摘要:
Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6) (In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.
摘要:
A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.
摘要:
Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).
摘要:
Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
摘要:
Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.
摘要:
A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases).
摘要:
A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)
摘要:
Objects of the present invention are to provide a novel titanium complex that has good vaporization characteristics and an excellent thermal stability, and becomes a raw material for forming a titanium-containing thin film by methods such as CVD method or ALD method, its production method, a titanium-containing thin film formed using the same, and its formation method. In the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) and metallic lithium, and then reacting a tetrakisamide complex represented by the general formula (3). (In the formulae, R1 and R4 represent an alkyl group having from 1 to 6 carbon atoms. R2 and R3 each independently represents a hydrogen atom or an alkyl group having from 1 to 3 carbon atoms. R5 and R6 each independently represents an alkyl group having from 1 to 4 carbon atoms.).
摘要:
A ruthenium-containing thin film is produced by the chemical vapor deposition method etc. with the use of an organometallic ruthenium compound represented by the general formula (1), specific example of which is (2,4-dimethyl-pentadienyl)(ethylcyclopentadienyl)ruthenium: or an organometallic ruthenium compound represented by the general formula (7), specific example of which is carbonylbis(2-methyl-1,3-pentadiene)ruthenium: as the precursor.
摘要:
A novel bismuth compound having excellent vaporization characteristic and/or thermal stability, a process of producing the same and a process of producing a film in the film formation by the CVD process are disclosed. Bismuth compounds each represented by the following formula 1, 5 and 9, processes of producing the same, and processes of producing a film. In the formulae, R1 and R7 each represents a lower alkyl group; R2, R8, R12, and R13 each represents a lower alkyl group, a lower alkoxy group, or the like; m represents the number of the substituent R12 in the range of 0-5; n1, n2, and n3 respectively represent the number of the substituent R2, the number of the substituent R8, and the number of the substituent R13 each in the range of 0-4; and R3 to R6, R9 to R11, R14, and R15 each represents hydrogen, a lower alkyl group, or the like, provided that specific combinations of the substituents are excluded.