公开(公告)号：US20100055877A1

公开(公告)日：2010-03-04

申请号：US12542270

申请日：2009-08-17

申请人： Keiichi Kajiyama ,  Azumi Kondo

发明人： Keiichi Kajiyama ,  Azumi Kondo

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： Disclosed herein is a wafer processing method for dividing a wafer along a plurality of streets. The wafer processing method includes a back grinding step of grinding the back side of the wafer in an area corresponding to a device area to thereby reduce the thickness of the device area to a predetermined finished thickness and to simultaneously form an annular reinforcing portion on the back side of the wafer in an area corresponding to a peripheral marginal area, a wafer supporting step of attaching the back side of the wafer to a dicing tape, a kerf forming step of cutting the front side of the wafer along each street to thereby form a kerf having a depth corresponding to the thickness of the device area along each street, thereby dividing the device area into individual devices, and a peripheral marginal area removing step of peeling off the peripheral marginal area from the dicing tape.

摘要翻译： 本文公开了一种用于沿着多个街道分割晶片的晶片处理方法。 晶片处理方法包括：在与设备区域相对应的区域中研磨晶片的背面的背面磨削步骤，从而将装置区域的厚度减小到预定的最终厚度，并且同时在背面形成环形增强部分 在与边缘区域相对应的区域中的晶片的侧面，将晶片的背面附着到切割带的晶片支撑步骤，切割步骤，沿着每条街道切割晶片的前侧，从而形成 切口具有对应于沿着每条街道的装置区域的厚度的深度，从而将装置区域分成单独的装置，以及从切割带剥离周边边缘区域的周边边缘区域去除步骤。

公开(公告)号：US07858496B2

公开(公告)日：2010-12-28

申请号：US12542270

申请日：2009-08-17

申请人： Keiichi Kajiyama ,  Azumi Kondo

发明人： Keiichi Kajiyama ,  Azumi Kondo

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336

摘要： Disclosed herein is a wafer processing method for dividing a wafer along a plurality of streets. The wafer processing method includes a back grinding step of grinding the back side of the wafer in an area corresponding to a device area to thereby reduce the thickness of the device area to a predetermined finished thickness and to simultaneously form an annular reinforcing portion on the back side of the wafer in an area corresponding to a peripheral marginal area, a wafer supporting step of attaching the back side of the wafer to a dicing tape, a kerf forming step of cutting the front side of the wafer along each street to thereby form a kerf having a depth corresponding to the thickness of the device area along each street, thereby dividing the device area into individual devices, and a peripheral marginal area removing step of peeling off the peripheral marginal area from the dicing tape.

摘要翻译： 本文公开了一种用于沿着多个街道分割晶片的晶片处理方法。 晶片处理方法包括：在与设备区域相对应的区域中研磨晶片的背面的背面磨削步骤，从而将装置区域的厚度减小到预定的最终厚度，并且同时在背面形成环形增强部分 在与边缘区域相对应的区域中的晶片的侧面，将晶片的背面附着到切割带的晶片支撑步骤，切割步骤，沿着每条街道切割晶片的前侧，从而形成 切口具有对应于沿着每条街道的装置区域的厚度的深度，从而将装置区域分成单独的装置，以及从切割带剥离周边边缘区域的周边边缘区域去除步骤。

公开(公告)号：US20110097875A1

公开(公告)日：2011-04-28

申请号：US12909078

申请日：2010-10-21

申请人： Yohei Gokita ,  Takashi Yamaguchi ,  Masashi Koyama ,  Masashi Aoki ,  Masaaki Suzuki ,  Katsuhiko Sekiya ,  Ye Chen ,  Keiichi Kajiyama ,  Toshiharu Daii

发明人： Yohei Gokita ,  Takashi Yamaguchi ,  Masashi Koyama ,  Masashi Aoki ,  Masaaki Suzuki ,  Katsuhiko Sekiya ,  Ye Chen ,  Keiichi Kajiyama ,  Toshiharu Daii

