公开(公告)号：US20060275971A1

公开(公告)日：2006-12-07

申请号：US11406122

申请日：2006-04-18

申请人： Keith Fogel ,  Kam-Leung Lee ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith Fogel ,  Kam-Leung Lee ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/26

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

公开(公告)号：US20080108204A1

公开(公告)日：2008-05-08

申请号：US11871694

申请日：2007-10-12

申请人： Keith Fogel ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith Fogel ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/76

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 本发明的工艺流程解决了现有技术ATR方法未公开的两个主要困难：在由沟槽界定的非晶化Si区域的边缘产生“角部缺陷”，以及在高温后再结晶缺陷 - 未被沟槽限定的非ATR区域的去除退火。 特别地，本发明提供了一种工艺流程，其包括以下步骤：（i）在没有沟槽的衬底区域中进行非晶化和低温重结晶，（ii）形成在ATR'边缘处的缺陷区域的沟槽隔离区域的形成， d区域，以及（iii）在沟槽隔离区域中进行的高温缺陷去除退火。

公开(公告)号：US20060276011A1

公开(公告)日：2006-12-07

申请号：US11142646

申请日：2005-06-01

申请人： Keith Fogel ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith Fogel ,  Katherine Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/36

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 本发明的工艺流程解决了现有技术ATR方法未公开的两个主要困难：在由沟槽限定的非晶化Si区域的边缘产生“角部缺陷”，以及在高温后再结晶缺陷 - 非ATR区域的去除退火不受沟槽限制。 特别地，本发明提供了一种工艺流程，其包括以下步骤：（i）在没有沟槽的衬底区域中进行非晶化和低温重结晶，（ii）形成在ATR'边缘处的缺陷区域的沟槽隔离区域的形成， d区域，以及（iii）在沟槽隔离区域中进行的高温缺陷去除退火。

公开(公告)号：US07691733B2

公开(公告)日：2010-04-06

申请号：US12062749

申请日：2008-04-04

申请人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 特别地，本发明提供熔融重结晶ATR方法，其单独使用或与非熔融再结晶ATR方法组合使用，其中通过介电填充沟槽界定的选定的Si区域被诱导通过以下步骤进行取向改变： 熔融前体变形，激光熔化和无角点缺陷的模板重结晶。

公开(公告)号：US20080286917A1

公开(公告)日：2008-11-20

申请号：US12062749

申请日：2008-04-04

申请人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/265 ,  H01L21/8238

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 特别地，本发明提供熔融重结晶ATR方法，其单独使用或与非熔融再结晶ATR方法组合使用，其中通过介电填充沟槽界定的选定的Si区域被诱导通过以下步骤进行取向改变： 熔融前体变形，激光熔化和无角点缺陷的模板重结晶。

公开(公告)号：US07547616B2

公开(公告)日：2009-06-16

申请号：US11406122

申请日：2006-04-18

申请人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith E. Fogel ,  Kam-Leung Lee ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. In particular, this invention provides a melt-recrystallization ATR method, for use alone or in combination with non-melt-recrystallization ATR methods, in which selected Si regions bounded by dielectric-filled trenches are induced to undergo an orientation change by the steps of preamorphization, laser-induced melting, and corner-defect-free templated recrystallization from the melt.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 特别地，本发明提供熔融重结晶ATR方法，其单独使用或与非熔融再结晶ATR方法组合使用，其中通过介电填充沟槽界定的选定的Si区域被诱导通过以下步骤进行取向改变： 熔融前体变形，激光熔化和无角点缺陷的模板重结晶。

公开(公告)号：US20070241323A1

公开(公告)日：2007-10-18

申请号：US11406123

申请日：2006-04-18

申请人： Katherine Saenger ,  Chun-yung Sung ,  Haizhou Yin

发明人： Katherine Saenger ,  Chun-yung Sung ,  Haizhou Yin

IPC分类号： H01L31/00 ,  C30B21/04 ,  H01L29/04 ,  H01L29/10 ,  C30B28/14

CPC分类号： H01L29/045 ,  C30B1/023 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0922 ,  H01L27/1203

摘要： Edge-angle-optimized solid phase epitaxy is described as a method for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane directions. In a first aspect of the invention, twist-angle-optimized bonding and edge-angle-optimized epitaxy are applied to the fabrication of trench-edge-defect-free hybrid orientation substrates comprising (110)-oriented Si device regions in which high-performance p-channel field effect transistors (pFETs) may be formed and amorphized-and-recrystallized changed-orientation (100)-oriented Si device regions in which high-performance n-channel field effect transistors (nFETs) may be formed. In a second aspect of the invention, nFETs are fabricated in (100)-oriented Si regions in hybrid orientation substrates using edge-angle-optimized solid phase epitaxy to achieve trench-edge-defect-free amorphized-and-recrystallized source/drain regions.

