摘要:
A novel silver halide color photographic material is provided comprising on a support at least one blue-sensitive layer, one green-sensitive layer and one red-sensitive layer, wherein said blue-sensitive layer comprises at least one yellow dye-forming coupler represented by the following general formula (1) and/or (2) and said green-sensitive layer comprises at least one magenta dye-forming coupler represented by the following general formula (M): ##STR1## wherein X.sub.1 and X.sub.2 each represents an alkyl group, an aryl group or a heterocyclic group; X.sub.3 represents an organic residue which forms a nitrogen-containing heterocyclic group together with >N--; Y represents an aryl group or a heterocyclic group; and Z represents a group which separates from the remainder of the molecule when the coupler undergoes a reaction with an oxidation product of a developing agent; ##STR2## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a substituent; and X represents a hydrogen atom or a group which separates from the remainder of the molecule when the coupler undergoes a reaction with an oxidation product of a developing agent.
摘要:
A semiconductor chip D1 of a flash memory which is stacked together with other semiconductor chips D2˜DN to form a multi-chip package (MCP), including a memory cell array 20 of the flash memory for storing an ID code and an upper address, wherein the ID code is written into the a fuse data region 20F of the memory cell array 20 before the assembly process. According to the invention, ID codes and upper addresses can be assigned and written to each of the semiconductor chips of a multi-chip package easily without increasing the size of the semiconductor chips in comparison with the prior art.
摘要:
A legged robot that ensures a large step length while keeping the height of the trunk low is realized. The legged robot is provided with a trunk, a pair of legs, and a pair of sliding joints. Each of the sliding joints links one end of each of the legs to the trunk so as to slide in a front and rear direction with respect to the trunk. For each step, one leg is caused to slide forward, and the other leg is caused to slide backward. It is possible to ensure a predetermined distance between the end portion of the one leg and the end portion of the other leg. The legged robot can make the step length large by an amount that is equivalent to this distance irrespective of the length of the legs.
摘要:
An elastic metal strip 10 aligning the longitudinal direction with the rolling direction of a cold-rolled plate is collected and processed to a shape comprising a correction plate 16 with the longitudinal direction of the elastic metal 10 as the width direction of nail and a plurality of tongue strips 11 protruded from the edge of the correction plate 16 near the nail tip. The tongue strip 11 is folded and bent to form a hooked claw 17 with a double structure of a folding part 18 and a bending part 19. A nail tip 21 of a deformed nail 20 is inserted between the hooked claw 17 and the correction plate 16 to apply a restoring force of elasticity in the correction plate to the deformed nail 20 as correction ability for deformed nails. A wrought wire rod can be used instead of a cold-rolled plate and a Cu—Al—Mn type shape-memory alloy may further be used as a raw material.
摘要:
The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (16) connected to a core cell (12) provided in a nonvolatile memory cell array (10), a second current-voltage conversion circuit (26) connected to a reference cell (22) through a reference cell data line (24), a sense amplifier (18) sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit (28) comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit (30) charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
摘要:
A vertical multitubular heat exchanger that can prevent clogging of a polymerized material and is continuously operable for an extended period of time is provided. The vertical multitubular heat exchanger (1) of the present invention introduces a process fluid containing an easily-polymerizable substance into heat exchanger tubes (28) to perform heat exchange. The vertical multitubular heat exchanger (1) includes a shell (2) extending in a vertical direction, an upper tube sheet (8) and a lower tube sheet (10) respectively disposed at the upper portion (4) and the lower portion (6) of the shell (2), and a plurality of heat exchanger tubes (28) whose outer circumferences (26) of both ends are respectively fixed to the upper tube sheet (8) and the lower tube sheet (10). An upper surface (34) of the upper tube sheet (8) is formed to be sloped and at least one of the heat exchanger tubes (28) is disposed in the vicinity of the lowest position of the upper surface (34) of the upper tube sheet (8).
摘要:
The present invention provides a semiconductor device and a method for controlling a semiconductor device having a memory cell array having a plurality of nonvolatile memory cells, the method including detecting the number of bits to be written as division data that is divided from data to be programmed into the memory cell array, comparing the number of bits with a predetermined number of bits, inverting or not inverting the division data to produce inversion data in accordance with a result of comparing the number of bits with the predetermined number of bits, and programming the inversion data into the memory cell array. The method further includes detecting the number of bits to be written as next division data and comparing the number of bits of next division data with the predetermined number of bits, while concurrently programming the inversion data into the memory cell array.
摘要:
The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (16) connected to a core cell (12) provided in a nonvolatile memory cell array (10), a second current-voltage conversion circuit (26) connected to a reference cell (22) through a reference cell data line (24), a sense amplifier (18) sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit (28) comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit (30) charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
摘要:
The present invention provides a method for producing methacrylic acid through gas-phase catalytic oxidation of methacrolein or a methacrolein-containing gas with molecular oxygen or a gas containing molecular oxygen by the use of a fixed-bed multitubular reactor comprising a plurality of reaction tubes each having a catalyst layer therein, wherein the above catalyst layer is divided in the direction of the tube axis of a reaction tube into two or more layers, to thereby provide a plurality of reaction zones, and the catalyst is caused to be present in the catalyst layer in such a way that a reaction load ratio CRc(i) per unit mass of the catalyst in each reaction zone becomes 0.8 to 1.0.
摘要:
A condensed purine derivative represented by Formula (I): wherein X—Y-Z represents R1N—C═O or N═C—W, R2 represents a hydrogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted alicyclic heterocyclic group or the like, n represents an integer of from 0 to 3, V1 represents a hydrogen atom, a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted aromatic heterocyclic group, V2 represents a substituted lower alkyl group or a substituted or unsubstituted aromatic heterocyclic group, and when V1 represents a hydrogen atom, a lower alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aryl group, and for example, X—Y-Z represents R1aN—C═O and R2 represents a substituted lower alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted alicyclic heterocyclic group, a halogen atom, a lower alkylthio group, —NR7R8, —CO2H, a lower alkoxycarbonyl group, —COHal, —CONR9R10 or —CHO, V2 may represent a lower alkyl group, a substituted or unsubstituted aralkyl group, or a substituted or unsubstituted aryl group; or a pharmacologically acceptable salt thereof.