 ,  H01L23/3142 ,  H01L2924/0002 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/00

摘要： A copper base for an electronic component includes a silicon oxide thin film containing at least one of a hydrocarbon group and a hydroxy group is used, the silicon oxide thin film being disposed on a surface of the copper base. Furthermore, a silicon-containing reaction gas is decomposed by generating plasma. The resulting decomposition product is brought into contact with the copper base to form a silicon oxide thin film on a surface of the copper base.

摘要翻译： 用于电子部件的铜基包括使用含有烃基和羟基中的至少一个的氧化硅薄膜，氧化硅薄膜设置在铜基材的表面上。 此外，含硅反应气体通过产生等离子体而分解。 使所得的分解产物与铜基接触，在铜基材的表面上形成氧化硅薄膜。

公开(公告)号：US10468535B2

公开(公告)日：2019-11-05

申请号：US13636255

申请日：2011-04-07

申请人： Shinya Morita ,  Toshihiro Kugimiya ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

发明人： Shinya Morita ,  Toshihiro Kugimiya ,  Takeaki Maeda ,  Satoshi Yasuno ,  Yasuaki Terao ,  Aya Miki

IPC分类号： C23C14/34 ,  H01L29/786 ,  H01L21/02 ,  C23C14/08

摘要： Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.

公开(公告)号：US09212418B2

公开(公告)日：2015-12-15

申请号：US11931197

申请日：2007-10-31

申请人： Masaya Ehira ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

发明人： Masaya Ehira ,  Katsutoshi Takagi ,  Toshihiro Kugimiya ,  Yoichiro Yoneda ,  Hiroshi Gotou

IPC分类号： C23C14/34 ,  C23C4/08 ,  C23C4/12 ,  C22C21/00 ,  B22F9/08 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  H01J37/34

CPC分类号： C23C14/3414 ,  B22F3/115 ,  B22F3/15 ,  B22F3/17 ,  B22F3/18 ,  B22F9/082 ,  B22F2998/10 ,  C22C21/00 ,  C23C4/08 ,  C23C4/123 ,  H01J37/3426 ,  H01J37/3429

摘要： The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.

摘要翻译： 本发明涉及Al-Ni-La系Al基合金溅射靶，其中Al-Ni系金属间化合物的总面积相对于整个Al的总面积为0.3μm至3μm的平均粒径 -Ni系金属间化合物的面积率为70％以上，平均粒径为0.2μm〜2μm的Al-La系金属间化合物的总面积相对于Al的整个面积的总面积 -La系金属间化合物的面积分数为70％以上。

公开(公告)号：US09153536B2

公开(公告)日：2015-10-06

申请号：US14117531

申请日：2012-05-16

申请人： Hiroyuki Okuno ,  Toshihiro Kugimiya ,  Yoshihiro Yokota ,  Takeaki Maeda

发明人： Hiroyuki Okuno ,  Toshihiro Kugimiya ,  Yoshihiro Yokota ,  Takeaki Maeda

IPC分类号： H01L29/15 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296 ,  H01L23/532 ,  H01J37/34 ,  C22C21/02 ,  C22C21/00 ,  C22C21/12 ,  C22C21/14 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L23/53219 ,  C22C21/00 ,  C22C21/02 ,  C22C21/12 ,  C22C21/14 ,  C22F1/04 ,  C23C14/165 ,  C23C14/3414 ,  H01J37/3429 ,  H01L21/2855 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/45 ,  H01L29/452 ,  H01L2924/0002 ,  Y10T428/12431 ,  H01L2924/00

摘要： Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 μm. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 μΩcm or less.

摘要翻译： 提供一种用于半导体器件的Al合金膜，其耐热性优异，并且即使在Al合金膜暴露于高温的情况下也能抑制小丘的产生，并且作为膜具有低电阻率。 本发明涉及一种用于半导体器件的Al合金膜，其特征在于，在将Al合金膜保持在500℃进行热处理之后，满足下述所有特征（a） - （c） 30分钟，膜厚500nm〜5μm。 （a）Al基体的最大粒径为800nm以下。 （b）小丘密度小于1×109个/ m2。 （c）电阻率为10μΩ·cm以上。