公开(公告)号：US07211152B2

公开(公告)日：2007-05-01

申请号：US10673238

申请日：2003-09-30

申请人： Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa ,  Hideki Sunayama ,  Kazutaka Yamada ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa ,  Hideki Sunayama ,  Kazutaka Yamada ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： C23C16/00 ,  F27B5/14 ,  F27D11/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/46 ,  H01L21/67109

摘要： A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

摘要翻译： 一种加热元件CVD系统，其中一个或多个连接端子保持器被放置在处理容器中，并且每个连接端子保持器保持多个连接端子。 每个连接端子将加热元件电连接到电力供应机构，使得连接到连接端子的加热元件的连接区域不暴露于处理容器中的空间。

公开(公告)号：US06593548B2

公开(公告)日：2003-07-15

申请号：US10130207

申请日：2002-05-14

申请人： Hideki Matsumura ,  Atsushi Masuda ,  Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa

发明人： Hideki Matsumura ,  Atsushi Masuda ,  Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa

IPC分类号： F27B514

CPC分类号： C23C16/45519 ,  C23C16/24 ,  C23C16/345 ,  C23C16/44 ,  C23C16/452

摘要： A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, whereby the portion of the heating element near the connection part to the power supply mechanism can be prevented from being deteriorated by the material gas, the material gas can be prevented from reacting with cleaning gas during the cleaning for removing the film adhered to the inside of the processing container, the service life of the heating element can be increased, and a film forming environment can be stabilized.

摘要翻译： 一种加热元件CVD装置，其能够提供高生产率并且分解和/或激活通过加热元件引导到处理容器中的材料气体，并且在设置在处理容器中的基板上堆叠膜，其中加热元件的连接部分区域 将用于将听力元件连接到电源机构的连接端子不暴露于处理容器内部的空间，具体地，连接部分区域被覆盖在连接部分区域上的圆柱体或板状体覆盖，同时提供空间 或者连接部分区域可以使空间部分从连接端子出现在其空间中，并且被覆盖在连接部分区域上的圆柱体或板状体覆盖，同时在空间中提供空间部分 来自加热元件，并且氢气从连接端子侧被引导到处理容器中 由于空间部分，由此可以防止靠近供电机构的连接部分附近的加热元件的部分被材料气体劣化，因此可以防止材料气体在清洁期间与清洁气体反应以除去膜 附着在加工容器的内部，能够提高加热元件的使用寿命，能够使成膜环境稳定。

公开(公告)号：US08030223B2

公开(公告)日：2011-10-04

申请号：US12656360

申请日：2010-01-27

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L21/318 ,  H01L21/471

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20100173447A1

公开(公告)日：2010-07-08

申请号：US12656360

申请日：2010-01-27

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20070062648A1

公开(公告)日：2007-03-22

申请号：US11515650

申请日：2006-09-05

申请人： Shigeru Senbonmatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Shigeru Senbonmatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： H01L21/306 ,  H05H1/24 ,  C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/44 ,  C23C16/4581 ,  H01L21/6833

摘要： A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.

摘要翻译： 也就是说，在催化化学气相沉积装置中设置具有氧化物层作为电介质层的静电卡盘的情况下，由于将硅薄膜重复地沉积在由静电卡盘保持的工件上， 静电卡盘的吸附力逐渐降低，最后卡盘根本不吸附基板。 因此，静电卡盘的表面上的电介质层被含有氮化硅或氧化硅的绝缘膜覆盖。 因此，由于可以防止对卡盘表面的损伤，所以即使重复沉积硅膜，由于通过催化化学气相沉积装置沉积硅膜而产生的氢自由基造成的损伤也不会降低 ，因此在沉积硅膜期间衬底温度稳定。

公开(公告)号：US6069094A

公开(公告)日：2000-05-30

申请号：US924304

申请日：1997-09-05

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/44 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV -1cm-2或更小，这是通过上述绝缘膜沉积工艺中的预处理所带来的。

公开(公告)号：US20070186970A1

公开(公告)日：2007-08-16

申请号：US10556063

申请日：2004-03-29

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L31/00

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20060009017A1

公开(公告)日：2006-01-12

申请号：US11155959

申请日：2005-06-17

申请人： Shigeru Sembommatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Shigeru Sembommatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36

CPC分类号： C30B29/06 ,  C30B13/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686

摘要： Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of this, in a method of crystallizing a semiconductor film according to the present invention, after a step of performing scanning with a first pulse laser, scanning with a second pulse laser, which has a higher energy density than that of the first pulse laser, is performed in a substantially orthogonal direction to a traveling direction of scanning with the first pulse laser. With this method, the semiconductor film can be crystallized uniformly.

摘要翻译： 通过用脉冲激光扫描来结晶半导体膜的常规方法的问题在于，晶粒的粒径或形状的变化引起薄膜晶体管的特性的变化，这降低了液晶显示器的显示质量。 鉴于此，在根据本发明的半导体膜的结晶方法中，在用第一脉冲激光进行扫描的步骤之后，用比第一脉冲具有更高的能量密度的第二脉冲激光进行扫描 激光在与第一脉冲激光器的扫描的行进方向大致正交的方向上进行。 通过这种方法，半导体膜可以均匀地结晶。

公开(公告)号：US20090263911A1

公开(公告)日：2009-10-22

申请号：US11991278

申请日：2006-08-22

申请人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

发明人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

IPC分类号： G01N27/00 ,  G01N33/00

CPC分类号： H01J37/32963 ,  H01J37/3244 ,  H01J37/32935 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the present invention is to provide an end point detection method in a gas phase reaction processing apparatus.An end point detection method in the case where a catalyst 9 arranged in a treatment chamber is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst 9 heated at high temperature, comprises the steps of supplying the electric power to the catalyst 9 from a constant current source 10, detecting electric potential difference between both ends of the catalyst 9, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

摘要翻译： 本发明的目的是提供一种气相反应处理装置中的终点检测方法。 在布置在处理室中的催化剂9通过向其供给电力而在高温下加热并且通过在高温下加热的催化剂9裂解反应气体来进行处理的情况下的终点检测方法包括以下步骤 从恒定电流源10向催化剂9供给电力，检测催化剂9的两端之间的电位差，进行检测出的电位差的一次微分，并根据获得的主电极确定治疗的终点 差分值。

公开(公告)号：US06349669B1

公开(公告)日：2002-02-26

申请号：US09102665

申请日：1998-06-23

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： C23C1600

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 而且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV-1cm-2或更低，这是通过上述绝缘膜沉积工艺中的预处理而得到的。