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    Structure and method of making interconnect element, and multilayer wiring board including the interconnect element
    3.
    发明授权
    Structure and method of making interconnect element, and multilayer wiring board including the interconnect element 有权
    制造互连元件的结构和方法，以及包括互连元件的多层布线板

    公开(公告)号：US07923828B2

    公开(公告)日：2011-04-12

    申请号：US11239744

    申请日：2005-09-30

    申请人： Kimitaka Endo ,  Norihito Masuda ,  Tomokazu Shimada

    发明人： Kimitaka Endo ,  Norihito Masuda ,  Tomokazu Shimada

    IPC分类号： H01R13/60

    CPC分类号： H05K3/4617 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/5383 ,  H01L2924/0002 ,  H05K3/064 ,  H05K3/205 ,  H05K3/423 ,  H05K3/4647 ,  H05K2203/0384 ,  H05K2203/0542 ,  H05K2203/0733 ,  Y10S438/931 ,  Y10T29/49124 ,  H01L2924/00

    摘要： An interconnect element is provided which includes a dielectric element having a first major surface, a second major surface remote from the first major surface, and a plurality of recesses extending inwardly from the first major surface. A plurality of metal traces are embedded in the plurality of recesses, the metal traces having outer surfaces substantially co-planar with the first major surface and inner surfaces remote from the outer surfaces. A plurality of posts extend from the inner surfaces of the plurality of metal traces through the dielectric element, the plurality of posts having tops exposed at the second major surface. A multilayer wiring board including a plurality of such interconnect elements is also provided, as well as various methods for making such interconnect elements and multilayer wiring boards.

    摘要翻译： 提供互连元件，其包括具有第一主表面的电介质元件，远离第一主表面的第二主表面和从第一主表面向内延伸的多个凹槽。 多个金属迹线嵌入在多个凹槽中，金属迹线具有与第一主表面和远离外表面的内表面基本上共面的外表面。 多个柱从多个金属迹线的内表面延伸通过介电元件，多个柱具有在第二主表面处露出的顶部。 还提供了包括多个这种互连元件的多层布线板，以及用于制造这种互连元件和多层布线板的各种方法。

    Structure and method of making interconnect element, and multilayer wiring board including the interconnect element
    5.
    发明申请
    Structure and method of making interconnect element, and multilayer wiring board including the interconnect element 有权
    制造互连元件的结构和方法，以及包括互连元件的多层布线板

    公开(公告)号：US20060079127A1

    公开(公告)日：2006-04-13

    申请号：US11239744

    申请日：2005-09-30

    申请人： Kimitaka Endo ,  Norihito Masuda ,  Tomokazu Shimada

    发明人： Kimitaka Endo ,  Norihito Masuda ,  Tomokazu Shimada

    IPC分类号： H01R13/60

    CPC分类号： H05K3/4617 ,  H01L21/4857 ,  H01L23/49822 ,  H01L23/5383 ,  H01L2924/0002 ,  H05K3/064 ,  H05K3/205 ,  H05K3/423 ,  H05K3/4647 ,  H05K2203/0384 ,  H05K2203/0542 ,  H05K2203/0733 ,  Y10S438/931 ,  Y10T29/49124 ,  H01L2924/00

    摘要： An interconnect element is provided which includes a dielectric element having a first major surface, a second major surface remote from the first major surface, and a plurality of recesses extending inwardly from the first major surface. A plurality of metal traces are embedded in the plurality of recesses, the metal traces having outer surfaces substantially co-planar with the first major surface and inner surfaces remote from the outer surfaces. A plurality of posts extend from the inner surfaces of the plurality of metal traces through the dielectric element, the plurality of posts having tops exposed at the second major surface. A multilayer wiring board including a plurality of such interconnect elements is also provided, as well as various methods for making such interconnect elements and multilayer wiring boards.

    摘要翻译： 提供互连元件，其包括具有第一主表面的电介质元件，远离第一主表面的第二主表面和从第一主表面向内延伸的多个凹槽。 多个金属迹线嵌入在多个凹槽中，金属迹线具有与第一主表面和远离外表面的内表面基本上共面的外表面。 多个柱从多个金属迹线的内表面延伸通过介电元件，多个柱具有在第二主表面处露出的顶部。 还提供了包括多个这种互连元件的多层布线板，以及用于制造这种互连元件和多层布线板的各种方法。

    CMP polishing solution and polishing method
    6.
    发明授权
    CMP polishing solution and polishing method 有权

    公开(公告)号：US09944827B2

    公开(公告)日：2018-04-17

    申请号：US13172397

    申请日：2011-06-29

    申请人： Kouji Mishima ,  Takafumi Sakurada ,  Tomokazu Shimada

    发明人： Kouji Mishima ,  Takafumi Sakurada ,  Tomokazu Shimada

    IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K13/00 ,  C03C15/00 ,  C03C25/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  H01L21/3212 ,  H01L21/7684

    摘要： The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.

