公开(公告)号：US08115927B2

公开(公告)日：2012-02-14

申请号：US12622971

申请日：2009-11-20

申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： G01J4/00

CPC分类号： G01N21/211

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

公开(公告)号：US07973322B2

公开(公告)日：2011-07-05

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07863609B2

公开(公告)日：2011-01-04

申请号：US12753535

申请日：2010-04-02

申请人： Keiji Ishibashi ,  Fumitake Nakanishi

发明人： Keiji Ishibashi ,  Fumitake Nakanishi

IPC分类号： H01L21/00 ,  H01L21/31 ,  H01L29/786

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/00 ,  C30B33/12

摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.

摘要翻译： 根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物 以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。 本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻 在界面缩小。

公开(公告)号：US20100224963A1

公开(公告)日：2010-09-09

申请号：US12753535

申请日：2010-04-02

申请人： Keiji Ishibashi ,  Fumitake Nakanishi

发明人： Keiji Ishibashi ,  Fumitake Nakanishi

IPC分类号： H01L29/20 ,  H01L29/02

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  C30B33/00 ,  C30B33/12

摘要： A compound semiconductor substrate 10 according to the present invention is comprised of a Group III nitride and has a surface layer 12 containing a chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer 12 at the surface of the compound semiconductor substrate 10 contained the chloride of not less than 200×1010 atoms/cm2 and not more than 12000×1010 atoms/cm2 in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate 10 and an epitaxial layer 14 formed thereon and, as a result, the electric resistance at the interface was reduced.

摘要翻译： 根据本发明的化合物半导体衬底10由III族氮化物组成，其表面层12含有不低于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物 以及表面为O以上且3.0at％以上且15.0at％以下的氧化物。 本发明人进行了详细的研究，并且新发现，当化合物半导体基板10的表面上的表面层12含有不小于200×10 10原子/ cm 2且不大于12000×10 10原子/ cm 2的氯化物时，以Cl 并且氧化物以O计为3.0at％且不大于15.0at％时，在化合物半导体衬底10和形成在其上的外延层14之间的界面处Si还原，结果，电阻 在界面缩小。

公开(公告)号：US07771701B2

公开(公告)日：2010-08-10

申请号：US11816726

申请日：2005-07-15

申请人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

发明人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

IPC分类号： C01B3/02 ,  B01J19/02 ,  B05D7/22 ,  C23C16/22

CPC分类号： C23C16/4404 ,  H01J37/32477 ,  H01J37/32871

摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.

摘要翻译： 在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回 形成氢分子，其中形成有围绕氢原子产生源的构件的氢原子产生源的面向空间的表面的至少一部分被涂覆有SiO 2。 在将真空处理装置中由氢原子产生源产生的氢原子转移到所需位置的氢原子输送方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。

公开(公告)号：US20100068834A1

公开(公告)日：2010-03-18

申请号：US12622971

申请日：2009-11-20

申请人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

发明人： Akihiro Hachigo ,  Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： H01L21/66

CPC分类号： G01N21/211

摘要： A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

摘要翻译： 1.一种评价化合物半导体部件的损伤的方法，包括：在所述化合物半导体部件的表面上进行光谱椭圆偏光测定的工序; 以及通过使用通过光谱椭圆偏振测量获得的光学常数的光谱，使用包含对应于化合物半导体部件的带隙的波长的波长带中的光谱来评估化合物半导体部件的表面的损伤的步骤。

公开(公告)号：US20100059759A1

公开(公告)日：2010-03-11

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US20090317638A1

公开(公告)日：2009-12-24

申请号：US12297569

申请日：2008-02-13

申请人： Kazuhiro Kawabata ,  Shigeyoshi Nakayama ,  Keiji Ishibashi

发明人： Kazuhiro Kawabata ,  Shigeyoshi Nakayama ,  Keiji Ishibashi

IPC分类号： C09K13/00 ,  C01B21/00

CPC分类号： C09K3/1463 ,  Y10T428/31

摘要： The invention offers a slurry for polishing the surface of a nitride crystal. The polishing slurry contains oxide abrasive grains, at least one dispersant selected from the group consisting of an anionic organic dispersant and an inorganic dispersant, and an oxidizing reagent. The polishing slurry has a pH of less than 7. The slurry efficiently polishes the surface of the nitride crystal.

摘要翻译： 本发明提供了一种用于抛光氮化物晶体表面的浆料。 抛光浆料含有氧化物磨粒，至少一种选自阴离子有机分散剂和无机分散剂的分散剂和氧化剂。 抛光浆料的pH值小于7.浆料有效地抛光氮化物晶体的表面。

公开(公告)号：US20080014756A1

公开(公告)日：2008-01-17

申请号：US11822903

申请日：2007-07-11

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/461

CPC分类号： H01L21/02013 ,  B24B37/042 ,  H01L21/02027 ,  H01L21/6835 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

摘要翻译： 单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。 通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为 研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。

公开(公告)号：US20060292728A1

公开(公告)日：2006-12-28

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B33/06 ,  H01L21/00 ,  H01L33/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由d 1的值表示的晶体的表面层上的均匀的畸变-d 2/2 在0.3μm的X射线穿透深度处从平面间隔d 1> 1获得的平面间隔d <2>和在X射线处的平面间隔d 2 <2> 5μm的穿透深度等于或低于2.1×10 -3 -3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。