公开(公告)号：US5401330A

公开(公告)日：1995-03-28

申请号：US275274

申请日：1994-07-15

申请人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

发明人： Keishi Saito ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Naoto Okada ,  Yutaka Nishio ,  Tomonori Nishimoto ,  Takaharu Kondo

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/076 ,  H01L31/18 ,  H01L31/20 ,  H01L31/075

CPC分类号： H01L31/204 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.

摘要翻译： 本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。 一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及 透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。 此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

公开(公告)号：US06472248B2

公开(公告)日：2002-10-29

申请号：US09758345

申请日：2001-01-12

申请人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

发明人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/03685 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02675 ,  H01L31/028 ,  H01L31/03926 ,  H01L31/048 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

公开(公告)号：US07282132B2

公开(公告)日：2007-10-16

申请号：US10805323

申请日：2004-03-22

申请人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

发明人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

IPC分类号： C25D5/50

CPC分类号： H01L31/1884 ,  C25D9/04 ,  H01L31/056 ,  H01L31/1864 ,  Y02E10/52 ,  Y02P70/521

摘要： A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film that is low in electric resistance without impairing the light transmittance of the zinc oxide film.

摘要翻译： 在含有氧的氮气或惰性气体气氛中，将从水溶液电化学沉积的氧化锌薄膜在等于或高于150℃等于或低于400℃的温度下进行热处理，由此 获得电阻低而不损害氧化锌膜的透光率的氧化锌膜。

公开(公告)号：US20050150773A1

公开(公告)日：2005-07-14

申请号：US10999926

申请日：2004-12-01

申请人： Satoru Yamada ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Masumitsu Iwata ,  Yusuke Miyamoto ,  Takaharu Kondo

发明人： Satoru Yamada ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Masumitsu Iwata ,  Yusuke Miyamoto ,  Takaharu Kondo

IPC分类号： C25D9/08 ,  C23C28/00 ,  C23C28/04 ,  C25D5/34 ,  C25D5/48 ,  H01L21/288 ,  H01L31/04

CPC分类号： C25D5/48 ,  C23C28/00 ,  C25D5/34

摘要： A method for forming a deposition film from an aqueous solution by electrochemical reaction includes the steps of: forming the targeted deposition film under primary deposition conditions; replacing at least part of members in contact with the solution or removing deposit on surfaces of the members; and depositing a film under secondary deposition conditions. These steps are performed in that order. Then, the deposition film is formed again under the primary deposition conditions. In the method, the resulting deposition film exhibits desired characteristics even after maintenance of the deposition apparatus.

摘要翻译： 通过电化学反应从水溶液形成沉积膜的方法包括以下步骤：在初始沉积条件下形成目标沉积膜; 替换至少部分与溶液接触的构件或去除构件表面上的沉积物; 并在二次沉积条件下沉积薄膜。 这些步骤按照顺序执行。 然后，在初始沉积条件下再次形成沉积膜。 在该方法中，即使在保存沉积设备之后，所得到的沉积膜也显示出期望的特性。

公开(公告)号：US20050189012A1

公开(公告)日：2005-09-01

申请号：US10693914

申请日：2003-10-28

申请人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

发明人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

IPC分类号： C23C14/08 ,  C23C28/04 ,  C25D9/04 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/0392 ,  C23C14/086 ,  C23C28/044 ,  C23C28/30 ,  C23C28/323 ,  C23C28/324 ,  C23C28/345 ,  C25D9/04 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/18 ,  Y02E10/50

摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.

摘要翻译： 在具有多个纹理构成的氧化锌膜中，每个纹理组成由具有结构的山丘构成，其中第一表面沿着一个曲线边界在第二表面上，其中纹理成分的第一表面纹理成分的山丘具有平均倾角 尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角，占至少一半以上 多个纹理成分。 这使得能够改善用作光电器件中的光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06803080B2

公开(公告)日：2004-10-12

申请号：US10231308

申请日：2002-08-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06706336B2

公开(公告)日：2004-03-16

申请号：US10055974

申请日：2002-01-28

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C1624

CPC分类号： H01J37/32467 ,  C23C16/24 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

摘要翻译： 通过将含有卤化硅和氢气的源气体引入真空容器的内部可以获得优异的光电特性的硅基膜，至少一部分内部被含硅固体覆盖，在 真空容器内部的空间，并且在设置在真空容器内部的基板上形成硅基膜。

公开(公告)号：US06706335B2

公开(公告)日：2004-03-16

申请号：US09865549

申请日：2001-05-29

申请人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/509 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

摘要翻译： 在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm 2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。 因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

公开(公告)号：US06897559B2

公开(公告)日：2005-05-24

申请号：US10455300

申请日：2003-06-06

申请人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Akira Sakai ,  Koichi Matsuda

IPC分类号： C23C16/509 ,  H01L21/205 ,  H01L31/04 ,  H01L31/20 ,  H01L23/34

CPC分类号： H01L31/206 ,  C23C16/509 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521 ,  H01L2924/00

摘要： There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.

摘要翻译： 提供了一种使用多个沉积膜形成容器在基板上形成多个硅基薄膜的装置，该沉积膜形成容器可以通过施加第一频率的高频功率而形成更高质量和优异的均匀性的硅基薄膜 从在30MHz和500MHz之间的范围内选择到沉积成膜容器中的功率施加电极，其中供电电极和衬底之间的距离为10mm±5mm，并且通过提供高频功率的 从10MHz到30MHz范围内的第二频率到沉积成膜容器中的供电电极，其中供电电极和基板之间的距离为20mm±5mm。