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A wafer processing method for dividing a wafer into individual devices along a plurality of crossing streets formed on the front side of the wafer, the individual devices being respectively formed in a plurality of regions partitioned by the streets. The wafer processing method includes the steps of attaching the front side of the wafer to a dicing tape supported to an annular dicing frame, grinding the back side of the wafer to reduce the thickness of the wafer to a predetermined thickness, forming a break start point along each street from the back side of the wafer, applying an external force to the wafer to break the wafer along each street where the break start point is formed, thereby dividing the wafer into the individual devices, attaching the back side of the wafer to a front side of an adhesive tape supported to an annular frame and next removing the adhesive tape from the front side of the adhesive tape, and peeling off and picking up each device from the adhesive tape.

摘要翻译： 一种晶片处理方法，用于沿着形成在晶片的前侧上的多个交叉街道将晶片分割为各个装置，各个装置分别形成在由街道分隔开的多个区域中。 晶片处理方法包括以下步骤：将晶片的前侧附接到支撑在环形切割框架上的切割带，研磨晶片的背面以将晶片厚度减小到预定厚度，形成断点起点 沿着从晶片的背面的每个街道，向晶片施加外力，以沿着形成断裂起点的每个街道破碎晶片，从而将晶片分成各个装置，将晶片的背面附着到 将胶带的前侧支撑在环形框架上，然后从胶带的前侧去除胶带，并从胶带上剥离和拾取每个装置。

公开(公告)号：US07677955B2

公开(公告)日：2010-03-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B49/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨构件通过用玻璃化粘合剂固定具有小于或等于1μm的晶粒尺寸的金刚石磨粒来制造。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮沿着卡盘台转动而旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US20090098808A1

公开(公告)日：2009-04-16

申请号：US12243483

申请日：2008-10-01

申请人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

发明人： Keiichi Kajiyama ,  Takatoshi Masuda ,  Shinya Watanabe ,  Shigehiko Aoki ,  Hirotoshi Hoshikawa ,  Yoshikazu Kobayashi ,  Seiji Harada ,  Setsuo Yamamoto

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24D7/18 ,  B24B1/00 ,  B24B7/228

摘要： A grinding method for a wafer having a plurality of devices on the front side, wherein the back side of the wafer is ground by a grinding wheel to suppress the motion of heavy metal in the wafer by a gettering effect and also to maintain the die strength of each device at about 1,000 MPa or more. The grinding wheel is composed of a frame and an abrasive member fixed to the free end of the frame. The abrasive member is produced by fixing diamond abrasive grains having a grain size of less than or equal to 1 μm with a vitrified bond. A protective member is attached to the front side of the wafer and the wafer is held on a chuck table in the condition where the protective member is in contact with the chuck table. The grinding wheel is rotated as rotating the chuck table to thereby grind the back side of the wafer by means of the abrasive member so that the average surface roughness of the back side of the wafer becomes less than or equal to 0.003 μm and the thickness of a strain layer remaining on the back side of the wafer becomes 0.05 μm.

摘要翻译： 一种用于在前侧具有多个器件的晶片的研磨方法，其中晶片的背面通过砂轮研磨，以通过吸气效应抑制晶片中重金属的运动，并且还保持模具强度 的每个装置在约1000MPa或更大。 砂轮由固定在框架自由端的框架和研磨件构成。 研磨部件通过将具有小于或等于1μm的粒度的金刚石磨粒与玻璃化粘合固定而制成。 在保护构件与卡盘台接触的状态下，将保护构件安装在晶片的前侧，并将晶片保持在卡盘台上。 砂轮以旋转卡盘台的方式旋转，从而通过研磨部件磨削晶片的背面，使得晶片背面的平均表面粗糙度小于或等于0.003μm，厚度为 残留在晶片背面的应变层为0.05μm。

