公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

公开(公告)号：US5281541A

公开(公告)日：1994-01-25

申请号：US755439

申请日：1991-09-05

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H01L21/306

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： A method for repairing a defective semiconductor device, the defective semiconductor device including a semiconductor thin film and a conductive thin film, disposed in the named order, on a conductive surface of a substrate, such that the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion. The method includes the steps of applying desired a voltage through an electrode positioned above a surface of the defective semiconductor device, and moving the electrode along the surface of the defective semiconductor device while maintaining a distance between the electrode and the conductive thin film sufficient to allow a discharge to occur when the electrode is above the electrically short-circuited portion, such that the discharge modifies a region of the conductive thin film which is in electrical contact with the conductive surface of the substrate, to establish an electrically noncontacted state between the conductive thin film and the conductive surface of the substrate.

摘要翻译： 一种用于修复有缺陷的半导体器件的方法，所述有缺陷的半导体器件包括半导体薄膜和导电薄膜，其以所述的顺序设置在衬底的导电表面上，使得导电薄膜和导电薄膜的导电表面 衬底在半导体薄膜中出现的针孔处电短路以形成电短路部分。 该方法包括以下步骤：通过位于缺陷半导体器件的表面上方的电极施加所需的电压，并且沿着有缺陷的半导体器件的表面移动电极，同时保持电极和导电薄膜之间的距离足以允许 当电极在电气短路部分之上时，发生放电，使得放电改变与衬底的导电表面电接触的导电薄膜的区域，以在导电之间建立电非接触状态 薄膜和基板的导电表面。

公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5362684A

公开(公告)日：1994-11-08

申请号：US840537

申请日：1992-02-25

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5510631A

公开(公告)日：1996-04-23

申请号：US289258

申请日：1994-08-11

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20 ,  H01L31/0312 ,  H01L29/76 ,  H01L31/06

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US5527396A

公开(公告)日：1996-06-18

申请号：US398071

申请日：1995-03-03

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/517 ,  C30B25/02 ,  C30B25/16 ,  G03G5/082 ,  H01L21/205 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/517 ,  G03G5/08264 ,  G03G5/08278 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78603 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

公开(公告)号：US5417770A

公开(公告)日：1995-05-23

申请号：US81222

申请日：1993-06-25

申请人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saitoh ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzou Kouda ,  Ryou Hayashi ,  Masahiko Tonogaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23C16/517 ,  C30B25/02 ,  C30B25/16 ,  G03G5/082 ,  H01L21/205 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/076 ,  C23C16/517 ,  G03G5/08264 ,  G03G5/08278 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78603 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

摘要翻译： 一种快速沉积非单晶半导体膜并形成硅型非单晶光伏器件的方法，以及连续制造光电器件的方法。 通过该方法，通过用低于完全分解原料气体所需的微波能量的微波能分解原料气体来形成沉积膜。 在能量上比微波能量高的同时施加RF能量。 微波能量在50mTorr以下的内部压力水平下作用于原料气体，形成均匀的非单晶半导体膜，具有优良的电气特性和降低的光劣化。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

公开(公告)号：US4906542A

公开(公告)日：1990-03-06

申请号：US183998

申请日：1988-04-20

申请人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

发明人： Tatsuyuki Aoike ,  Masafumi Sano ,  Takehito Yoshino ,  Toshimitsu Kariya ,  Hiroaki Niino

IPC分类号： G03G5/082

CPC分类号： G03G5/08214

摘要： A light receiving member for electrophotography made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on the aluminum support, wherein the multilayered light receiving layer consists of a lower layer in contact with the support and an upper layer, the lower layer being made of an inorganic material containing at least aluminum atom (Al), silicon atoms (Si) and hydrogen atoms (H), and having portion in which the aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, the upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X) and containing at least one of carbon atoms, nitrogen atoms (N) and oxygen atoms (O) in the layer region in adjacent with the lower layer. The light receiving member for electrophotography can overcome all of the foregoing problems and exhibits extremely excellent electrical property, optical property, photoconductivity, durability, image property and circumstantial property of use.