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公开(公告)号：US07923306B2
公开(公告)日：2011-04-12
申请号：US11052000
申请日：2005-02-04
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译： 方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。 该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动。
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2.发明授权Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理公开(公告)号：US07935941B2
公开(公告)日：2011-05-03
申请号：US11051263
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo , Frank G. Evans
CPC分类号： B23K26/067
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。
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3.发明申请RECONFIGURABLE SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS 审中-公开使用多个激光束的可重构半导体结构处理公开(公告)号：US20090011614A1
公开(公告)日：2009-01-08
申请号：US12210955
申请日：2008-09-15
IPC分类号： H01L21/268 , B23K26/08
CPC分类号： B23K26/067 , B23K26/0624 , B23K26/066 , B23K26/0676 , B23K26/0853 , B23K2101/40 , B23K2103/10 , B23K2103/12 , B23K2103/14 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体晶片上或其中的结构。 结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。 这些结构被排列成行，并且可以以轴上模式或横轴模式进行处理。 在轴上模式下，光束点落在同一行的结构上，因为它们沿着行移动。 在横轴模式下，当束沿着行移动时，束斑落在不同行中的结构上。
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4.发明授权公开(公告)号：US08148211B2
公开(公告)日：2012-04-03
申请号：US11051500
申请日：2005-02-04
CPC分类号： B23K26/067 , H01L21/76894
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法同时将第一和第二激光束引导到行中不同的第一和第二结构。 该方法使第一和第二激光束轴线相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动，以便用第一和第二激光器中的一个或多个选择性地照射该行中的结构 梁同时进行。
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5.发明申请SYSTEM FOR SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS 审中-公开使用多个激光束波束进行半导体结构处理的系统公开(公告)号：US20110186555A1
公开(公告)日：2011-08-04
申请号：US13085291
申请日：2011-04-12
IPC分类号： B23K26/06
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译： 方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。 该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向基本上一致地移动。
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6.发明授权Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset 有权半导体结构的处理使用多个激光束点间隔轴上与横轴偏移公开(公告)号：US07425471B2
公开(公告)日：2008-09-16
申请号：US11051958
申请日：2005-02-04
IPC分类号： H01L21/82
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不同的第一和第二结构。 第二点在与行长度方向垂直的方向上偏离第一点一定量。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。
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7.发明授权Methods and systems for semiconductor structure processing using multiple laser beam spots 有权使用多个激光束点进行半导体结构处理的方法和系统公开(公告)号：US08383982B2
公开(公告)日：2013-02-26
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen , Clint Vandergiessen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen , Clint Vandergiessen
IPC分类号： B23K26/38 , B23K26/067
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。 结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。
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8.发明授权Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权使用多个横向间隔开的激光束点进行多次打击的半导体结构处理公开(公告)号：US07687740B2
公开(公告)日：2010-03-30
申请号：US11051262
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译： 方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。 该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。 第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构 或在与第一行不同的第二行上的两个相邻结构之间。 所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构， 并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。
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9.发明申请Methods and systems for semiconductor structure processing using multiple laser beam spots 有权使用多个激光束点进行半导体结构处理的方法和系统公开(公告)号：US20080121627A1
公开(公告)日：2008-05-29
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。 结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。
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10.发明申请SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LATERALLY SPACED LASER BEAM SPOTS DELIVERING MULTIPLE BLOWS 审中-公开半导体结构处理使用多个间隔激光束波束输送多个发泡公开(公告)号：US20100089881A1
公开(公告)日：2010-04-15
申请号：US12638685
申请日：2009-12-15
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译： 方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。 该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。 第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构 或在与第一行不同的第二行上的两个相邻结构之间。 所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构， 并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。
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