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    POWER SEMICONDUCTOR DEVICE
    2.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20070215903A1

    公开(公告)日：2007-09-20

    申请号：US11685802

    申请日：2007-03-14

    申请人： Kozo Sakamoto ,  Toshiaki Ishii

    发明人： Kozo Sakamoto ,  Toshiaki Ishii

    IPC分类号： H01L31/00

    CPC分类号： H01L25/072 ,  H01L23/49844 ,  H01L23/5383 ,  H01L23/5385 ,  H01L25/115 ,  H01L25/117 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599

    摘要： A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

    摘要翻译： 一种功率半导体器件，具有第一半导体区域和第二半导体区域; 安装在第一半导体区域中的由第三半导体区域包围的半导体衬底主表面上的第一电极焊盘和具有第一和第二布线层的多层衬底，以取出半导体芯片的电极; 通过导电材料将安装在多层基板上的第一电极的第一布线层部分与由第三半导体区域包围的内部的半导体基板主表面相对的区域和第一电极焊盘接合; 将第一电极的第一布线层部分和导电部分的第二布线层接合; 并且在由所述第三半导体区域包围的内部将所述第二布线层延伸到与所述半导体基板主表面相对的区域的外部。

    Synchronous rectifier circuit and power supply
    3.
    发明授权
    Synchronous rectifier circuit and power supply 有权
    同步整流电路和电源

    公开(公告)号：US07005834B2

    公开(公告)日：2006-02-28

    申请号：US10882672

    申请日：2004-07-02

    申请人： Takayuki Iwasaki ,  Kozo Sakamoto ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Tomoaki Uno

    发明人： Takayuki Iwasaki ,  Kozo Sakamoto ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Tomoaki Uno

    IPC分类号： G05F1/613 ,  G05F1/656

    CPC分类号： H02M3/1588 ,  Y02B70/1466

    摘要： In a power supply of a synchronous rectification type, the self-turn on phenomenon of MOSFET is suppressed without increase of the drive loss to thereby improve the power efficiency. In a synchronous rectifier circuit, a threshold value of a commutation MOSFET is made higher than that of a rectification MOSFET and particularly a threshold value of a commutation MOSFET 3 is made 0.5V or more higher than that of a rectification MOSFET 2. The threshold value of the rectification MOSFET 2 is lower than 1.5V and the threshold of the commutation MOSFET 3 is higher than 2.0V.

    摘要翻译： 在同步整流型的电源中，不增加驱动损耗来抑制MOSFET的自转导通现象，从而提高功率效率。 在同步整流电路中，使换向MOSFET的阈值高于整流MOSFET的阈值，特别是使换向MOSFET 3的阈值比整流MOSFET2的阈值高0.5V以上。 整流用MOSFET2的阈值低于1.5V，换流用MOSFET3的阈值高于2.0V。

    Synchronous rectifier circuit and power supply
    4.
    发明申请
    Synchronous rectifier circuit and power supply 有权
    同步整流电路和电源

    公开(公告)号：US20050007078A1

    公开(公告)日：2005-01-13

    申请号：US10882672

    申请日：2004-07-02

    申请人： Takayuki Iwasaki ,  Kozo Sakamoto ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Tomoaki Uno

    发明人： Takayuki Iwasaki ,  Kozo Sakamoto ,  Masaki Shiraishi ,  Nobuyoshi Matsuura ,  Tomoaki Uno

    IPC分类号： H02M7/21 ,  H02M3/155 ,  H02M3/158 ,  G05F1/652

    CPC分类号： H02M3/1588 ,  Y02B70/1466

    摘要： In a power supply of a synchronous rectification type, the self-turn on phenomenon of MOSFET is suppressed without increase of the drive loss to thereby improve the power efficiency. In a synchronous rectifier circuit, a threshold value of a commutation MOSFET is made higher than that of a rectification MOSFET and particularly a threshold value of a commutation MOSFET 3 is made 0.5V or more higher than that of a rectification MOSFET 2. The threshold value of the rectification MOSFET 2 is lower than 1.5V and the threshold of the commutation MOSFET 3 is higher than 2.0V.

