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公开(公告)号：US5034921A
公开(公告)日：1991-07-23
申请号：US375983
申请日：1989-07-06
申请人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
发明人： Kazutoshi Nakajima , Hirofumi Kan , Kenichi Sugimoto , Yoshihiko Mizushima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Toru Hirohata , Takashi Iida
摘要： An optical memory circuit comprises two photodetectors, and an intermediate signal conductor for connecting the two photodetectors, wherein the two photodetectors and the signal conductor are connected in series in a closed circuit, wherein each of the photodetectors comprises two spaced Schottky electrodes symmetrically disposed on a semiconductor substrate and the signal conductor has a capacitance with a time constant of a potential of the signal conductor such that charges are stored in the signal conductor when an optical write signal is incident on one photodetector and stored charges are released from the signal conductor when an optical read signal is incident on the other photodetector.
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公开(公告)号：US5068815A
公开(公告)日：1991-11-26
申请号：US541309
申请日：1990-06-21
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Tomoko Suzuki , Hirofumi Kan
摘要： SUM and CARRY output signals of a first optical half adder are provided to one input terminal of a second optical half adder and an optical latch memory, respectively, and an output signal of the optical latch memory is provided to the other input terminal of the second optical half adder. Input and output of the two optical half adders and optical latch memory are performed through an optical signal. Each optical half adder includes two light-receiving elements each having a symmetrical electrode arrangement in which two Schottky junctions are connected to each other opposite in polarity, and peripheral elements of resistors, a capacitor and an amplifier. The optical latch memory is an optical flip-flop memory in which a high-speed light-receiving element produces an electric signal in response to an input optical signals, and a high-speed light-emitting element produces, in response to the electric signal guided from the light-receiving element, feed-back light to be applied to the light-receiving element and an output optical signal.
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公开(公告)号：US5109358A
公开(公告)日：1992-04-28
申请号：US423203
申请日：1989-10-17
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
CPC分类号： G11C11/42
摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.
摘要翻译： 一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射 响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件 光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括 通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号 环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。
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公开(公告)号：US5051573A
公开(公告)日：1991-09-24
申请号：US435739
申请日：1989-11-14
申请人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
发明人： Yoshihiko Mizushima , Kazutoshi Nakajima , Toru Hirohata , Takashi Iida , Yoshihisa Warashina , Kenichi Sugimoto , Hirofumi Kan
IPC分类号： H03K19/14
CPC分类号： H03K19/14
摘要： A plurality of ultra-high speed light receiving elements are provided each of which has two rectifier junctions being connected to each other opposite in polarity and has a substantially symmetrical electrode arrangement. A bias voltage is applied to each of the light receiving elements from one or a plurality of power sources. Electrical signals produced by the light receiving elements in response to input optical pulse signals are superposed on one another to produce one or a plurality of output electrical signals representing a predetermined logic operation with respect to the input optical pulse signals. Depending on the arrangement of its elements, the optical logic operation system functions as an OR circuit, AND circuit, NOT circuit, EXCLUSIVE OR circuit, or half-adder circuit.
摘要翻译： 提供了多个超高速光接收元件，每个超高速光接收元件具有彼此相反极性连接的两个整流器接头，并且具有基本上对称的电极布置。 偏置电压从一个或多个电源施加到每个光接收元件。 响应于输入光脉冲信号由光接收元件产生的电信号彼此重叠以产生表示相对于输入光脉冲信号的预定逻辑运算的一个或多个输出电信号。 根据其元件的布置，光逻辑操作系统用作OR电路，AND电路，NOT电路，EXCLUSIVE OR电路或半加法器电路。
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公开(公告)号：US5020064A
公开(公告)日：1991-05-28
申请号：US393275
申请日：1989-08-14
申请人： Yoshihiko Mizushima , Takashi Iida , Toru Hirohata , Kenichi Sugimoto , Yoshihisa Warashina , Kazutoshi Nakajima
发明人： Yoshihiko Mizushima , Takashi Iida , Toru Hirohata , Kenichi Sugimoto , Yoshihisa Warashina , Kazutoshi Nakajima
CPC分类号： H01S3/0903
摘要： An electromagnetic wave device having an amplification function comprises a medium containing free carriers, means for applying a magnetic field to the medium, means for applying an input electromagnetic wave to the medium in a direction perpendicular to the magnetic field, and means for generating an electric field to accelerating the carriers in the direction of the input electromagnetic wave. A frequency of the input electromagnetic wave is within the range of the plasma frequency plus or minus the cyclotron frequency, and a polarization direction of the input electromagnetic wave is perpendicular both to the magnetic field and its own traveling direction. Furthermore, the device has such functions as oscillation, modulation, frequency conversion, etc. depending on the type of added units.
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公开(公告)号：US5138191A
公开(公告)日：1992-08-11
申请号：US546753
申请日：1990-07-02
申请人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
发明人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
CPC分类号： H01J1/308 , H01J1/34 , H01J2201/3423
摘要： A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.
摘要翻译： 在导电电极和半导体之间形成诸如肖特基结的结。 在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。 在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。 半导体是半绝缘的，或者在其中形成p-n结。
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公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译： 半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。 第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。 此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。 第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。
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公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译： 半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合， 做异质结。 第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物 半导体层可以沉积在第一III-V族化合物半导体层上。 第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。
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公开(公告)号：US5336902A
公开(公告)日：1994-08-09
申请号：US956283
申请日：1992-10-05
申请人： Minoru Nigaki , Tuneo Ihara , Toru Hirohata , Tomoko Suzuki , Kimitsugu Nakamura , Norio Asakura , Masami Yamada , Yasuharu Negi , Tomihiko Kuroyanagi , Yoshihiko Mizushima
发明人： Minoru Nigaki , Tuneo Ihara , Toru Hirohata , Tomoko Suzuki , Kimitsugu Nakamura , Norio Asakura , Masami Yamada , Yasuharu Negi , Tomihiko Kuroyanagi , Yoshihiko Mizushima
CPC分类号： H01J1/34
摘要： This invention relates to a semiconductor photo-electron-emitting device for emitting photoelectrons excited from the valence band to the conduction band by incident photons on a semiconductor layer. The device includes a Schottky electrode formed on the emitting surface on a surface of the semiconductor layer, and a conductor layer formed on a surface opposite to the emitting surface. A set bias voltage is applied between the Schottky electrode and the conductor layer to accelerate photoelectrons generated by the excitation of incident photons to the emitting surface and to transfer the accelerated photoelectrons from an energy band of a smaller effective mass to an energy band of a larger effective mass.
摘要翻译： 本发明涉及一种半导体光电子发射器件，用于通过半导体层上的入射光子发射从价带激发到导带的光电子。 该器件包括形成在半导体层的表面上的发光表面上的肖特基电极和形成在与发射表面相对的表面上的导体层。 在肖特基电极和导体层之间施加设定的偏置电压，以加速由入射光子激发到发射表面产生的光电子，并将加速光电子从较小有效质量的能带转移到较大的能带 有效质量。
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公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译： 本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光 支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。
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