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公开(公告)号：US20120318338A1
公开(公告)日：2012-12-20
申请号：US13599577
申请日：2012-08-30
IPC分类号： H01L31/0236 , H01L31/076 , H01L31/075
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/035227 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
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公开(公告)号：US20120060905A1
公开(公告)日：2012-03-15
申请号：US12879209
申请日：2010-09-10
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/1804 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
摘要翻译： 光电器件和方法包括在衬底层上沉积金属膜。 金属膜退火以在基底层上形成金属膜岛。 使用岛作为蚀刻掩模蚀刻衬底层，以在衬底层中形成柱。
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公开(公告)号：US09231133B2
公开(公告)日：2016-01-05
申请号：US12879209
申请日：2010-09-10
IPC分类号： H01L21/00 , H01L31/0236
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/1804 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
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4.发明授权Uniformly distributed self-assembled solder dot formation for high efficiency solar cells 有权用于高效率太阳能电池的均匀分布的自组装焊点形成公开(公告)号：US08841544B2
公开(公告)日：2014-09-23
申请号：US13611047
申请日：2012-09-12
IPC分类号： H01L31/00
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A substrate for photovoltaic device includes a textured surface formed from silicon-based material. The textured surface includes a plurality of cones uniformly distributed across the textured surface. The uniformly distributed cones are configured by etching from a top surface of the substrate using a self-assembled solder dot mask evaporated on the substrate prior to etching. The cones are uniformly distributed as a result of gettering a process chamber prior to forming the solder dot mask. The cones have a height/width ratio between about 1 to about 4, and the cones have a density between 108 to 109 cones/cm2.
摘要翻译： 用于光伏器件的衬底包括由硅基材料形成的纹理表面。 纹理表面包括均匀分布在纹理化表面上的多个锥体。 均匀分布的锥体通过在蚀刻之前使用在衬底上蒸发的自组装焊点掩模从衬底的顶表面进行蚀刻而配置。 由于在形成焊点掩模之前吸收处理室，锥体均匀分布。 锥体具有约1至约4之间的高度/宽度比，并且锥体具有在108至109锥/ cm 2之间的密度。
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公开(公告)号：US20130049150A1
公开(公告)日：2013-02-28
申请号：US13606916
申请日：2012-09-07
IPC分类号： B32B3/30 , H01L31/0352
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
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6.发明申请UNIFORMLY DISTRIBUTED SELF-ASSEMBLED SOLDER DOT FORMATION FOR HIGH EFFICIENCY SOLAR CELLS 有权高效率太阳能电池的均匀分布式自组装焊料成型公开(公告)号：US20140065752A1
公开(公告)日：2014-03-06
申请号：US13597980
申请日：2012-08-29
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在处理室中进行吸气处理，其限制在衬底上形成吸气材料层并在衬底上形成焊料层。 将焊料层退火以形成在衬底上生长的均匀分布的焊点。 使用焊点蚀刻衬底以保护衬底的部分并在衬底中形成锥体，使得锥体为光伏器件提供三维辐射吸收结构。
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7.发明授权Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells 有权为高效率太阳能电池制造均匀分布的自组装焊点形成方法公开(公告)号：US08889456B2
公开(公告)日：2014-11-18
申请号：US13597980
申请日：2012-08-29
CPC分类号： H01L31/02366 , C03C15/00 , C03C2218/34 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes performing a gettering process in a processing chamber which restricts formation of a layer of gettering materials on a substrate and forming a solder layer on the substrate. The solder layer is annealed to form uniformly distributed solder dots which grow on the substrate. The substrate is etched using the solder dots to protect portions of the substrate and form cones in the substrate such that the cones provide a three-dimensional radiation absorbing structure for the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在处理室中进行吸气处理，其限制在衬底上形成吸气材料层并在衬底上形成焊料层。 将焊料层退火以形成在衬底上生长的均匀分布的焊点。 使用焊点蚀刻衬底以保护衬底的部分并在衬底中形成锥体，使得锥体为光伏器件提供三维辐射吸收结构。
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公开(公告)号：US08685858B2
公开(公告)日：2014-04-01
申请号：US13220816
申请日：2011-08-30
IPC分类号： H01L21/311
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
摘要翻译： 半球和球形成并用于多种应用。 半球用于形成具有上表面和下表面的基底。 上表面包括具有附接到下表面的基部的柱的峰。 峰在上表面具有通过半球形金属结构的阵列定义的密度，其在蚀刻期间用作掩模，以在形成支柱期间将基底材料移除到下表面。 支柱是致密和均匀的，并且包括微米级的平均直径。 球形成为独立的金属球体或纳米颗粒用于其他应用。
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公开(公告)号：US09808874B2
公开(公告)日：2017-11-07
申请号：US13613000
申请日：2012-09-13
IPC分类号： B23K1/00 , B23K35/36 , B23K35/362
CPC分类号： B23K1/0016 , B23K35/3601 , B23K35/362
摘要： The present invention is directed to a soldering method for joining objects is also provided, comprising the steps of applying a flux composition to at least a portion of one or more of the objects, and joining the objects.
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公开(公告)号：US09343423B2
公开(公告)日：2016-05-17
申请号：US14526268
申请日：2014-10-28
IPC分类号： H01L21/50 , H01L21/48 , H01L23/00 , H01L23/498 , H01L21/463 , H01L23/544
CPC分类号： H01L24/81 , H01L21/463 , H01L21/563 , H01L23/49816 , H01L23/544 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/743 , H01L24/83 , H01L24/92 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/11462 , H01L2224/13082 , H01L2224/13147 , H01L2224/1605 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/2741 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/8113 , H01L2224/81132 , H01L2224/81192 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/81801 , H01L2224/81815 , H01L2224/83192 , H01L2224/83856 , H01L2224/9211 , H01L2224/94 , H01L2924/01029 , H01L2924/10253 , H01L2924/1461 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/014 , H01L2224/11 , H01L2224/27 , H01L2224/81 , H01L2224/83
摘要： A preassembly semiconductor device comprises chip soldering structures on a semiconductor chip and substrate soldering structures on a substrate corresponding to the chip soldering structures. The substrate soldering structures extend toward the chip soldering structures for forming solder connections with the chip soldering structures. The chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the chip and the substrate to one another.
摘要翻译： 预组装半导体器件包括半导体芯片上的芯片焊接结构和对应于芯片焊接结构的衬底上的衬底焊接结构。 衬底焊接结构朝着芯片焊接结构延伸，以形成与芯片焊接结构的焊接连接。 芯片和衬底相对于彼此处于预组装位置。 基板焊接结构的高度大于芯片焊接结构的高度。 预先施加的底部填充物与基底相邻并且足够厚以便基本上不超过基底焊接结构的全高度延伸。 在另一个实施例中，芯片焊接结构的高度大于衬底焊接结构的高度，并且预先施加的底部填充物与半导体芯片邻接并且足够厚以便基本上不超过芯片焊接的全部高度 结构。 一种方法包括通过将芯片和衬底彼此焊接来从这些器件制造半导体组件。
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