    CMP POLISHING LIQUID AND POLISHING METHOD
    7.
    发明申请
    CMP POLISHING LIQUID AND POLISHING METHOD 有权
    CMP抛光液和抛光方法

    公开(公告)号：US20120094491A1

    公开(公告)日：2012-04-19

    申请号：US13376431

    申请日：2010-08-16

    申请人： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

    发明人： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

    IPC分类号： H01L21/306

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

    摘要： The invention relates to a CMP polishing liquid comprising a medium and silica particles as an abrasive grain dispersed into the medium, characterized in that: (A1) the silica particles have a silanol group density of 5.0/nm2 or less; (B1) a biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm; and (C1) an association degree of the silica particles is 1.1 or more. The invention provides a CMP polishing liquid which has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed, and a polishing method producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

    摘要翻译： 本发明涉及包含介质的CMP抛光液和分散在该介质中的磨粒的二氧化硅颗粒，其特征在于：（A1）二氧化硅颗粒的硅烷醇密度为5.0 / nm 2以下; （B1）当通过扫描电子显微镜观察获得的图像中选择20个二氧化硅颗粒时的双轴平均一次粒径为25〜55nm; 和（C1）二氧化硅颗粒的缔合度为1.1以上。 本发明提供了具有高阻隔膜研磨速度，良好的磨粒分散稳定性和高层间电介质抛光速度的CMP抛光液，以及制造半导体基板等的研磨方法，其具有优异的微细加工，薄膜形成 ，尺寸精度，电气性能和高可靠性，低成本。

    CMP POLISHING SOLUTION AND POLISHING METHOD
    8.
    发明申请
    CMP POLISHING SOLUTION AND POLISHING METHOD 有权
    CMP抛光溶液和抛光方法

    公开(公告)号：US20110318929A1

    公开(公告)日：2011-12-29

    申请号：US13172397

    申请日：2011-06-29

    申请人： Kouji Mishima ,  Takafumi Sakurada ,  Tomokazu Shimada

    发明人： Kouji Mishima ,  Takafumi Sakurada ,  Tomokazu Shimada

    IPC分类号： H01L21/306 ,  C09K13/00 ,  C09K13/04 ,  H01L21/304

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  H01L21/3212 ,  H01L21/7684

    摘要： The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.

    摘要翻译： 本发明的CMP抛光溶液包含（A）含有具有1,2,3-三唑并[4,5-b]吡啶骨架的化合物的金属腐蚀抑制剂，（B）具有正ζ电位的磨粒 CMP抛光溶液，（C）金属氧化物增溶剂和（D）氧化剂。 本发明的研磨方法包括：第一研磨工序，其中，具有层叠绝缘性污物的基板的导电性物质层，具有层叠绝缘膜的上表面和沟槽，在层间绝缘膜的表面形成的阻挡层和 形成为覆盖阻挡层的导电物质层被抛光以露出位于层间绝缘膜的升高部分上的阻挡层，以及第二抛光步骤，其中使用CMP抛光溶液抛光在第一抛光步骤中暴露的阻挡层 以暴露层间绝缘膜的升高部分。

    Member for Interconnecting Wiring Films and Method for Producing the Same
    9.
    发明申请
    Member for Interconnecting Wiring Films and Method for Producing the Same 审中-公开
    互连接线片成员及其生产方法

    公开(公告)号：US20080264678A1

    公开(公告)日：2008-10-30

    申请号：US11662024

    申请日：2005-09-06

    申请人： Tomoo lijima ,  Hiroshi Odaira ,  Tomokazu Shimada ,  Akifumi Iijima

    发明人： Tomoo lijima ,  Hiroshi Odaira ,  Tomokazu Shimada ,  Akifumi Iijima

    IPC分类号： H05K1/00 ,  H05K3/02

    CPC分类号： H05K3/462 ,  H05K1/036 ,  H05K3/06 ,  H05K3/4038 ,  H05K2201/0154 ,  H05K2201/0355 ,  H05K2201/09827 ,  H05K2201/10378 ,  H05K2203/0113 ,  H05K2203/066 ,  H05K2203/1189 ,  H05K2203/1461 ,  Y10T29/49156

    摘要： The connection resistance between a metal bump (8) and a metal layer (10) for forming a wiring film deposited later is further decreased, the connection stability is enhanced, the wiring path passing through the metal bump (8) is further shortened, the planarity is enhanced, and the metal bump (8) does not come out easily. A wiring film interconnecting member wherein a plurality of pillar-like metal bumps (8) composed of copper and having a cross-sectional area of the top surface smaller than that of the bottom surface and interconnecting the wiring films of a multilayer wiring board are buried in an interlayer insulation film (10) in such a way that at least one end projects. The upper surface of the interlayer insulation film (10) is so curved as to be high at a part in contact with the metal bump (8) and lower gradually as being farther therefrom.

    摘要翻译： 金属凸块（8）和用于形成稍后沉积的布线膜的金属层（10）之间的连接电阻进一步降低，连接稳定性提高，穿过金属凸块（8）的布线路径进一步缩短， 平坦度提高，并且金属凸块（8）不容易脱出。 一种布线膜互连构件，其中埋设有由铜构成的多个柱状金属凸块（8），其顶表面的横截面积小于底面的横截面面积并且互连多层布线板的布线膜 在层间绝缘膜（10）中，至少一个端部突出。 层间绝缘膜（10）的上表面弯曲成与金属凸块（8）接触的部分高，并且随着其越远逐渐下降。

    CMP polishing liquid and polishing method
    10.
    发明授权
    CMP polishing liquid and polishing method 有权
    CMP抛光液和抛光方法

    公开(公告)号：US08883031B2

    公开(公告)日：2014-11-11

    申请号：US13376431

    申请日：2010-08-16

    申请人： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

    发明人： Mamiko Kanamaru ,  Tomokazu Shimada ,  Takashi Shinoda

    IPC分类号： B44C1/22 ,  H01L21/302 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

    摘要： The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

    摘要翻译： 含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。 二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。 二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。