公开(公告)号：US11482382B2

公开(公告)日：2022-10-25

申请号：US16992714

申请日：2020-08-13

Applicant: KEMET Electronics Corporation

Inventor： Yaru Shi ,  Antony P. Chacko ,  Chenyi Gu ,  Ajaykumar Bunha ,  Qingping Chen

IPC: H01G9/00 ,  H01G9/028 ,  H01G9/15 ,  H01B1/12 ,  H01G9/042

Abstract: The invention is related to an improved capacitor and an improved process for forming a capacitor. The process comprises forming an anode comprising a dielectric on the anode. A cathode layer is then formed on the dielectric wherein the cathode layer comprises a self-doped conductive polymer and a cross-linker wherein a weight ratio of crosslinker to self-doped conductive polymer is at least 0.01 to no more than 2.

公开(公告)号：US11177076B2

公开(公告)日：2021-11-16

申请号：US17023870

申请日：2020-09-17

Applicant: KEMET Electronics Corporation

Inventor： Ajaykumar Bunha ,  Antony P. Chacko ,  Qingping Chen ,  Yaru Shi ,  Philip M. Lessner

IPC: H01G9/00 ,  C09D5/24 ,  C09D165/00 ,  C09D4/06 ,  C09D125/18 ,  C09D7/65 ,  H01G9/15 ,  H01G9/025 ,  C08F12/30 ,  H01B1/12 ,  C08F212/14 ,  C09D133/14 ,  H01G9/028 ,  H01G9/042

Abstract: A capacitor comprising an anode foil; and a conductive polymer layer on the anode foil. The conductive polymer layer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and the polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns. The second particles have an average particle diameter of at least 1 nm to no more than 600 nm.

公开(公告)号：US10570520B2

公开(公告)日：2020-02-25

申请号：US15897276

申请日：2018-02-15

Applicant: KEMET Electronics Corporation

Inventor： Yang Jin ,  Qingping Chen

IPC: C23C28/00 ,  C07D409/14 ,  C08G75/06 ,  C25B3/00 ,  H01G9/15 ,  H01G9/042

Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.

公开(公告)号：US20180330888A1

公开(公告)日：2018-11-15

申请号：US16046154

申请日：2018-07-26

Applicant: KEMET Electronics Corporation

Inventor： Yaru Shi ,  Antony P. Chacko ,  Ajaykumar Bunha ,  Qingping Chen

IPC: H01G9/15 ,  H01G9/012 ,  H01G9/028 ,  H01G9/042 ,  H01G9/08 ,  H01G9/00 ,  H01G11/48

CPC classification number: H01G9/15 ,  H01G9/0036 ,  H01G9/012 ,  H01G9/028 ,  H01G9/0425 ,  H01G9/08 ,  H01G11/48 ,  Y10T29/417

Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 μFV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.

公开(公告)号：US09928964B1

公开(公告)日：2018-03-27

申请号：US14470319

申请日：2014-08-27

Applicant: Kemet Electronics Corporation

Inventor： Yang Jin ,  Qingping Chen

IPC: H01G9/00 ,  C07D409/14 ,  C08G75/06 ,  C25B3/00 ,  C23C28/00 ,  H01G4/00 ,  H01G11/00

CPC classification number: H01G9/0032 ,  C07D409/14 ,  C08G75/06 ,  C23C28/00 ,  C25B3/00 ,  H01G4/00 ,  H01G11/00 ,  H01G2009/0014

Abstract: An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100° C. to no more than the lower of 250° C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.

公开(公告)号：US20170338048A1

公开(公告)日：2017-11-23

申请号：US15672000

申请日：2017-08-08

Applicant: KEMET Electronics Corporation

Inventor： Yaru Shi ,  Antony P. Chacko ,  Hong Zhang ,  Qingping Chen ,  Lei Xu ,  Yang Jin ,  Zhen Wu

IPC: H01G9/042 ,  H01G9/07 ,  H01G9/012 ,  C09D5/24 ,  H01G9/00 ,  H01G9/15 ,  H01G9/025

CPC classification number: H01G9/042 ,  C09D5/24 ,  H01G9/0032 ,  H01G9/0036 ,  H01G9/012 ,  H01G9/025 ,  H01G9/028 ,  H01G9/052 ,  H01G9/07 ,  H01G9/15

Abstract: A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer.

公开(公告)号：US09524829B2

公开(公告)日：2016-12-20

申请号：US14595502

申请日：2015-01-13

Applicant: Kemet Electronics Corporation

Inventor： Hong Zhang ,  Qingping Chen ,  Randolph S. Hahn

IPC: H01G9/00 ,  H01G9/012 ,  H01G9/15 ,  H01G9/028

CPC classification number: H01G9/0032 ,  H01G9/0036 ,  H01G9/012 ,  H01G9/028 ,  H01G9/15 ,  Y10T29/417

Abstract: An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.

公开(公告)号：US20210198469A1

公开(公告)日：2021-07-01

申请号：US17167176

申请日：2021-02-04

Applicant: KEMET Electronics Corporation

Inventor： Ajaykumar Bunha ,  Antony P. Chacko ,  Yaru Shi ,  Qingping Chen ,  Philip M. Lessner

IPC: C08L25/18 ,  H01G9/028 ,  H01G9/042 ,  C07C309/28 ,  C07C309/30 ,  H01G9/00 ,  H01G9/04 ,  H01G9/15 ,  H01M4/136 ,  H01M4/137

Abstract: An improved slurry of conductive polymer is provided. The slurry comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented the ratio of Formula A: AxByCz   Formula A wherein: A is polystyrenesulfonic acid or salt of polystyrenesulfonate; B and C separately represent polymerized units substituted by a group selected from: —C(O)OR6 wherein R6 is selected from the group consisting of: —(CHR17)b—R18. All other groups are defined. The conductive polymer has an average particle size of at least 1 nm to no more than 10 microns.

公开(公告)号：US10947376B2

公开(公告)日：2021-03-16

申请号：US16411915

申请日：2019-05-14

Applicant: KEMET Electronics Corporation

Inventor： Ajaykumar Bunha ,  Antony P. Chacko ,  Yaru Shi ,  Qingping Chen ,  Philip M. Lessner

IPC: C08L25/18 ,  C07C309/30 ,  H01G9/042 ,  H01M4/137 ,  H01G9/00 ,  H01G9/028 ,  C07C309/28 ,  H01G9/04 ,  H01G9/15 ,  H01M4/136

Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.

公开(公告)号：US20210005396A1

公开(公告)日：2021-01-07

申请号：US17023870

申请日：2020-09-17

Applicant: KEMET Electronics Corporation

Inventor： Ajaykumar Bunha ,  Antony P. Chacko ,  Qingping Chen ,  Yaru Shi ,  Philip M. Lessner

IPC: H01G9/00 ,  H01G9/042 ,  C09D5/24 ,  C09D165/00 ,  C09D4/06 ,  C09D125/18 ,  C09D7/65 ,  H01G9/15 ,  H01G9/025 ,  C08F12/30 ,  H01B1/12 ,  C08F212/14 ,  C09D133/14 ,  H01G9/028

Abstract: An improved capacitor is provided wherein the capacitor comprising an anode foil; and a conductive polymer layer on the anode foil. The conductive polymer layer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and the polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns. The second particles have an average particle diameter of at least 1 nm to no more than 600 nm.