公开(公告)号：US20070264912A1

公开(公告)日：2007-11-15

申请号：US11797741

申请日：2007-05-07

申请人： Keiichi Kajiyama ,  Tadato Nagasawa

发明人： Keiichi Kajiyama ,  Tadato Nagasawa

IPC分类号： B24B7/30 ,  B24B1/00

CPC分类号： B24B7/228 ,  H01L21/67092

摘要： A method of processing a wafer having a device area in which a plurality of devise are formed and a peripheral excess area surrounding the device area on the front surface, comprising an annular groove forming step for forming an annular groove having a predetermined depth and a predetermined width at the boundary between the device area and the peripheral excess area in the rear surface of the wafer by positioning a cutting blade at the boundary; and a reinforcement forming step for grinding an area corresponding to the device area on the rear surface of the wafer in which the annular groove has been formed, to reduce the thickness of the device area to a predetermined thickness and allowing an area corresponding to the peripheral excess area on the rear surface of the wafer to be left behind to form an annular reinforcement.

摘要翻译： 一种处理具有其中形成有多个设备的设备区域和围绕前表面的设备区域的周边多余区域的晶片的方法，包括：环形槽形成步骤，用于形成具有预定深度和预定深度的环形槽; 通过将切割刀片定位在边界处，在晶片的后表面中的装置区域和周边多余区域之间的边界处的宽度; 以及加强成形步骤，用于研磨与已经形成有环形槽的晶片的背面上的装置区域相对应的区域，以将装置区域的厚度减小到预定厚度，并允许与周边相对应的区域 留下晶片后表面上的多余面积以形成环形增强件。

公开(公告)号：US06939785B2

公开(公告)日：2005-09-06

申请号：US10866781

申请日：2004-06-15

申请人： Keiichi Kajiyama ,  Kentaro Odanaka

发明人： Keiichi Kajiyama ,  Kentaro Odanaka

IPC分类号： H01L21/52 ,  B23K26/00 ,  B24B1/00 ,  B28D5/00 ,  H01L21/30 ,  H01L21/301 ,  H01L21/304 ,  H01L21/44 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S438/928 ,  H01L2924/3512 ,  H01L2924/00

摘要： A process for manufacturing a semiconductor chip by dividing a semiconductor wafer having a plurality of streets formed in a lattice-like form on the front surface into individual semiconductor chips, and affixing an adhesive film for die bonding to the back surfaces of the individual semiconductor chips, comprising a dividing groove forming step for forming dividing grooves having a predetermined depth from the front surface of the semiconductor wafer along the streets; a protective member affixing step for affixing a protective member to the front surface having dividing grooves formed thereon of the semiconductor wafer; a dividing groove exposing step for exposing the dividing grooves to the back surface by grinding the back surface of the semiconductor wafer to divide the semiconductor wafer into individual semiconductor chips; an adhesive film affixing step for affixing the adhesive film to the back surfaces of the individually divided semiconductor chips; and an adhesive film cutting step for applying a laser beam to the adhesive film affixed on the back surfaces of the individually divided semiconductor chips from the front surface side of the adhesive film along the dividing grooves to cut the adhesive film along the dividing grooves.

摘要翻译： 一种半导体芯片的制造方法，其特征在于，将具有在前表面上形成格子状的多个街道的半导体晶片分割成单独的半导体芯片，并将贴合粘合膜贴附于各个半导体芯片的背面 包括分隔槽形成步骤，用于从所述街道的半导体晶片的前表面形成具有预定深度的分隔槽; 用于将保护构件固定在其上形成有半导体晶片的分隔槽的前表面的保护构件固定步骤; 分隔槽暴露步骤，用于通过研磨半导体晶片的背面将分隔槽暴露于背面以将半导体晶片分成单独的半导体芯片; 用于将粘合剂膜粘附到单独分割的半导体芯片的背面的粘合膜固定步骤; 以及粘合膜切割步骤，用于沿着分隔槽将粘合膜的固定在单独分割的半导体芯片的背面上的粘合膜施加到粘合膜的前表面侧，以沿着分隔槽切割粘合剂膜。

公开(公告)号：US20120100694A1

公开(公告)日：2012-04-26

申请号：US13277874

申请日：2011-10-20

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A wafer is divided into individual devices along division lines formed on the front side of the wafer. The devices are respectively formed in a plurality of regions partitioned by the division lines. A protective member is provided on the front of the wafer, and the back of the wafer is ground to a predetermined thickness. A laser beam is applied to the wafer from the back side of the wafer along the division lines with the focal point of the laser beam set inside the wafer at a position corresponding to each division line, thereby forming a plurality of modified layers inside the wafer along the division lines. The wafer is divided along the modified layers into the individual devices, and the back side of the wafer is ground to remove the modified layers and reduce the thickness of each device to the finished thickness.

