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16 条记录 (耗时 0.021 秒)

    POWER STORAGE DEVICE, ELECTRODE, AND ELECTRIC DEVICE
    1.
    发明申请
    POWER STORAGE DEVICE, ELECTRODE, AND ELECTRIC DEVICE 审中-公开
    电力存储装置，电极和电气装置

    公开(公告)号：US20110294005A1

    公开(公告)日：2011-12-01

    申请号：US13102645

    申请日：2011-05-06

    申请人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Hideki MATSUKURA

    发明人： Kazutaka KURIKI ,  Mikio YUKAWA ,  Hideki MATSUKURA

    IPC分类号： H01M4/02

    CPC分类号： H01M4/661 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/667 ,  H01M4/70 ,  H01M10/0525 ,  Y02T10/7011

    摘要： An object is to improve characteristics of a power storage device by devising the shape of an active material layer. The characteristics of the power storage device can be improved by providing a power storage device including a first electrode, a second electrode, and an electrolyte provided between the first electrode and the second electrode. The second electrode includes an active material layer. The active material layer includes a plurality of projecting portions containing an active material and a plurality of particles containing an active material, which are arranged over the plurality of projecting portions or in a space between the plurality of projecting portions.

    摘要翻译： 目的是通过设计活性物质层的形状来改善蓄电装置的特性。 通过提供包括第一电极，第二电极和设置在第一电极和第二电极之间的电解质的电力存储装置，能够提高蓄电装置的特性。 第二电极包括活性物质层。 活性物质层包括多个突出部分，其包含活性材料和多个含有活性材料的颗粒，其布置在多个突出部分上或多个突出部分之间的空间中。

    ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    能源储存装置及其制造方法

    公开(公告)号：US20110294011A1

    公开(公告)日：2011-12-01

    申请号：US13109083

    申请日：2011-05-17

    申请人： Kazutaka KURIKI ,  Mikio YUKAWA

    发明人： Kazutaka KURIKI ,  Mikio YUKAWA

    IPC分类号： H01M4/58 ,  B05D5/12 ,  H01M4/04 ,  H01G9/00 ,  H01G9/04

    CPC分类号： H01G11/26 ,  H01G11/30 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/661 ,  Y02E60/13

    摘要： An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion.

    摘要翻译： 提供了一种放电容量可以较高的能量存储装置和/或能够减少由于重复充放电导致的电极劣化的能量存储装置。 提供了包含作为活性物质层的结晶硅层的储能装置的电极。 晶体硅层包括晶体硅区域和具有从晶体硅区域向上突出的多个突起的晶须状结晶硅区域。 突起包括第一突起和第二突起; 所述第二突起沿着所述轴线具有较大的长度，并且比所述第一突起更尖锐。

    POWER STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    POWER STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    蓄电装置及其制造方法

    公开(公告)号：US20110294010A1

    公开(公告)日：2011-12-01

    申请号：US13113237

    申请日：2011-05-23

    申请人： Mikio YUKAWA

    发明人： Mikio YUKAWA

    IPC分类号： H01M4/66 ,  H01G9/15 ,  C23C16/44 ,  C23C14/34 ,  C23C14/08

    CPC分类号： H01G11/30 ,  C23C14/08 ,  C23C14/3414 ,  H01G11/26 ,  H01G11/32 ,  H01G11/50 ,  H01M4/0421 ,  H01M4/133 ,  H01M4/136 ,  H01M4/1393 ,  H01M4/1397 ,  H01M4/366 ,  H01M4/5805 ,  H01M4/587 ,  H01M10/0525 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

    摘要： It is an object to perform insertion and extraction of lithium ions effectively at a positive electrode of a power storage device so as to increase the reaction speed. Further, it is an object to increase the capacitance per unit volume of an active material of a positive electrode. A layer containing carbon and an active material layer are stacked at a positive electrode, whereby insertion and extraction of lithium ions are effectively performed at the positive electrode and reaction speed can be increased, even when the thickness of the positive electrode is increased. The active material layer interposed between the layers each containing carbon includes particulate crystals and therefore has high density, so that the active material can have large capacitance per unit volume.

