摘要:
An electrophotographic plate having a protective layer comprising a fluorine-containing copolymer having monomer units of a fluoroolefin, and an alkyl vinyl ether and/or cycloalkyl vinyl ether on an organic photoconductive layer formed on the electroconductive layer is excellent in electrophotographic properties and durability.
摘要:
In an electrophotographic plate, that having an undercoating layer with smooth surface when observed by using a scanning electron microscope and an electric conductivity of at least 2.times.10.sup.-14 .OMEGA..sup.-1 .multidot.cm.sup.-1 between an electroconductive substrate and a photosensitive layer is improved in electrophotographic properties which are hardly changed by changes of circumstances.
摘要:
An electrophotographic member which can give printed images of high quality and is markedly high in photoresponsiveness can be provided without using halogen solvents by using a composition for charge transport layer which contains a polycarbonate resin having a recurring structural unit represented by the following formula (I) and, if necessary, a specific styryl compound, a specific hydrazone compound and the like: ##STR1## wherein R.sub.1 and R.sub.2 =alkyl, etc.R.sub.3 through R.sub.18 =H, alkyl, etc.k/m=1/1-10/1.
摘要:
A novel enamine derivative is effective as a charge transport material and can provide an electrophotographic plate excellent in sensitivity, photoresponse and durability.
摘要:
A photosensitive element for electrophotography has an electrically conductive substrate and a layer structure thereon comprising a charge generating substance and a charge transport substance. An improved charge transport substance is a derivative of triphenylamine in which at least 80% of the electrons in the highest occupied molecular orbital are located on the triphenylamine skeleton. Examples of such compounds have the following formula: ##STR1## wherein X is a an optionally substituted heterocyclic radical containing at least one ring nitrogen, Q is a single bond or --C.dbd.C--, and Z.sub.1, Z.sub.2 and Z.sub.3 are H, lower alkyl or alkoxy, aryl, NO.sub.2, CF.sub.3, --N(R').sub.2, --S--C.sub.6 H.sub.5 or --S(R').sub.2.
摘要:
A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.
摘要:
A variety of compositions that are particularly applicable for removing one or more of resist, etching residue, planarization residue, and copper oxide from a substrate comprising copper and a low-k dielectric material are described. The resist, residues, and copper oxide are removed by contacting the substrate surface with the composition, typically for a period of 30 seconds to 30 minutes, and at a temperature between 25° and 45° C. The composition includes a fluoride-providing component; at least 1% by weight of a water miscible organic solvent; an organic acid; and at least 81% by weight water. Typically the composition further includes up to about 0.4% of one or more chelators.