摘要翻译： 沿着形成在晶片的前侧上的分割线将晶片分成单个器件。 这些装置分别形成在由分割线分割的多个区域中。 在晶片的正面设有保护构件，将晶片的背面研磨成规定的厚度。 激光束沿着分割线从晶片的背面施加到晶片，其中激光束的焦点设置在晶片内部的对应于每个分割线的位置处，从而在晶片内部形成多个改性层 沿分界线。 将晶片沿着改性层划分成各个器件，并且研磨晶片的背面以除去改性层并将每个器件的厚度减小到成品厚度。

公开(公告)号：US07858530B2

公开(公告)日：2010-12-28

申请号：US11728936

申请日：2007-03-27

申请人： Keiichi Kajiyama ,  Takatoshi Masuda

发明人： Keiichi Kajiyama ,  Takatoshi Masuda

IPC分类号： H01L21/302 ,  C03C25/68

CPC分类号： H01L21/78 ,  H01L21/3043 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68327

摘要： A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting outwardly on a rear surface of the wafer. The processing method further includes: removing at least the projection of the peripheral reinforcing portion of the wafer; and transferring the wafer after the removing. In the removing, while the wafer is held on a holding table such that the rear surface of the wafer is exposed and the surface of the wafer closely contacts the holding table, at least the projection of the peripheral reinforcing portion is removed. After the removing of at least the projection, while the wafer is held on the holding table, a holding tape is applied to the rear surface of the wafer and the holding tape is supported by a frame. In the transferring, the wafer having the holding tape applied thereon is separated together with the frame from the holding table and is transferred together with the frame.

摘要翻译： 晶片的处理方法包括：准备具有形成在晶片表面上的具有多个器件的器件区域的晶片; 以及周边加强部，其围绕所述器件区域一体地形成并且具有在所述晶片的后表面上向外突出的突起。 该处理方法还包括：至少去除晶片的外围加强部分的突起; 并且在移除之后转移晶片。 在移除时，当晶片被保持在保持台上，使得晶片的后表面暴露并且晶片的表面紧密地接触保持台时，至少外围加强部分的突起被去除。 在移除至少突起之后，当晶片保持在保持台上时，将保持带施加到晶片的后表面，并且保持带由框架支撑。 在转印中，具有施加在其上的保持带的晶片与框架一起从保持台分离，并与框架一起传送。

公开(公告)号：US07629230B2

公开(公告)日：2009-12-08

申请号：US12219137

申请日：2008-07-16

申请人： Kazuma Sekiya ,  Keiichi Kajiyama

发明人： Kazuma Sekiya ,  Keiichi Kajiyama

IPC分类号： H01L21/00

CPC分类号： H01L21/3065 ,  H01L21/78

摘要： A wafer processing method for dividing, along streets, a wafer having a device area where devices are formed in a plurality of areas sectioned by the plurality of streets arranged in a lattice pattern on the front surface of a substrate and a peripheral extra area and comprising electrodes which are embedded in the substrate of the device area, comprising a dividing groove forming step for forming dividing grooves having a depth corresponding to the final thickness of each device along the streets; an annular groove forming step for forming an annular groove having a depth corresponding to the final thickness of each device along the boundary between the device area and the peripheral extra area; a protective member affixing step for affixing a protective member to the front surface of the wafer; a rear surface grinding step for grinding a rear surface corresponding to the device area of the substrate of the wafer to expose the dividing grooves and the annular groove to the rear surface of the substrate of the wafer and form an annular reinforcing portion in an area corresponding to the peripheral extra area; and a rear surface etching step for etching the rear surface of the substrate of the wafer to project the electrodes from the rear surface of the substrate.