Liquid coating system
    1.
    发明授权
    Liquid coating system 失效
    液体涂层系统

    公开(公告)号:US5374312A

    公开(公告)日:1994-12-20

    申请号:US144492

    申请日:1993-11-01

    摘要: A liquid coating system according to the present invention comprises, a liquid supply source, a nozzle having an inlet communicating with the liquid supply source and a substantially linear liquid discharge portion, a pressure feed unit for feeding the liquid under pressure from the liquid supply source to the nozzle by means of compressed gas, a spin chuck for fixedly supporting a semiconductor wafer, an up-and-down cylinder for causing the liquid discharge portion of the nozzle to closely face the wafer on the spin chuck, and a rotating mechanism for rotating the spin chuck. The nozzle includes a liquid reservoir, in which the liquid supplied from the liquid supply source is collected, and a large number of small passages communicating with the liquid reservoir. The liquid coating system further comprises an air operation valve disposed in a communication passage between the inlet of the nozzle and the liquid supply source and used to reduce the pressure of the liquid fed under pressure to the liquid reservoir.

    摘要翻译: 根据本发明的液体涂覆系统包括:液体供应源,具有与液体供应源连通的入口和基本上线性的液体排出部分的喷嘴;压力供给单元,用于在液体供应源 通过压缩气体到喷嘴,用于固定地支撑半导体晶片的旋转卡盘,用于使喷嘴的液体排出部分紧密地面对旋转卡盘上的晶片的上下缸体,以及用于 旋转旋转卡盘。 喷嘴包括从液体供应源供应的液体被收集的液体储存器和与液体储存器连通的大量小通道。 液体涂布系统还包括设置在喷嘴入口和液体供应源之间的连通通道中的空气操作阀,用于将在压力下供给的液体的压力降低到液体储存器。

    Liquid supplying device
    2.
    发明授权
    Liquid supplying device 失效
    液体供应装置

    公开(公告)号:US6015066A

    公开(公告)日:2000-01-18

    申请号:US991783

    申请日:1997-12-16

    IPC分类号: G03F7/30 B67D5/08

    CPC分类号: G03F7/30 Y10T137/3124

    摘要: Disclosed herein is a device for supplying a liquid to a plurality of apparatuses which apply the liquid to substrates to process the substrates. The device comprises a tank containing the liquid, a supply passage for supplying the liquid from the tank to the apparatuses, branch passages connected to the supply passage, for supplying the liquid to liquid-applying members provided in the apparatuses, and valves provided on the branch passages, respectively. The valves are controlled each other, for opening and closing the branch passages such that the liquid-applying member of one apparatus applies the liquid to a substrate while the liquid-applying member of any other apparatus remains to apply the liquid to a substrate.

    摘要翻译: 这里公开了一种用于将液体供应到将液体施加到基板以处理基板的多个装置的装置。 该装置包括容纳液体的容器,用于将液体从罐供给到设备的供给通道,连接到供给通道的分支通道,用于将液体供应到设置在设备中的液体施加部件, 分支通道。 阀被彼此控制,用于打开和关闭分支通道,使得一个设备的液体施加构件将液体施加到基底,同时任何其他设备的液体施加构件保持将液体施加到基底。

    Projection display device
    3.
    发明授权
    Projection display device 有权
    投影显示设备

    公开(公告)号:US08641202B2

    公开(公告)日:2014-02-04

    申请号:US12551833

    申请日:2009-09-01

    CPC分类号: G03B21/26

    摘要: A projection display device includes: a light modulator for modulating light from a light source; a polarizer disposed at a position facing the light modulator; a cooling section for allowing an air to flow in a space between the light modulator and the polarizer; and an air deflector for deflecting the air flowing in the space between the light modulator and the polarizer toward the polarizer.

    摘要翻译: 投影显示装置包括:调制器,用于调制来自光源的光; 设置在面向所述光调制器的位置处的偏振器; 用于允许空气在所述光调制器和所述偏振器之间的空间中流动的冷却部分; 以及用于使在光调制器和偏振器之间的空间中流动的空气偏向偏振器的空气导流板。

    Solution processing apparatus and method
    4.
    发明授权
    Solution processing apparatus and method 有权
    解决方案处理装置和方法

    公开(公告)号:US06533864B1

    公开(公告)日:2003-03-18

    申请号:US09639172

    申请日:2000-08-16

    IPC分类号: B05C1110

    CPC分类号: H01L21/6715 B05C11/08

    摘要: An upper side of a cup provided around a wafer is formed in a rectangular shape and a lower side thereof is formed in a cylindrical shape. The cup is formed such that, when seen from above, the portion forming the cylindrical shape is positioned within the portion forming the rectangular shape. The cup has a raising and lowering mechanism and is controlled by a control section. The upper side of the cup is placed by the side of the wafer during a scan by a supply nozzle. The lower side of the cup is placed over an upper level and a lower level of the wafer while a rinse liquid and a developing solution are shaken off. The scan by the supply nozzle is performed with the supply nozzle positioned in the upper cup portion.

