公开(公告)号：US20120270339A1

公开(公告)日：2012-10-25

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US08236684B2

公开(公告)日：2012-08-07

申请号：US12147986

申请日：2008-06-27

申请人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

发明人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang sub Yim

IPC分类号： H01L21/4763

CPC分类号： H01L21/3141 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76814 ,  H01L21/76831

摘要： A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

摘要翻译： 提供了一种处理基板的方法和装置。 在基板上形成多孔介电层。 在一些实施例中，电介质可以由致密的电介质层封盖。 对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。 密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。 通过定向选择性蚀刻去除覆盖图案开口的场区域和底部部分的致密保形孔隙电介质层的部分。

公开(公告)号：US20100015816A1

公开(公告)日：2010-01-21

申请号：US12173659

申请日：2008-07-15

申请人： Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

发明人： Kelvin Chan ,  Kang Sub Yim ,  Alexandros T. Demos

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274

摘要： A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

摘要翻译： 提供一种处理基板的方法，其中第一有机硅前体，第二有机硅前体，致孔剂和氧源被提供到处理室。 第一有机硅前体包括具有通常低碳含量的化合物。 第二有机硅前体包括具有较高碳含量的化合物。 致孔剂包括烃化合物。 施加RF功率以在衬底上沉积膜，并且调节各种反应物流的流速以随着膜的部分沉积而改变碳含量。 在一个实施方案中，沉积膜的初始部分具有低碳含量，因此是氧化物，而连续部分具有较高的碳含量，变成碳氧化物。 另一个实施方案不具有类似氧化物的初始部分。 膜的后处理在具有较高碳含量的膜的部分中产生孔。

公开(公告)号：US08492170B2

公开(公告)日：2013-07-23

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US20120208366A1

公开(公告)日：2012-08-16

申请号：US13455299

申请日：2012-04-25

申请人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang Sub Yim

发明人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Meiyee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang Sub Yim

IPC分类号： H01L21/311

CPC分类号： H01L21/3141 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76814 ,  H01L21/76831

摘要： A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

摘要翻译： 提供了一种处理基板的方法和装置。 在基板上形成多孔介电层。 在一些实施例中，电介质可以由致密的电介质层封盖。 对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。 密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。 通过定向选择性蚀刻去除覆盖图案开口的场区域和底部部分的致密保形孔隙电介质层的部分。

公开(公告)号：US07297376B1

公开(公告)日：2007-11-20

申请号：US11483842

申请日：2006-07-07

申请人： Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

发明人： Kang Sub Yim ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Josephine Ju-Hwei Chang Liu ,  Sang H. Ahn ,  Yi Zheng ,  Sang In Yi ,  Vu Ngoc Tran Nguyen ,  Alexandros T. Demos

IPC分类号： H05H1/24

CPC分类号： C23C16/029 ,  C23C16/401 ,  C23C16/56

摘要： A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

摘要翻译： 通过将基板定位在具有动力电极的处理室内，并且将一种或多种有机硅化合物的流速和流速为1的起始气体混合物流入处理室，从而提供了一种沉积低介电常数膜的方法 或更多的氧化气体，以通过向电极施加RF功率来沉积起始层。 然后将有机硅化合物流速升高至最终流速以沉积第一过渡层，在该第一过渡层上引入一种或多种致孔剂化合物，并且将流速致孔剂化合物倾斜至最终沉积速率，同时沉积第二过渡层 层。 然后通过流动最终致孔剂和有机硅流速来沉积致孔剂掺杂的氧化硅层，直到RF功率关闭。

公开(公告)号：US08481422B2

公开(公告)日：2013-07-09

申请号：US13455299

申请日：2012-04-25

申请人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Mei-Yee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang Sub Yim

发明人： Kelvin Chan ,  Khaled A. Elsheref ,  Alexandros T. Demos ,  Mei-Yee Shek ,  Lipan Li ,  Li-Qun Xia ,  Kang Sub Yim

IPC分类号： H01L21/4763

CPC分类号： H01L21/3141 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76814 ,  H01L21/76831

摘要： A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

摘要翻译： 提供了一种处理基板的方法和装置。 在基板上形成多孔介电层。 在一些实施例中，电介质可以由致密的电介质层封盖。 对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。 密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。 通过方向选择性蚀刻去除覆盖图案开口的场区域和底部的稠密共形孔隙电介质层的部分。

公开(公告)号：US08877659B2

公开(公告)日：2014-11-04

申请号：US13903483

申请日：2013-05-28

申请人： Kelvin Chan ,  Alexandros T. Demos

发明人： Kelvin Chan ,  Alexandros T. Demos

IPC分类号： H01L21/00 ,  H01L21/263 ,  H01L21/3105

CPC分类号： H01L21/02348 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

摘要翻译： 提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。 在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外（UV）固化过程。

公开(公告)号：US20080280457A1

公开(公告)日：2008-11-13

申请号：US12170248

申请日：2008-07-09

申请人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

公开(公告)号：US20080119058A1

公开(公告)日：2008-05-22

申请号：US11562021

申请日：2006-11-21

申请人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

发明人： DUSTIN W. HO ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos ,  Kelvin Chan ,  Nagarajan Rajagopalan ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/312

CPC分类号： H01L21/31695 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

摘要翻译： 一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和 使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀， 蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积 含致孔剂的有机硅酸盐介电层。