公开(公告)号：US5503171A

公开(公告)日：1996-04-02

申请号：US172419

申请日：1993-12-22

申请人： Kenji Yokomizo ,  Chihaya Tashima ,  Eiichi Mukai ,  Yoshiyuki Honda ,  Naohiko Hamamura ,  Shinya Murakami ,  Yasuhiro Chouno

发明人： Kenji Yokomizo ,  Chihaya Tashima ,  Eiichi Mukai ,  Yoshiyuki Honda ,  Naohiko Hamamura ,  Shinya Murakami ,  Yasuhiro Chouno

IPC分类号： H01L21/00 ,  B08B3/04

CPC分类号： H01L21/67057 ,  Y10S134/902

摘要： A substrates-washing apparatus includes a process vessel in which washing solution is stored to wash a plurality of substrates, a boat for holding the substrates parallel to one another in the process vessel, solution supply openings formed in the bottom of the process vessel, a solution supply system communicated with the solution supply openings to supply washing solution into the process vessel through the solution supply openings, and a straightening plate arranged between the substrates held on the boat and the solution supply openings in the bottom of the process vessel and provided with a plurality of apertures through which washing solution passes. The apertures form plural lines in the longitudinal direction of the straightening plate, the apertures in each line are arranged to correspond to the substrates alternately, and the apertures in one line are shifted from those in the other adjacent line.

摘要翻译： 基板洗涤装置包括处理容器，其中存储洗涤溶液以洗涤多个基板，用于将基板保持在处理容器中彼此平行的船，在处理容器的底部形成的溶液供应开口， 溶液供应系统与溶液供应开口连通，通过溶液供应开口将洗涤溶液供应到处理容器中，以及设置在保持在船上的基板和处理容器底部的溶液供应开口之间的矫直板， 洗涤液通过的多个孔。 这些孔在矫直板的长度方向上形成多条线，每条线中的孔交替地布置成对应于基底，并且一条线中的孔与另一条相邻的线偏移。

公开(公告)号：US5435075A

公开(公告)日：1995-07-25

申请号：US043731

申请日：1993-04-07

申请人： Hirofumi Shiraishi ,  Kenji Yokomizo ,  Kazuyoshi Mizumoto ,  Yoshiyuki Honda

发明人： Hirofumi Shiraishi ,  Kenji Yokomizo ,  Kazuyoshi Mizumoto ,  Yoshiyuki Honda

IPC分类号： F26B5/08 ,  H01L21/00 ,  F26B17/24

CPC分类号： H01L21/67034 ,  F26B5/08

摘要： A spindrier comprises a box enclosing a plurality of wafers, a motor for rotating the wafers in the box, upper and lower clamp bars for holding the wafers face to face and substantially perpendicular to a rotating shaft of rotating means, and gas introducing and discharging mechanisms for generating a flow of clean gas in the box. A sectional area of an open bottom of the box is smaller than a sectional area of an open top of the box, and the gas flows from the open top to the open bottom.

摘要翻译： 支架包括封闭多个晶片的盒子，用于使盒中的晶片旋转的电动机，用于将晶片面对面并且基本上垂直于旋转装置的旋转轴保持晶片的上下夹具，以及气体引入和排出机构 用于在箱中产生清洁气体流。 箱的开口底部的截面面积小于箱体开口顶部的截面积，气体从开口顶部流向开口底部。

公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US5890389A

公开(公告)日：1999-04-06

申请号：US962044

申请日：1997-10-31

申请人： Makoto Ohba ,  Noboru Hagiwara ,  Kenji Yokomizo ,  Tadao Otani

发明人： Makoto Ohba ,  Noboru Hagiwara ,  Kenji Yokomizo ,  Tadao Otani

IPC分类号： B21H8/00 ,  B21B1/08 ,  B21H8/02 ,  B21B13/08

CPC分类号： B21B1/0805

摘要： A modified cross-section material having a thin part and a thick part in its widthwise direction is manufactured through a plurality of roll stages. Each rolling stage comprises of a set of a convex roll and a flat roll, wherein the convex roll has a convex part. The thin part is formed in accordance with the lengthwise expansion by the convex part of the convex roll, and the thick part is formed in accordance with the lengthwise expansion by a part other than the convex part of the convex roll.

