利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

27 条记录 (耗时 0.036 秒)

    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition
    1.
    发明申请
    Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition 审中-公开
    用于氮化硅沉积的混合通电和非能量气体

    公开(公告)号：US20120009803A1

    公开(公告)日：2012-01-12

    申请号：US13212153

    申请日：2011-08-17

    申请人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    发明人： Kee Bum Jung ,  Dale R. Du Bois ,  Lun Tsuei ,  Lihua Li Huang ,  Martin Jay Seamons ,  Soovo Sen ,  Reza Arghavani ,  Michael Chiu Kwan

    IPC分类号： H01L21/318

    CPC分类号： C23C16/45574 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/3185

    摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.

    摘要翻译： 双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。 气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体 可以形成气体。 顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区 。 等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。 等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

    ELIMINATION OF PHOTORESIST MATERIAL COLLAPSE AND POISONING IN 45-NM FEATURE SIZE USING DRY OR IMMERSION LITHOGRAPHY
    5.
    发明申请
    ELIMINATION OF PHOTORESIST MATERIAL COLLAPSE AND POISONING IN 45-NM FEATURE SIZE USING DRY OR IMMERSION LITHOGRAPHY 审中-公开
    使用干涉或倾斜光刻技术消除45-NM特征尺寸的光电材料收缩和沉淀

    公开(公告)号：US20090197086A1

    公开(公告)日：2009-08-06

    申请号：US12025615

    申请日：2008-02-04

    申请人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

    发明人： Sudha Rathi ,  Eui Kyoon Kim ,  Bok Hoen Kim ,  Martin Jay Seamons ,  Francimar Campana Schmitt

    IPC分类号： G03F7/00 ,  B05D1/36 ,  H05H1/24 ,  B32B9/00

    CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10T428/30

    摘要： A method and structure for the fabrication of semiconductor devices having feature sizes in the range of 90 nm and smaller is provided. In one embodiment of the invention, a method is provided for processing a substrate including depositing an anti-reflective coating layer on a surface of the substrate, depositing an adhesion promotion layer on the anti-reflective coating layer, and depositing a resist material on the adhesion promotion layer. In another embodiment of the invention, a semiconductor substrate structure is provided including a dielectric substrate, an amorphous carbon layer deposited on the dielectric layer, an anti-reflective coating layer deposited on the amorphous carbon layer, an adhesion promotion layer deposited on the anti-reflective coating layer, and a resist material deposited on the adhesion promotion layer.

    摘要翻译： 提供了具有尺寸在90nm以下的特征尺寸的半导体器件的制造方法和结构。 在本发明的一个实施例中，提供了一种处理衬底的方法，包括在衬底的表面上沉积抗反射涂层，在抗反射涂层上沉积粘合促进层，以及在抗反射涂层上沉积抗蚀剂材料 粘附促进层。 在本发明的另一个实施例中，提供了一种半导体衬底结构，其包括电介质衬底，沉积在电介质层上的无定形碳层，沉积在无定形碳层上的抗反射涂层， 反射涂层和沉积在粘附促进层上的抗蚀剂材料。

    Methods of dry stripping boron-carbon films
    7.
    发明授权
    Methods of dry stripping boron-carbon films 有权
    干法汽提硼碳膜的方法

    公开(公告)号：US09299581B2

    公开(公告)日：2016-03-29

    申请号：US13456404

    申请日：2012-04-26

    申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

    发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

    IPC分类号： B08B5/00 ,  H01L21/311 ,  H01L21/02

    CPC分类号： H01L21/31122 ,  H01L21/0206 ,  H01L21/31144

    摘要： Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

    摘要翻译： 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO
    8.
    发明申请
    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效

    公开(公告)号：US20110291243A1

    公开(公告)日：2011-12-01

    申请号：US12790203

    申请日：2010-05-28

    申请人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    发明人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    IPC分类号： H01L21/302 ,  H01L23/52 ,  G03F7/20 ,  H01L21/30

    CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
    9.
    发明申请
    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
    超高选择性的硬掩膜

    公开(公告)号：US20110287633A1

    公开(公告)日：2011-11-24

    申请号：US12784341

    申请日：2010-05-20

    申请人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    发明人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    IPC分类号： H01L21/3105 ,  H01L21/312

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144

    摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.

    摘要翻译： 在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中， 其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形 无定形碳层。