    摘要翻译： 本发明的目的是在蓄电装置的正极上有效地进行锂离子的提取，提高反应速度。 此外，其目的是增加正极活性物质的每单位体积电容。 在正极层叠含有碳和活性物质层的层，能够在正极上有效地进行锂离子的插拔，即使增加正极的厚度，也能够提高反应速度。 插入在各自含有碳的层之间的活性物质层包括颗粒状晶体，因此具有高密度，使得活性物质可以具有每单位体积的大的电容。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100295034A1

    公开(公告)日：2010-11-25

    申请号：US12847352

    申请日：2010-07-30

    申请人： Hiroko ABE ,  Yuji IWAKI ,  Mikio YUKAWA ,  Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Yasuko WATANABE ,  Yoshitaka MORIYA

    发明人： Hiroko ABE ,  Yuji IWAKI ,  Mikio YUKAWA ,  Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Yasuko WATANABE ,  Yoshitaka MORIYA

    IPC分类号： H01L51/00 ,  H01L23/52 ,  H01L45/00

    CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

    摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

    摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120108029A1

    公开(公告)日：2012-05-03

    申请号：US13295304

    申请日：2011-11-14

    申请人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Ryoji NOMURA ,  Yoshinobu ASAMI

    发明人： Mikio YUKAWA ,  Nobuharu OHSAWA ,  Ryoji NOMURA ,  Yoshinobu ASAMI

    IPC分类号： H01L21/02

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/285 ,  H01L51/0591

    摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.

    摘要翻译： 本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。 半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。 此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造 包括绝缘体。

    MEMORY DEVICE AND A SEMICONDUCTOR DEVICE
    9.
    发明申请
    MEMORY DEVICE AND A SEMICONDUCTOR DEVICE 有权
    存储器件和半导体器件

    公开(公告)号：US20110186802A1

    公开(公告)日：2011-08-04

    申请号：US13085727

    申请日：2011-04-13

    申请人： Mikio YUKAWA

    发明人： Mikio YUKAWA

    IPC分类号： H01L45/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/13 ,  H01L51/52

    摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.

    摘要翻译： 本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。 此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。 存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂 电子和空穴的能量以及可与光敏氧化还原剂反应的物质。

    POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    电力存储装置及其制造方法

    公开(公告)号：US20110236757A1

    公开(公告)日：2011-09-29

    申请号：US13049407

    申请日：2011-03-16

    申请人： Mikio YUKAWA ,  Tamae MORIWAKA

    发明人： Mikio YUKAWA ,  Tamae MORIWAKA

    IPC分类号： H01M4/58 ,  H01M4/26 ,  C23C14/34 ,  C23C14/06

    CPC分类号： H01M4/5825 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3492 ,  H01M4/0404 ,  H01M4/0426 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/366 ,  H01M10/052 ,  H01M2004/021 ,  Y10T29/49108 ,  Y10T29/49115

    摘要： A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFejPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.

    摘要翻译： 提供了具有良好的电池特性的蓄电装置及其制造方法。 蓄电装置至少包括正电极和负电极，所述正电极和负电极设置成面对正电极，其间设置有电解质。 正极包括集电体和在集电体上含有活性材料的膜。 含有活性物质的膜含有满足3.5＆nlE; h / g＆nlE; 4.5,0.6＆amp; nlE; g / f＆nlE; 1.1和0＆amp; nEE; e / f＆nlE; 1.3和LiaFebPcOd的关系的LiFejPgOh满足3.5＆nlE; d / c＆nlE; 4.5,0.6 ＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8。 含有活性物质的膜含有与电解质接触的区域中满足3.5＆nlE; d / c＆nlE; 4.5,0.6＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8的关系的LiaFebPcOd。