摘要翻译： 通过多个辊台制造在宽度方向上具有薄部分和厚部分的改进的横截面材料。 每个轧制阶段包括一组凸辊和平辊，其中凸辊具有凸部。 根据凸辊的凸部的长度方向的膨胀形成薄壁部，根据凸辊的凸部以外的部分的长度方向的膨胀来形成厚壁部。

公开(公告)号：US07678199B2

公开(公告)日：2010-03-16

申请号：US11470353

申请日：2006-09-06

申请人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

发明人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

IPC分类号： B08B3/04

CPC分类号： H01L21/02052 ,  H01L21/02057 ,  Y10S134/902

摘要： A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter replacement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.

摘要翻译： 提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法，从而降低了过滤器清洁或过滤器更换的频率。 该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中，其中晶片不以第一速度旋转或旋转，并且处理液体从处理室排出到 处理液体循环系统。 随后，停止将晶片暴露于处理液体，并以大于第一速度的第二速度转动晶片，从晶片离心分离膜片。 接下来，将晶片暴露于相同或不同的处理液体，并且处理液体从处理室排出到处理液体排出口。

公开(公告)号：US07108923B1

公开(公告)日：2006-09-19

申请号：US11247297

申请日：2005-10-12

申请人： Yasuyuki Ito ,  Katsuyuki Matsumoto ,  Kenji Yokomizo ,  Yasuhiro Kusano ,  Shinichiro Shimizu ,  Muneo Kodaira ,  Katsumi Nomura

发明人： Yasuyuki Ito ,  Katsuyuki Matsumoto ,  Kenji Yokomizo ,  Yasuhiro Kusano ,  Shinichiro Shimizu ,  Muneo Kodaira ,  Katsumi Nomura

IPC分类号： B32B15/00 ,  B32B15/04 ,  B32B15/20

CPC分类号： C25D5/48 ,  C22C19/03 ,  C23C22/83 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/3225 ,  C23C28/345 ,  C23C2222/10 ,  C25D5/10 ,  C25D5/16 ,  H05K3/384 ,  H05K3/389 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0723 ,  Y10T428/12438 ,  Y10T428/12792 ,  Y10T428/12847 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/273 ,  Y10T428/31663

摘要： A copper foil for a printed circuit board has a rust preventing layer formed by a trivalent chromium chemical conversion treatment on a surface of the copper foil that the copper foil is bonded to a base material for the printed circuit board. T copper foil is of copper or copper alloy, and the rust preventing layer contains 0.5 to 2.5 μg/cm2 of chromium converted into metallic chromium.

摘要翻译： 用于印刷电路板的铜箔具有在铜箔的表面上通过三价铬化学转化处理形成的防锈层，铜箔与印刷电路板的基材接合。 T铜箔为铜或铜合金，防锈层含有转化为金属铬的铬的0.5〜2.5马克/平方厘米。

公开(公告)号：US06199564B1

公开(公告)日：2001-03-13

申请号：US09185413

申请日：1998-11-03

申请人： Kenji Yokomizo

发明人： Kenji Yokomizo

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  H01L21/67051 ,  Y10S134/902

摘要： A wafer processing apparatus prevents the reattachment of particles to wafers, such as semiconductor wafers, when processing the wafers by immersing the same held in a vertical attitude in a processing liquid and a cleaning liquid. When immersing the wafers processed by the processing liquid in the cleaning liquid contained in and overflowing a cleaning tank, a wafer holding device holding the wafers in a vertical attitude is stopped temporarily upon the immersion of lower parts of the wafers in the cleaning liquid. Consequently, particles contained in the processing liquid remaining on the wafers are dispersed in the overflowing cleaning liquid, so that the particles can be removed from the wafers and the reattachment of the particles to the wafers does not occur. When transferring the processed wafers to another processing tank or a cleaning tank, a clean gas is blown upward from below the wafers to suppress the down flow of the processing liquid remaining on the wafers in order that films formed on the wafers can be processed uniformly. This serves to improve the yield.

公开(公告)号：US5730162A

公开(公告)日：1998-03-24

申请号：US583979

申请日：1996-01-11

申请人： Naoki Shindo ,  Shigenori Kitahara ,  Takayuki Toshima ,  Kenji Yokomizo

发明人： Naoki Shindo ,  Shigenori Kitahara ,  Takayuki Toshima ,  Kenji Yokomizo

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L21/677 ,  B08B13/00

CPC分类号： H01L21/67057 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67781 ,  Y10S134/902 ,  Y10S414/137

摘要： A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rinse solution through the discharge path.

