公开(公告)号：US20120288970A1

公开(公告)日：2012-11-15

申请号：US13468408

申请日：2012-05-10

申请人： Kazuyuki HASHIMOTO ,  Tatsufumi KUSUDA

发明人： Kazuyuki HASHIMOTO ,  Tatsufumi KUSUDA

IPC分类号： H01L21/66 ,  F27D11/00 ,  H01L21/324

CPC分类号： H01L21/67115 ,  F27B17/0025 ,  G01J5/0007 ,  G01J5/026 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.

摘要翻译： 在半导体晶片上的闪光照射开始之后，半导体晶片的前表面和背面的温度变得彼此相等时，具有已知发射率的半导体晶片的背表面的温度用辐射 温度计。 基于来自具有相同温度的黑体与其后表面的温度的辐射光的强度以及从其表面的实际辐射的辐射强度来计算半导体晶片的前表面的发射率 半导体晶片。 然后，基于计算的发射率和在闪光照射开始后测量的半导体晶片的前表面的辐射强度来计算由闪光照射加热的半导体晶片的正面的温度。

公开(公告)号：US20120288261A1

公开(公告)日：2012-11-15

申请号：US13468381

申请日：2012-05-10

申请人： Kazuyuki HASHIMOTO ,  Tatsufumi KUSUDA

发明人： Kazuyuki HASHIMOTO ,  Tatsufumi KUSUDA

IPC分类号： F27D11/12

CPC分类号： F27B17/0025 ,  F27D5/0037 ,  H01L21/67115 ,  H01L21/67248

摘要： A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.

摘要翻译： 用于从半导体晶片的表面接收辐射光的光检测器元件由于在闪光灯发光的同时接收光的强度超过检测极限而失去检测功能。 在上述期间不进行测量，在闪光灯停止发光后测量来自半导体晶片表面的辐射光的强度，并且光电检测元件恢复检测功能。 然后，基于测定的照射光的强度，计算通过照射闪光而加热的半导体晶片的表面的温度。 因此，即使在短时间内进行强烈照射的情况下，例如闪光照射，闪光也不会作为环境光，而能够获得半导体晶片的表面温度。

公开(公告)号：US20120076476A1

公开(公告)日：2012-03-29

申请号：US13109169

申请日：2011-05-17

申请人： Tatsufumi KUSUDA ,  Kazuyuki HASHIMOTO

发明人： Tatsufumi KUSUDA ,  Kazuyuki HASHIMOTO

IPC分类号： F27D11/12

CPC分类号： F27B17/0025 ,  F27D11/12 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/68792

摘要： A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps.

摘要翻译： 响应性优异的光电二极管在通过照射闪光而加热半导体晶片的过程中接收从闪光灯发出的光的闪光，并且使用从输出获得的电压数据获取光的闪光强度的波形 从光电二极管。 然后，温度计算部使用获取的数据进行热传导模拟，以计算从闪光灯照射的闪光的半导体晶片的温度。 使用与从光电二极管的输出获得的闪光的强度对应的数据来计算半导体晶片的温度。 这允许确定用闪光灯照射的半导体晶片的表面温度，而与闪光灯的发射强度的波形无关。

公开(公告)号：US20120067864A1

公开(公告)日：2012-03-22

申请号：US13229884

申请日：2011-09-12

申请人： Tatsufumi KUSUDA ,  Toshiaki AOTANI ,  Shinji MIYAWAKI

发明人： Tatsufumi KUSUDA ,  Toshiaki AOTANI ,  Shinji MIYAWAKI

IPC分类号： H05B1/00

CPC分类号： H01L21/67115

摘要： When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

摘要翻译： 当半导体晶片被卤素灯预热时，半导体晶片的周边部分的温度低于其中心部分的温度。 在半导体晶片的中心附近设置的激光发射部分围绕半导体晶片的中心线旋转，同时激光从激光发射部分朝向半导体晶片的周边部分引导。 因此，离开激光发射部分的激光的照射点沿着半导体晶片的背面的周边部分旋转以画出圆形轨迹。 结果，半导体晶片在较低温度下的整个周边部分被均匀地加热。 这实现了半导体晶片的均匀的面内温度分布。

公开(公告)号：US20070084848A1

公开(公告)日：2007-04-19

申请号：US11560635

申请日：2006-11-16

申请人： Tatsufumi KUSUDA

发明人： Tatsufumi KUSUDA

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： H01L21/67115 ,  C30B31/12

摘要： A heat treating apparatus includes halogen lamps for preheating a semiconductor wafer to 400 to 600 degC., and xenon flash lamps for heating the substrate preheated by the halogen lamps, to 1,000 to 1,100 degC. in about 0.1 to 10 milliseconds by irradiating the wafer with flashes of light.

摘要翻译： 热处理装置包括用于将半导体晶片预热至400至600摄氏度的卤素灯和用于将由卤素灯预热的衬底加热的氙闪光灯至1000至1100摄氏度。 通过用闪光灯照射晶片约0.1至10毫秒。

公开(公告)号：US20070229657A1

公开(公告)日：2007-10-04

申请号：US11692378

申请日：2007-03-28

申请人： Tatsufumi KUSUDA

发明人： Tatsufumi KUSUDA

IPC分类号： H04N7/18 ,  H04N9/47

CPC分类号： G03B27/42 ,  H01L21/67115 ,  H01L21/68792

摘要： A reflector is so provided as to entirely cover a plurality of flash lamps arranged in parallel with one another. The reflector reflects flash light emitted from the flash lamps. A plurality of trigger electrodes needed to allow the flash lamps to discharge are so fixed to the reflector with insulating members interposed therebetween, respectively, as to be proximately opposed to the plurality of flash lamps in a one-to-one correspondence with each other. This eliminates the necessity to provide trigger wires one by one near the flash lamps during the maintenance of the apparatus, the change of lamps or the like, and it is possible to easily provide the trigger electrodes near the flash lamps only by fixing the reflector at a predetermined set position.

摘要翻译： 反射器被设置为完全覆盖彼此平行布置的多个闪光灯。 反射镜反射从闪光灯发出的闪光。 允许闪光灯放电所需的多个触发电极分别固定在反射器上，绝缘构件分别插入其间，以便彼此一一对应地与多个闪光灯相对。 这消除了在维护设备，灯等的变化期间在闪光灯附近提供触发线的必要性，并且可以仅通过将反射器固定在闪光灯附近来容易地将触发电极提供在闪光灯附近 预定的设定位置。