公开(公告)号：US20090272402A1

公开(公告)日：2009-11-05

申请号：US12114681

申请日：2008-05-02

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： B08B6/00

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US08852384B2

公开(公告)日：2014-10-07

申请号：US13584646

申请日：2012-08-13

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： H01L21/3065 ,  H01L21/67 ,  G01N21/68

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US20120305189A1

公开(公告)日：2012-12-06

申请号：US13584646

申请日：2012-08-13

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US08257503B2

公开(公告)日：2012-09-04

申请号：US12114681

申请日：2008-05-02

申请人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

发明人： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C25F3/30

CPC分类号： H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US08308896B2

公开(公告)日：2012-11-13

申请号：US13053037

申请日：2011-03-21

申请人： Yunsang Kim ,  Andrew D. Bailey, III

发明人： Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  B44C1/22 ,  C03C25/68 ,  C03C15/00

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

摘要： A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.

摘要翻译： 提供了一种在蚀刻处理室中清洁衬底的斜边缘的方法。 该方法包括将衬底放置在处理室中的衬底支撑件上。 该方法还包括使清洁气体流过设置在与衬底支撑件相距一定距离处的气体分配板的中心附近的气体进料。 该方法还包括在衬底的斜边缘附近产生清洁等离子体，以通过用RF电源为底部边缘电极或顶部边缘电极供电来清洁斜面边缘，并且将不由RF电源供电的边缘电极接地 底部边缘电极围绕基板支撑件，并且顶部边缘电极围绕气体分配板。

公开(公告)号：US08268116B2

公开(公告)日：2012-09-18

申请号：US11818621

申请日：2007-06-14

申请人： Andrew D. Bailey, III ,  Yunsang Kim

发明人： Andrew D. Bailey, III ,  Yunsang Kim

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

摘要： Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.

摘要翻译： 装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。 去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。 场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。 磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。 强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。 磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。

公开(公告)号：US20090188627A1

公开(公告)日：2009-07-30

申请号：US12021177

申请日：2008-01-28

申请人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

发明人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC分类号： B44C1/22 ,  H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。

公开(公告)号：US08298433B2

公开(公告)日：2012-10-30

申请号：US12648264

申请日：2009-12-28

申请人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/3065 ,  C23C16/505

CPC分类号： H01L21/02087 ,  H01J37/32541 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412

摘要： A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

摘要翻译： 提供了一种用于从衬底除去边缘聚合物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除边缘聚合物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将RF场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US20120074099A1

公开(公告)日：2012-03-29

申请号：US13300483

申请日：2011-11-18

申请人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

发明人： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC分类号： C23F1/00

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.

摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。

公开(公告)号：US07909960B2

公开(公告)日：2011-03-22

申请号：US11440561

申请日：2006-05-24

申请人： Yunsang Kim ,  Andrew D. Bailey, III

发明人： Yunsang Kim ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

摘要翻译： 提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。