摘要翻译： 底物洗涤装置包括洗涤液，洗涤液供应源，用于使洗涤液从浴中溢出的第一路径，漂洗溶液供应源，用于通过冲洗溶液的第二路径，与第一和第二通道连通的共同路径 第二路径以及底部的第一阀，第一阀，第二阀，从第一路径分支的排出路径和控制部，其中第一阀包括用于打开/关闭第一路径的第一主体， 第三路径，其平行于第一路径布置并且具有小于第一路径的直径的直径;以及用于打开/关闭第三路径的第二主体，使得第一主体被打开并且第二主体被关闭，以允许 洗涤液流入浴中，另一方面关闭第一体，打开第二体，使冲洗液流入浴中，残留在第一和第三路径中的洗涤液排出 d与冲洗溶液一起通过排放路径。

公开(公告)号：US08221897B2

公开(公告)日：2012-07-17

申请号：US12168937

申请日：2008-07-08

申请人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo

发明人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo

IPC分类号： B21C37/00 ,  C22C9/00 ,  C25D7/04

CPC分类号： H05K1/09 ,  B21B1/40 ,  B21B38/00 ,  B21B38/02 ,  B21B2003/005 ,  H05K1/0393 ,  H05K2201/0355 ,  Y10T428/12431

摘要： A rolled copper foil according to the present invention includes a crystal grain alignment wherein: when normalized intensity of {200}Cu plane diffraction of a copper crystal in results obtained by an X-ray diffraction pole figure measurement with respect to a rolled surface is plotted against at different values of angle α, the normalized intensity being obtained during a β scanning in the pole figure measurement, a ratio of a maximum value A of the normalized intensity with angle α in a range of 40° to 60° to a maximum value B of the normalized intensity with angle α in a range of 80° to 90° is equal to or greater than 4; and when the normalized intensity increases with increasing angle α in a range of 25° to 45°, there is essentially no area in which the normalized intensity increases stepwise.

摘要翻译： 根据本发明的轧制铜箔包括晶粒取向，其中：绘制通过相对于轧制表面的X射线衍射极数测量获得的结果中铜晶体的{200} Cu平面衍射的归一化强度被绘制 在角度α的不同值下，归一化强度在a＆bgr期间获得; 在极坐标测量中扫描，归一化强度的最大值A与40度至60度之间的角度α的比值与80度至90度范围内的角度α的归一化强度的最大值B的比率 °等于或大于4; 并且当归一化强度随着角度α在25°至45°的范围内增加时，基本上没有标准化强度逐步增加的区域。

公开(公告)号：US20090017325A1

公开(公告)日：2009-01-15

申请号：US12168937

申请日：2008-07-08

申请人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo

发明人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo

IPC分类号： B32B15/20

CPC分类号： H05K1/09 ,  B21B1/40 ,  B21B38/00 ,  B21B38/02 ,  B21B2003/005 ,  H05K1/0393 ,  H05K2201/0355 ,  Y10T428/12431

摘要： A rolled copper foil according to the present invention includes a crystal grain alignment wherein: when normalized intensity of {200}Cu plane diffraction of a copper crystal in results obtained by an X-ray diffraction pole figure measurement with respect to a rolled surface is plotted against at different values of angle α, the normalized intensity being obtained during a β scanning in the pole figure measurement, a ratio of a maximum value A of the normalized intensity with angle α in a range of 40° to 60° to a maximum value B of the normalized intensity with angle α in a range of 80° to 90° is equal to or greater than 4; and when the normalized intensity increases with increasing angle α in a range of 25° to 45°, there is essentially no area in which the normalized intensity increases stepwise.

摘要翻译： 根据本发明的轧制铜箔包括晶粒取向，其中：绘制通过相对于轧制表面的X射线衍射极数测量获得的结果中铜晶体的{200} Cu平面衍射的归一化强度被绘制 在角度α的不同值下，在极坐标测量中的β扫描期间获得的归一化强度，归一化强度的最大值A与40度至60度范围内的角度α的比值与最大值 角度α在80°至90°的范围内的归一化强度的B等于或大于4; 并且当归一化强度随着角度α在25°至45°的范围内增加而增加时，基本上没有标准化强度逐步增加的区域。