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    Photovoltaic element
    1.
    发明授权
    Photovoltaic element 失效
    光伏元件

    公开(公告)号：US5401330A

    公开(公告)日：1995-03-28

    申请号：US275274

    申请日：1994-07-15

    申请人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

    发明人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

    IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

    CPC分类号： H01L31/204 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

    摘要翻译： 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。 一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及 透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。 此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

    Photovoltaic device, method of producing the same and generating system using the same
    2.
    发明授权
    Photovoltaic device, method of producing the same and generating system using the same 失效
    光伏器件，其制造方法以及使用其的发电系统

    公开(公告)号：US5439533A

    公开(公告)日：1995-08-08

    申请号：US337195

    申请日：1994-11-07

    申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

    发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

    IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

    CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

    摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

    摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

    Stacked photovoltaic device
    5.
    发明授权
    Stacked photovoltaic device 有权
    堆叠式光伏器件

    公开(公告)号：US07189917B2

    公开(公告)日：2007-03-13

    申请号：US10801681

    申请日：2004-03-17

    申请人： Naoto Okada ,  Toshimitsu Kariya

    发明人： Naoto Okada ,  Toshimitsu Kariya

    IPC分类号： H01L31/00

    CPC分类号： H01L31/076 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： To provide a stacked photovoltaic device including: at least one pair of a first photovoltaic device and a second photovoltaic device stacked in order from a light incident side; and a selective reflection layer formed between the at least one pair of the first photovoltaic device and the second photovoltaic device and adapted to electrically connect therebetween, in which the selective reflection layer has a sheet resistance of 100 kΩ/□ or more and 100 MΩ/□ or less.

    摘要翻译： 提供堆叠的光伏器件，包括：至少一对第一光伏器件和从光入射侧依次层叠的第二光伏器件; 以及形成在所述至少一对所述第一光电器件和所述第二光电器件之间并且适于在其间电连接的选择反射层，其中所述选择反射层的薄层电阻为100kΩ/□以上且100MΩ/ □以下

    Photoelectric conversion element having a surface member or a protection member and building material using the same
    6.
    发明授权
    Photoelectric conversion element having a surface member or a protection member and building material using the same 失效
    具有表面构件或保护构件的光电转换元件和使用其的建筑材料

    公开(公告)号：US06153823A

    公开(公告)日：2000-11-28

    申请号：US37825

    申请日：1998-03-11

    申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

    发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

    IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

    CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

    摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

    摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

    Photovoltaic device with layer region containing germanium therin
    7.
    发明授权
    Photovoltaic device with layer region containing germanium therin 失效
    其中含有锗的层区域的光伏器件

    公开(公告)号：US5279681A

    公开(公告)日：1994-01-18

    申请号：US838101

    申请日：1992-02-20

    申请人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

    发明人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

    IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

    CPC分类号： H01L31/065 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed.An i-type semiconductor layer constituting the semiconductor body is composed of a layer having a region containing germanium and at least one region not containing germanium. The at least one region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with the rate of increase being larger at the side of the n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of the i-layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.

    摘要翻译： 公开了具有半导体本体具有pin结的光电器件，具有降低的时间依赖性劣化，高可靠性和高的光电转换效率。 构成半导体本体的i型半导体层由具有锗的区域和至少一个不含锗的区域的层构成。 至少一个不含锗的区域至少设置在p半导体层的一侧。 含有非晶硅和锗的区域中锗的最大组成比在20至70at的范围内。 ％，并且上述含有非晶硅和锗的区域中的锗的组成比在n半导体层侧为零，并且朝向p半导体层的侧面增加，其增加率在 n半导体层的侧面比p半导体层侧，锗层在i层厚度的中央的组成比至少等于75at。 锗的最大组成比的％。

    METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS
    8.
    发明申请
    METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS 有权
    制造有机电致发光显示装置的方法

    公开(公告)号：US20090117807A1

    公开(公告)日：2009-05-07

    申请号：US12175079

    申请日：2008-07-17

    申请人： Yoshinori Uno ,  Naoto Okada

    发明人： Yoshinori Uno ,  Naoto Okada

    IPC分类号： H01L51/56

    CPC分类号： H01L27/3269 ,  G09G3/14 ,  G09G3/3216 ,  G09G3/3225 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2320/0693 ,  G09G2360/145 ,  H01L2251/562

    摘要： Provided is a method of manufacturing an organic electroluminescence display apparatus including an organic electroluminescence device formed on a substrate, the organic electroluminescence device including a first electrode and a second electrode, at least one of which is transparent, and an organic emission layer formed between the first electrode and the second electrode, the organic emission layer being for emitting light by application of a current. Aging is performed until a rate of change in current efficiency of the organic electroluminescence device per unit time at a predetermined luminance or the amount of change per unit time in the rate of change in current efficiency of the organic electroluminescence device per unit time falls within a predetermined range.

    摘要翻译： 提供一种制造有机电致发光显示装置的方法，所述有机电致发光显示装置包括形成在基板上的有机电致发光器件，所述有机电致发光器件包括第一电极和第二电极，所述第一电极和第二电极中的至少一个是透明的， 第一电极和第二电极，有机发射层用于通过施加电流来发光。 进行老化，直到每单位时间内的有机电致发光元件的电流效率以规定的亮度或单位时间的变化量为单位时间内的有机电致发光元件的电流效率的变化率落在 预定范围。

    Semiconductor device and method of manufacturing same
    9.
    发明授权
    Semiconductor device and method of manufacturing same 失效
    半导体装置及其制造方法

    公开(公告)号：US06911352B2

    公开(公告)日：2005-06-28

    申请号：US10626656

    申请日：2003-07-25

    申请人： Takeshi Takada ,  Naoto Okada

    发明人： Takeshi Takada ,  Naoto Okada

    IPC分类号： H01L31/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L27/14 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

    摘要： A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a method of manufacturing a semiconductor device including the steps of forming a first semiconductor layer on a substrate, forming a first transparent electroconductive layer on the first semiconductor layer, and forming a second semiconductor layer on the first transparent electroconductive layer, the method further including executing passivation treatment on defects in the first semiconductor layer before the formation of the second semiconductor layer.

    摘要翻译： 通过利用半导体器件的制造方法，能够以高产率制造能够抑制流过第一半导体层的缺陷区域的短路电流的半导体器件，其包括以下步骤：在第一半导体层上形成第一半导体层 在所述第一半导体层上形成第一透明导电层，以及在所述第一透明导电层上形成第二半导体层，所述方法还包括在形成所述第二半导体层之前对所述第一半导体层中的缺陷执行钝化处理。