    摘要翻译： 在同步整流型的电源中，不增加驱动损耗来抑制MOSFET的自转导通现象，从而提高功率效率。 在同步整流电路中，使换向MOSFET的阈值高于整流MOSFET的阈值，特别是使换向MOSFET 3的阈值比整流MOSFET2的阈值高0.5V以上。阈值 的整流用MOSFET2的电压低于1.5V，换流用MOSFET3的阈值高于2.0V。

    POWER SEMICONDUCTOR DEVICE
    5.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20090179321A1

    公开(公告)日：2009-07-16

    申请号：US12407041

    申请日：2009-03-19

    申请人： Kozo Sakamoto ,  Toshiaki Ishii

    发明人： Kozo Sakamoto ,  Toshiaki Ishii

    IPC分类号： H01L23/12

    CPC分类号： H01L25/072 ,  H01L23/49844 ,  H01L23/5383 ,  H01L23/5385 ,  H01L25/115 ,  H01L25/117 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599

    摘要： A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region.

    摘要翻译： 一种功率半导体器件，具有第一半导体区域和第二半导体区域; 安装在第一半导体区域中的由第三半导体区域包围的半导体衬底主表面上的第一电极焊盘和具有第一和第二布线层的多层衬底，以取出半导体芯片的电极; 通过导电材料将安装在多层基板上的第一电极的第一布线层部分与由第三半导体区域包围的内部的半导体基板主表面相对的区域和第一电极焊盘接合; 将第一电极的第一布线层部分和导电部分的第二布线层接合; 并且在由所述第三半导体区域包围的内部将所述第二布线层延伸到与所述半导体基板主表面相对的区域的外部。

    SEMICONDUCTOR CIRCUIT
    6.
    发明申请
    SEMICONDUCTOR CIRCUIT 有权
    半导体电路

    公开(公告)号：US20080205100A1

    公开(公告)日：2008-08-28

    申请号：US12028364

    申请日：2008-02-08

    申请人： Kozo Sakamoto

    发明人： Kozo Sakamoto

    IPC分类号： H02M7/06

    CPC分类号： H03K17/6871 ,  H02M3/07 ,  H02M3/1588 ,  H02M2003/1555 ,  H03K17/165 ,  H03K17/691 ,  H03K17/785 ,  H03K2017/6875 ,  H03K2217/0036 ,  Y02B70/1466

    摘要： A synchronous rectifying drive type semiconductor circuit wherein voltages between drains and sources of power switching elements are detected, temporarily held and compared with a reference voltage. First control signals are generated for turning on the power switching elements depending on comparison result and dead times for the power switching elements are minimized by ORing first control signals and second control signals inputted at input terminals. The first control signals cause the power switching elements to be in “on” state for a constant time until the second control signals as “on” control signals arrive at the input terminals, and then the first control signals as “on” control signals are terminated before the second control signals as “off” signals arrive at the input terminals, thereby swiftly turning off the power switching elements by the second control signals arriving at the input terminals.

    摘要翻译： 同时整流驱动型半导体电路，其中检漏电源开关元件的漏极和电源之间的电压，暂时保持并与参考电压进行比较。 产生用于根据比较结果接通功率开关元件的第一控制信号，并且通过对在输入端输入的第一控制信号和第二控制信号进行或运算来最小化功率开关元件的死区时间。 第一控制信号使功率开关元件处于“接通”状态一直到第二控制信号为“接通”控制信号到达输入端，然后第一控制信号为“接通”控制信号 在第二控制信号作为“关闭”信号到达输入端之前终止，从而通过到达输入端的第二控制信号迅速关闭功率开关元件。

    Semiconductor circuit
    8.
    发明授权
    Semiconductor circuit 有权
    半导体电路

    公开(公告)号：US07952339B2

    公开(公告)日：2011-05-31

    申请号：US12028364

    申请日：2008-02-08

    申请人： Kozo Sakamoto

    发明人： Kozo Sakamoto

    IPC分类号： G05F1/575 ,  G05F1/618

    CPC分类号： H03K17/6871 ,  H02M3/07 ,  H02M3/1588 ,  H02M2003/1555 ,  H03K17/165 ,  H03K17/691 ,  H03K17/785 ,  H03K2017/6875 ,  H03K2217/0036 ,  Y02B70/1466

