公开(公告)号：US08771552B2

公开(公告)日：2014-07-08

申请号：US12837872

申请日：2010-07-16

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi

IPC分类号： H01B1/00

CPC分类号： C30B23/025 ,  C30B29/403 ,  C30B33/00 ,  H01L29/2003

摘要： A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1 −d2 |/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9 ×10−3, and the main surface has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中在由X射线穿透深度为0.3μm的平面间距d1获得的| d1 -d2 | / d2的值表示的晶体基板的表面层处的均匀的变形，以及 在5μm的X射线穿透深度处的平面间距d2等于或小于1.9×10 -3，并且主表面具有以等于或大于等于或等于10°的角度在<10-10>方向上倾斜的平面取向 相对于晶体基板的（0001）和（000-1）面之一，比10°等于或小于80°。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US20120267606A1

公开(公告)日：2012-10-25

申请号：US13526061

申请日：2012-06-18

申请人： Keiji ISHIBASHI ,  Yusuke Yoshizumi ,  Shugo Minobe

发明人： Keiji ISHIBASHI ,  Yusuke Yoshizumi ,  Shugo Minobe

IPC分类号： H01L33/06 ,  C30B29/40 ,  H01L29/04 ,  C30B25/18 ,  H01L33/18 ,  H01L21/20 ,  C01B21/06 ,  C30B23/02

CPC分类号： C30B33/00 ,  C30B21/02 ,  C30B29/403 ,  Y10T428/21 ,  Y10T428/24355

摘要： A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10−3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，在晶体基板的表面层上的均匀的畸变等于或小于1.7×10 -3，并且其中主表面的平面取向具有等于或等于 相对于包含晶体基板的ac轴的平面，在[0001]方向上大于-10°且等于或小于10°。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US09708735B2

公开(公告)日：2017-07-18

申请号：US13526061

申请日：2012-06-18

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi ,  Shugo Minobe

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi ,  Shugo Minobe

IPC分类号： C30B29/54 ,  C30B33/00 ,  C30B29/40

CPC分类号： C30B33/00 ,  C30B21/02 ,  C30B29/403 ,  Y10T428/21 ,  Y10T428/24355

摘要： A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10−3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

公开(公告)号：US20120223417A1

公开(公告)日：2012-09-06

申请号：US13469576

申请日：2012-05-11

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi

IPC分类号： H01L29/20 ,  B32B5/16 ,  H01L21/66 ,  C01B21/06

CPC分类号： C30B33/00 ,  C09K3/1436 ,  C09K3/1463 ,  C30B29/403 ,  H01L21/02024 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/16 ,  Y10T428/2982

摘要： A group III nitride crystal substrate is provided wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.9×10−3, and wherein the main surface has a plane orientation inclined in a direction at an angle equal to or greater than 10° and equal to or smaller than 81° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，在晶体基板的表面层处的均匀的变形为1.9×10 -3以下，其中，所述主表面具有倾斜< 方向相对于晶体基板的（0001）和（000-1）面之一以等于或大于10°且等于或小于81°的角度。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US08228963B2

公开(公告)日：2012-07-24

申请号：US12715860

申请日：2010-03-02

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Hideki Osada ,  Keiji Ishibashi ,  Katsushi Akita ,  Masaki Ueno

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Hideki Osada ,  Keiji Ishibashi ,  Katsushi Akita ,  Masaki Ueno

IPC分类号： H01S5/00

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/32 ,  H01S5/20 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/34333

摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.

摘要翻译： 提供一种氮化镓系半导体光学元件，其包括显示低压电效应和高结晶质量的含铟氮化镓系半导体层。 氮化镓系半导体光学元件11a包括GaN支撑基底13，GaN基半导体区域15以及阱层19.初级表面13a从与从一个晶体的方向延伸的参考轴正交的表面倾斜 m轴的a轴和另一个晶轴的GaN的a轴。 倾角AOFF为0.05度以上至小于15度。 角度AOFF等于由矢量VM和矢量VN定义的角度。 主表面的倾角由典型的m面SM和m轴矢量VM表示。 GaN基半导体区域15设置在主表面13a上。 在有源层17的阱层19中，阱层19的m面和a面都从主面13a的法线轴AN倾斜。 阱层19的铟含量为0.1以上。

公开(公告)号：US20110012233A1

公开(公告)日：2011-01-20

申请号：US12837872

申请日：2010-07-16

申请人： Keiji ISHIBASHI ,  Yusuke Yoshizumi

发明人： Keiji ISHIBASHI ,  Yusuke Yoshizumi

IPC分类号： H01L29/20 ,  C30B19/12 ,  C30B23/02

CPC分类号： C30B23/025 ,  C30B29/403 ,  C30B33/00 ,  H01L29/2003

摘要： A group III nitride crystal substrate is provided in which, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the group III nitride crystal substrate obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1−d2|/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9×10−3, and the main surface has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，与通过从主表面的X射线穿透深度的变化进行的X射线衍射测量获得的III族氮化物晶体基板的任意特定平行晶格面的平面间隔 的晶体基板的特定平行晶格面的X射线衍射条件得到满足的结晶基板的表面层的均匀失真，由从 在X射线穿透深度为0.3μm的平面间隔d1和在5μm的X射线穿透深度处的平面间距d2等于或小于1.9×10 -3，并且主表面具有倾斜的平面取向 相对于晶体基板的（0001）和（000-1）面之一等于或大于10°且等于或小于80°的角度的<10-10>方向。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US08927962B2

公开(公告)日：2015-01-06

申请号：US13055690

申请日：2010-02-26

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L29/66 ,  H01L33/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/32

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

公开(公告)号：US08809868B2

公开(公告)日：2014-08-19

申请号：US13289813

申请日：2011-11-04

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Koji Nishizuka

IPC分类号： H01L31/0312 ,  H01L33/00 ,  H01L29/20 ,  H01L31/0304

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/325 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2302/00 ,  H01S2304/04

摘要： Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.

摘要翻译： 提供了一种III族氮化物半导体器件，其包括导电衬底，该导电衬底包括由第一氮化镓基半导体构成的主表面和包含第一p型氮化镓基半导体层的III族氮化物半导体区域， 主表面。 衬底的主表面在垂直于沿着第一氮化镓基半导体的c轴延伸的参考轴的平面的不小于50度且小于130度的范围内倾斜，氧气 第一p型氮化镓系半导体层的浓度Noxg为5×1017cm-3以下，第一p型氮化镓系半导体层的氧浓度Noxg与p型掺杂浓度Npd的比（Noxg / Npd） 型氮化镓系半导体层不大于1/10。

公开(公告)号：US08471366B2

公开(公告)日：2013-06-25

申请号：US13307396

申请日：2011-11-30

申请人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

发明人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

IPC分类号： H01L29/05

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/808 ,  H01L29/812 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2301/176

摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.

摘要翻译： 氮化物半导体器件包括主表面和指示器部分。 主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。 指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于 在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

公开(公告)号：US08420419B2

公开(公告)日：2013-04-16

申请号：US13404310

申请日：2012-02-24

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。