摘要翻译： 边缘角优化的固相外延被描述为用于形成混合定向衬底的方法，其包括当Si的沟槽分离区域被重结晶为底层单体的取向时通常看到的没有沟槽边缘缺陷的改变取向Si器件区域 非晶态Si模板。 对于非晶化Si区域重结晶到（100）表面取向的情况，边缘角优化固相外延的无边缘缺陷重结晶可以在其边缘与（100）晶体的边缘对齐的直线Si器件区域中实现 在平面<100>方向。 在本发明的第一方面中，将扭转角优化的结合和边缘角优化的外延应用于包括（110）取向的Si器件区域的无沟槽缺陷的混合取向衬底的制造， 可以形成高性能p沟道场效应晶体管（pFET）和可以形成高性能n沟道场效应晶体管（nFET）的非晶化和再结晶的改变取向（100）取向（100）取向的Si器件区域。 在本发明的第二方面中，使用边缘角优化的固相外延，在混合取向基板中的（100）取向的Si区域中制造nFET，以实现无沟槽边缘缺陷的非晶化和再结晶源极/漏极区域 。

公开(公告)号：US20060244068A1

公开(公告)日：2006-11-02

申请号：US11116053

申请日：2005-04-27

申请人： Joel Desouza ,  Devendra Sadana ,  Katherine Saenger ,  Chun-yung Sung ,  Min Yang ,  Haizhou Yin

发明人： Joel Desouza ,  Devendra Sadana ,  Katherine Saenger ,  Chun-yung Sung ,  Min Yang ,  Haizhou Yin

IPC分类号： H01L27/12

CPC分类号： H01L29/6659 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/7624 ,  H01L21/823807 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/66636 ,  H01L29/7833

摘要： Hybrid orientation substrates allow the fabrication of complementary metal oxide semiconductor (CMOS) circuits in which the n-type field effect transistors (nFETs) are disposed in a semiconductor orientation which is optimal for electron mobility and the p-type field effect transistors (pFETs) are disposed in a semiconductor orientation which is optimal for hole mobility. This invention discloses that the performance advantages of FETs formed entirely in the optimal semiconductor orientation may be achieved by only requiring that the device's channel be disposed in a semiconductor with the optimal orientation. A variety of new FET structures are described, all with the characteristic that at least some part of the FET's channel has a different orientation than at least some part of the FET's source and/or drain. Hybrid substrates into which these new FETs might be incorporated are described along with their methods of making.

摘要翻译： 混合定向衬底允许制造互补金属氧化物半导体（CMOS）电路，其中n型场效应晶体管（nFET）以优选的电子迁移率的半导体取向设置，并且p型场效应晶体管（pFET） 以半导体方向设置，其对于空穴迁移率是最佳的。 本发明公开了完全形成在最佳半导体取向中的FET的性能优点可以通过仅需要将器件的沟道设置在具有最佳取向的半导体中来实现。 描述了各种新的FET结构，其特征在于，至少部分FET通道的FET的源极和/或漏极的至少一部分具有不同的取向。 可以并入其中可并入这些新的FET的混合基板及其制造方法。

公开(公告)号：US08236636B2

公开(公告)日：2012-08-07

申请号：US12972771

申请日：2010-12-20

申请人： Haizhou Yin ,  John A. Ott ,  Katherine L. Saenger ,  Chun-Yung Sung

发明人： Haizhou Yin ,  John A. Ott ,  Katherine L. Saenger ,  Chun-Yung Sung

IPC分类号： H01L21/336

CPC分类号： H01L21/02694 ,  H01L21/02532 ,  H01L21/76264 ,  Y10S438/973

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which the in-plane direction of the (011) DSB layer is aligned with an in-plane direction of the (001) base substrate. Selected regions of the DSB layer are amorphized down to the base substrate to form amorphized regions aligned with the mutually orthogonal in-plane directions of the (001) base substrate, followed by recrystallization using the base substrate as a template. This optimal arrangement of DSB layer, base substrate, and amorphized region orientation provides a near-vertical, essentially defect-free boundary between original-orientation and changed-orientation silicon regions, thus enabling complete boundary region removal with smaller footprint shallow trench isolation than possible with ATR methods not so optimized.

摘要翻译： 本发明提供用于形成混合取向基板和半导体器件结构的改进的非晶化/模板重结晶（ATR）方法。 具有（011）表面晶体取向的直接硅键合（DSB）硅层被结合到具有（001）表面晶体取向的基底硅基板上，以形成其中面内<110>方向的DSB晶片 （011）DSB层与（001）基底的面内<110>方向对准。 DSB层的选定区域被非晶化到底部基板以形成与（001）基底基板的相互正交的平面内100°方向对准的非晶形区域，然后使用基底基板作为模板进行重结晶。 DSB层，基底和非晶区域取向的这种最佳布置提供了原始取向和改变取向硅区域之间近似垂直的，基本上无缺陷的边界，因此可以实现完整的边界区域移除，并且可以实现更小的占地面积的浅沟槽隔离 ATR方法没有如此优化。

公开(公告)号：US20100203708A1

公开(公告)日：2010-08-12

申请号：US12767261

申请日：2010-04-26

申请人： Keith Edward Fogel ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

发明人： Keith Edward Fogel ,  Katherine L. Saenger ,  Chun-Yung Sung ,  Haizhou Yin

IPC分类号： H01L21/26 ,  H01L21/322

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76224 ,  H01L21/823807

摘要： The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of “corner defects” at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprising the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches, (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.

摘要翻译： 本发明提供了用于制造低缺陷密度混合取向基材的改进的非晶化/模板重结晶（ATR）方法。 用于混合取向衬底制造的ATR方法通常从具有第一取向键合到具有第二取向的第二Si层或衬底的Si层开始。 第一Si层的选定区域是非晶化的，然后通过使用第二Si层作为模板将其再结晶成第二Si层的取向。 本发明的工艺流程解决了现有技术ATR方法未公开的两个主要困难：在由沟槽界定的非晶化Si区域的边缘产生“角缺陷”，以及在高温后再结晶缺陷 - 未被沟槽限定的非ATR区域的去除退火。 特别地，本发明提供了一种工艺流程，其包括以下步骤：（i）在没有沟槽的衬底区域中进行非晶化和低温重结晶，（ii）形成在ATR'边缘处的缺陷区域的沟槽隔离区域的形成， d区域，以及（iii）在沟槽隔离区域中进行的高温缺陷去除退火。