    摘要翻译: 设置在晶片周围的杯的上侧形成为矩形,其下侧形成为圆筒状。 杯形成为从上方观察,形成圆筒形状的部分位于形成矩形形状的部分内。 杯具有升降机构,由控制部控制。 杯子的上侧在扫描期间被供给喷嘴放置在晶片的侧面。 将杯的下侧放置在晶片的上层和下层上,同时冲洗液体和显影液被摇动。 由供给喷嘴进行的扫描由位于上杯部的供给喷嘴进行。

    Developing apparatus and method thereof
    5.
    发明授权
    Developing apparatus and method thereof 失效
    显影装置及其制造方法

    公开(公告)号:US06312171B1

    公开(公告)日:2001-11-06

    申请号:US09635196

    申请日:2000-08-09

    IPC分类号: G03D500

    CPC分类号: G03F7/3021

    摘要: A current member is disposed above a wafer holding section for holding a wafer and a top plate and a bottom plate of the current member are positioned so that respective air holes are overlapped each other in a vertical direction, and a developing solution is heaped on a front face of the wafer. Thereafter, the developing is performed with the bottom plate of the current member slid in a lateral direction so that the air holes are not overlapped each other in the vertical direction. In this configuration, air streams to the wafer are obstructed during the developing because the air holes in the current member are obstructed in the vertical direction, whereby occurrence of temperature distribution of the developing solution within the plane of the wafer caused by flows of air currents to the wafer is prevented and uniform developing processing can be performed.

    摘要翻译: 电流部件设置在用于保持晶片的晶片保持部分上方,并且当前部件的顶板和底板被定位成使得相应的气孔在垂直方向上彼此重叠,并且显影液堆积在 晶片前面。 此后,当前构件的底板沿横向方向滑动,使得气孔在垂直方向上不重叠时进行显影。 在这种构造中,由于当前构件中的空气孔在垂直方向上被阻塞,所以在显影期间阻挡了流到晶片的空气流,从而由于气流的流动而导致显影液在晶片平面内的温度分布的发生 防止了晶片,并且可以进行均匀的显影处理。

    Substrate coating unit and substrate coating method

    公开(公告)号:US07022190B2

    公开(公告)日:2006-04-04

    申请号:US10146799

    申请日:2002-05-17

    申请人: Yuji Matsuyama

    发明人: Yuji Matsuyama

    IPC分类号: B05C11/00

    摘要: The present invention is a coating unit for coating a substrate with a coating solution, comprising a coating solution discharge member for discharging the coating solution to the substrate which is positioned in a downward part. A lower surface of the coating solution discharge member is in a shape having a length longer, at least, than the radius of the substrate and having a narrow width. A coating solution discharge port is disposed in a portion of the coating solution discharge member, facing the center of the substrate, while a solvent mist discharge port for discharging a solvent mist of the coating solution is disposed in a portion facing a peripheral portion including an outer edge potion of the substrate, when the coating solution discharge member is positioned above the radius of the substrate.

    Method for heat processing of substrate
    8.
    发明授权
    Method for heat processing of substrate 有权
    基板热处理方法

    公开(公告)号:US06969538B2

    公开(公告)日:2005-11-29

    申请号:US09947474

    申请日:2001-09-07

    摘要: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

    摘要翻译: 本发明涉及一种热处理基板的方法。 在基板上形成涂膜之后,在预定的高温下烘烤基板。 通过首先将衬底温度从预定的低温升高到低于涂膜反应的预定反应温度的预定中间温度来进行烘烤步骤。 接下来,第二烘烤步骤将基板保持在预定中间温度一段预定的时间,然后是将基板的温度升高到高于预定反应温度的预定高温的第三步骤。 当衬底的温度达到反应温度时,这导致衬底表面内的均匀温度。 因此,均匀地进行由于基板表面内的涂膜的热处理引起的化学反应。

    Method and system for coating and developing
    9.
    发明申请
    Method and system for coating and developing 审中-公开
    涂层和开发方法和系统

    公开(公告)号:US20050048421A1

    公开(公告)日:2005-03-03

    申请号:US10964695

    申请日:2004-10-15

    摘要: In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.

    摘要翻译: 在基材的涂布和显影处理中,本发明包括以下步骤:向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后,对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中,然后将气密封闭室内的压力降低到预定压力,以从衬底移除附着在室内的衬底上的杂质,以预定 时间,其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。 根据本发明,在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分,蒸汽,氧气,臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒 可以在优选的条件下进行曝光处理。 由于基于在预定位置测量的杂质的密度来调节压力降低时的压力,时间和减压速度,因此可以在优选的情况下去除附着在基底上的杂质,例如水分和氧气 最低要求条件根据杂质的粘附量。