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14 条记录 (耗时 0.057 秒)

    Doped photoconductive film comprising selenium and tellurium
    6.
    发明授权
    Doped photoconductive film comprising selenium and tellurium 失效
    包含硒和碲的掺杂光导膜

    公开(公告)号：US4463279A

    公开(公告)日：1984-07-31

    申请号：US380779

    申请日：1982-05-21

    申请人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

    发明人： Keiichi Shidara ,  Kenkichi Tanioka ,  Teruo Uchida ,  Chushirou Kusano ,  Yukio Takasaki ,  Yasuhiko Nonaka ,  Eisuke Inoue

    IPC分类号： H01L31/0248 ,  H01J29/45 ,  H01L31/08 ,  H01J31/38

    CPC分类号： H01L31/08 ,  H01J29/456

    摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.

    摘要翻译： 一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有 碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。 这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。 可以显着提高归因于高强度入射光的后图像特性。

    Image pick-up tube target
    7.
    发明授权
    Image pick-up tube target 失效
    图像拾取管目标

    公开(公告)号：US4563611A

    公开(公告)日：1986-01-07

    申请号：US548022

    申请日：1983-11-02

    申请人： Yasuhiko Nonaka ,  Eisuke Inoue ,  Keiichi Shidara ,  Kenkichi Tanioka

    发明人： Yasuhiko Nonaka ,  Eisuke Inoue ,  Keiichi Shidara ,  Kenkichi Tanioka

    IPC分类号： H01J29/45 ,  H01L31/08 ,  H01J31/26

    CPC分类号： H01J29/456

    摘要： A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.

    摘要翻译： 感光图像拾取管目标包括透明基板，形成在透明基板上的N型导电膜和与N型导电膜整流接触的P型光电导膜，并且包含Se，As和Te作为 敏化剂。 P型光电导膜包括与N型导电膜邻接的第一层，含有94 +/- 1重量％的Se和6 +/- 0.5重量％的As，形成在第一层上的第二层 并且含有64 +/- 4重量％的Se，3 +/- 0.5重量％的As和33 +/- 2重量％的Te，第三层形成在第二层上并含有Se和As， 以及在所述第一层上延伸的氟化物掺杂区域和所述第二层的前半层，并且氟化物浓度为0.1〜3.0重量％。 第三层的As浓度在与第二层的后半层相邻的位置具有28 +/- 1重量％的峰值，并且逐渐降低。

    Image pick-up tube target
    8.
    发明授权
    Image pick-up tube target 失效
    图像拾取管目标

    公开(公告)号：US4717854A

    公开(公告)日：1988-01-05

    申请号：US830714

    申请日：1986-02-19

    申请人： Masanao Yamamoto ,  Eisuke Inoue ,  Keiichi Shidara ,  Eikyuu Hiruma

    发明人： Masanao Yamamoto ,  Eisuke Inoue ,  Keiichi Shidara ,  Eikyuu Hiruma

    IPC分类号： H01J29/45 ,  H01J31/26 ,  H01J31/38

    CPC分类号： H01J29/456

    摘要： An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.

    摘要翻译： 包括形成在透明基板上的N型导电膜的图像拾取管目标和与N型导电膜整流接触的P型光电导膜，并且包括含有As，氟化物和Se的第一层，第二层 含有As，Te和Se的层，含有氟化物的第二层的一部分，含有As和Se的第三层，第三层的组成沿其厚度方向不同，含有As和Se的第四层，其中 第二层中的As浓度沿其厚度方向连续变化，在第二层中，最小As浓度位于第二层的第一层侧，最大As浓度位于第二层的第三层侧 第二层。

    Image pick-up tube target
    9.
    发明授权
    Image pick-up tube target 失效
    图像拾取管目标

    公开(公告)号：US4816715A

    公开(公告)日：1989-03-28

    申请号：US71308

    申请日：1987-07-09

    申请人： Takaaki Unnai ,  Yasuhiko Nonaka ,  Eisuke Inoue

    发明人： Takaaki Unnai ,  Yasuhiko Nonaka ,  Eisuke Inoue

    IPC分类号： H01J29/45 ,  H01J31/38

    CPC分类号： H01J29/456

    摘要： There is disclosed an image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As and Se, the average concentration of As in the first layer being below 8% by weight, a second layer containing As and Se, a third layer containing As and Se, the concentration of As being in the range of 8 to 20% by weight and thickness of the third layer being in the range of 5 to 50% of the total thickness of the P-type photoconductive film, in the order named, and a beam landing layer.

    摘要翻译： 公开了一种图像拾取管靶，其包括形成在透明基板上的N型导电膜和与N型导电膜整流接触的P型光电导膜，并且包括含有As和Se的第一层， 第一层中的As的平均浓度低于8重量％，含有As和Se的第二层，含有As和Se的第三层，As的浓度在8〜20重量％的范围内， 所述第三层为所述P型光电导膜的总厚度的5〜50％的范围，以及束着陆层。

    Image pickup tube target
    10.
    发明授权
    Image pickup tube target 失效
    图像拾取管目标

    公开(公告)号：US4587456A

    公开(公告)日：1986-05-06

    申请号：US571473

    申请日：1984-01-17

    申请人： Eisuke Inoue ,  Yasuhiko Nonaka ,  Masanao Yamamoto

    发明人： Eisuke Inoue ,  Yasuhiko Nonaka ,  Masanao Yamamoto

    IPC分类号： H01J29/45 ,  H01J31/10 ,  H01J31/26

    CPC分类号： H01J29/456

    摘要： An image pickup tube target includes a Se-As-Te photoconductive layer whose arsenic concentration changes in a direction of thickness of the Se-As-Te photoconductive layer, a carrier extraction layer having a high arsenic concentration and being contiguous to the Se-As-Te photoconductive layer, a capacitive layer having a low arsenic concentration and being contiguous to the carrier extraction layer, a doped layer obtained by doping In.sub.2 O.sub.3, MoO.sub.2 or a mixture thereof in an interface between the carrier extraction layer and the capacitive layer.

    摘要翻译： 图像拾取管靶包括Se-As-Te光电导层，其砷浓度在Se-As-Te光电导层的厚度方向上改变，砷浓度高且与Se-As-Te光电导层邻接的载体提取层 -Te光电导层，具有低砷浓度且与载体提取层邻接的电容层，通过在载流子提取层和电容层之间的界面中掺杂In 2 O 3，MoO 2或其混合物而获得的掺杂层。