    摘要： A synchronous rectifying drive type semiconductor circuit wherein voltages between drains and sources of power switching elements are detected, temporarily held and compared with a reference voltage. First control signals are generated for turning on the power switching elements depending on comparison result and dead times for the power switching elements are minimized by ORing first control signals and second control signals inputted at input terminals. The first control signals cause the power switching elements to be in “on” state for a constant time until the second control signals as “on” control signals arrive at the input terminals, and then the first control signals as “on” control signals are terminated before the second control signals as “off” signals arrive at the input terminals, thereby swiftly turning off the power switching elements by the second control signals arriving at the input terminals.

    摘要翻译： 同时整流驱动型半导体电路，其中检漏电源开关元件的漏极和电源之间的电压，暂时保持并与参考电压进行比较。 产生用于根据比较结果接通功率开关元件的第一控制信号，并且通过对在输入端输入的第一控制信号和第二控制信号进行或运算来最小化功率开关元件的死区时间。 第一控制信号使功率开关元件处于“接通”状态一直到第二控制信号为“接通”控制信号到达输入端，然后第一控制信号为“接通”控制信号 在第二控制信号作为“关闭”信号到达输入端之前终止，从而通过到达输入端的第二控制信号迅速关闭功率开关元件。

    Driver circuit for switching device
    9.
    发明申请
    Driver circuit for switching device 失效
    开关装置的驱动电路

    公开(公告)号：US20070221994A1

    公开(公告)日：2007-09-27

    申请号：US11657692

    申请日：2007-01-25

    申请人： Katsumi Ishikawa ,  Sunao Funakoshi ,  Kozo Sakamoto ,  Hidekatsu Onose

    发明人： Katsumi Ishikawa ,  Sunao Funakoshi ,  Kozo Sakamoto ,  Hidekatsu Onose

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A driver circuit that lowers the dependence of the loss in the wide gap semiconductor device upon the temperature is provided. A gate driver circuit for voltage driven power semiconductor switching device includes a power semiconductor switching device, a driver circuit for supplying a drive signal to a gate terminal of the switching device with reference to an emitter control terminal or a source control terminal of the switching device, and a unit for detecting a temperature of the switching device. The temperature of the power semiconductor switching device is detected, and a gate drive voltage or a gate drive resistance value is changed based on the detected temperature.

    摘要翻译： 提供了降低宽间隙半导体器件中的损耗对温度的依赖性的驱动电路。 用于电压驱动的功率半导体开关器件的栅极驱动器电路包括功率半导体开关器件，驱动器电路，用于参照开关器件的发射极控制端子或源极控制端子向开关器件的栅极端子提供驱动信号 ，以及用于检测开关装置的温度的单元。 检测功率半导体开关器件的温度，并且基于检测到的温度改变栅极驱动电压或栅极驱动电阻值。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20070221953A1

    公开(公告)日：2007-09-27

    申请号：US11689659

    申请日：2007-03-22

    申请人： Kozo Sakamoto

    发明人： Kozo Sakamoto

    IPC分类号： H01L29/74

    CPC分类号： H01L21/8213 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/2003 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7816

    摘要： A semiconductor device such as a reverse blocking type switching element is provided with a switching element made of a wide band gap semiconductor on the side of a first major plane where a first terminal is formed, while the wide band gap semiconductor is operable at a high voltage and in low loss. In a reverse blocking type switching element having a hetero junction diode for blocking a reverse direction current on the side of a second major plane where a second terminal is formed, a silicon semiconductor region is provided in a side surface of the semiconductor so as to prevent a deterioration of a withstanding voltage of the hetero junction diode.

    摘要翻译： 诸如反向阻挡型开关元件的半导体器件在其上形成有第一端子的第一主平面侧上设置有由宽带隙半导体制成的开关元件，而宽带隙半导体可操作于高电平 电压低损耗。 在具有用于阻挡形成第二端子的第二主平面侧的反向电流的异质结二极管的反向阻断型开关元件中，在半导体的侧面设置硅半导体区域，以防止 异质结二极管的耐压降低。