公开(公告)号：US20110136001A1

公开(公告)日：2011-06-09

申请号：US13058100

申请日：2010-05-27

申请人： Kensuke Nakura ,  Yasunari Sugita

发明人： Kensuke Nakura ,  Yasunari Sugita

IPC分类号： H01M2/02 ,  H01M4/86

CPC分类号： C01G53/62 ,  C01G23/005 ,  C01G45/125 ,  C01G45/1285 ,  C01G49/009 ,  C01G51/62 ,  C01P2002/52 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  Y02T10/7011

摘要： A negative electrode active material which is low-cost and has a high energy density, and a lithium ion secondary battery using such a negative electrode active material are provided. The lithium ion secondary battery uses, as the negative electrode active material, an orthorhombic-system metal composite oxide represented by the formula A2±xB2±yO5±z; (0≦x≦0.1, 0≦y≦0.1, 0≦z≦0.3, A includes at least one element selected from the group consisting of alkaline earths and transition metals except for manganese, and B includes at least manganese), where the formal oxidation number of A is +2, and the formal oxidation number of B is greater than or equal to +2.5 and less than or equal to +3.3.

摘要翻译： 提供低成本，高能量密度的负极活性物质和使用这种负极活性物质的锂离子二次电池。 锂离子二次电池使用由式A2±xB2±yO5±z表示的正交系金属复合氧化物作为负极活性物质， （0＆nlE; x＆nlE; 0.1,0＆nlE; y＆nlE; 0.1,0＆nlE; z＆nlE; 0.3，A包括至少一种选自碱金属和除锰以外的过渡金属的元素，B包括至少锰），其中 A的正式氧化数为+2，B的形式氧​​化数大于或等于+ 2.5且小于或等于+3.3。

公开(公告)号：US20110143192A1

公开(公告)日：2011-06-16

申请号：US13058269

申请日：2010-05-27

申请人： Kensuke Nakura ,  Yasunari Sugita

发明人： Kensuke Nakura ,  Yasunari Sugita

IPC分类号： H01M2/02 ,  H01M4/485

CPC分类号： C01G49/00 ,  C01G23/005 ,  C01G49/0036 ,  C01P2006/40 ,  H01M4/131 ,  H01M4/485 ,  H01M4/525 ,  H01M10/0525 ,  Y02T10/7011

摘要： A negative electrode active material which is low-cost, and has a high energy density, and a lithium ion secondary battery using such a negative electrode active material are provided. The lithium ion secondary battery which is low-cost, and has both a high energy density and high reliability can be obtained by using a negative electrode active material made of metal composite oxide represented by the formula A2±xB2±yO5±z; (1) (0≦x≦0.1, 0≦y≦0.1, 0≦z≦0.3, A includes one selected from the group consisting of strontium, barium, and magnesium, but does not include manganese and calcium, and B includes at least Fe, but does not include manganese), where the formal oxidation number of A is +2, and the formal oxidation number of B is greater than or equal to +2.5 and less than or equal to +3.3.

摘要翻译： 提供低成本，高能量密度的负极活性物质和使用这种负极活性物质的锂离子二次电池。 通过使用由式A2±xB2±yO5±z表示的金属复合氧化物制成的负极活性物质，可以获得低成本，高能量密度和高可靠性的锂离子二次电池， （1）（0＆nlE; x＆nlE; 0.1,0＆nlE; y＆nlE; 0.1,0＆nlE; z＆nlE; 0.3，A包括选自锶，钡和镁的一种，但不包括锰和钙，B包括 最小Fe，但不包括锰），其中A的形式氧化数为+2，B的形式氧​​化数大于或等于+ 2.5且小于或等于+3.3。

公开(公告)号：US07167387B2

公开(公告)日：2007-01-23

申请号：US11061920

申请日：2005-02-22

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Hideaki Adachi ,  Satoshi Yotsuhashi ,  Tsutomu Kanno ,  Kiyoshi Ohnaka

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/1675

摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.

摘要翻译： 本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。 本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

公开(公告)号：US07079361B2

公开(公告)日：2006-07-18

申请号：US11060028

申请日：2005-02-16

申请人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

发明人： Yasunari Sugita ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Mitsuo Satomi ,  Yoshio Kawashima ,  Akihiro Odagawa

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3231 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T428/115

摘要： The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.

摘要翻译： 本发明提供了一种磁阻（MR）元件，它具有优异的MR比和热稳定性，并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层， / SUB>。 这里，M是选自Fe，Co和Ni中的至少一种，X由X 1表示，X 2， （X 1以上）选自Cu，Ru，Rh，Pd，Ag，Os，Ir中的至少一种， Pt和Au，X 2是选自Al，Sc，Ti，V，Cr，Mn，Ga，Ge，Y，Zr，Nb，Mo，Hf，Ta，W，Re中的至少一种 ，Zn和镧系元素，X 3是选自Si，B，C，N，O，P和S中的至少一种），a，b，c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20，a = b + c + d。

公开(公告)号：US06954372B2

公开(公告)日：2005-10-11

申请号：US10250811

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.

摘要翻译： 一种磁存储器件，包括磁阻元件，用于产生改变磁阻元件的电阻值的磁通的导线以及磁通通过的至少一个铁磁部件。 铁磁构件在磁通量通过磁阻元件的位置处形成磁隙。 在与磁隙平行的方向上测量的磁阻元件的长度小于或等于磁隙长度的两倍。 由铁磁部件中的磁通量追踪的路径的长度小于或等于1.0μm。 路径的长度也大于或等于铁磁构件的厚度的五倍和/或大于或等于铁磁构件沿导线方向除以五的长度。

公开(公告)号：US06878979B2

公开(公告)日：2005-04-12

申请号：US10258313

申请日：2002-01-18

申请人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/66 ,  H01L31/119

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F10/3213 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L29/66984

摘要： A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an antiferromagnetic material magnetically coupled to the magnetic semiconductor; and an electrode connected to the magnetic semiconductor via an insulator. A change in the electric potential of the electrode causes the magnetic semiconductor to make a reversible transition between a ferromagnetic state and a paramagnetic state. When the magnetic semiconductor is changed to the ferromagnetic state, the ferromagnetic material is magnetized in a predetermined direction due to the magnetic coupling with the magnetic semiconductor.

摘要翻译： 可以用电压驱动的自旋开关。 该自旋开关包括：铁磁材料; 与铁磁材料磁耦合的磁半导体; 磁耦合到磁性半导体的反铁磁材料; 和通过绝缘体连接到磁性半导体的电极。 电极的电位变化导致磁性半导体在铁磁性状态和顺磁性状态之间产生可逆的转变。 当磁性半导体变为铁磁性状态时，铁磁材料由于与磁性半导体的磁耦合而在预定方向上被磁化。

公开(公告)号：US06608738B2

公开(公告)日：2003-08-19

申请号：US09920309

申请日：2001-08-01

申请人： Hiroshi Sakakima ,  Yasuhiro Kawawake ,  Yasunari Sugita

发明人： Hiroshi Sakakima ,  Yasuhiro Kawawake ,  Yasunari Sugita

IPC分类号： G11B539

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

摘要翻译： 磁阻效应器件包括：其磁化方向容易被外部磁场旋转的自由层; 非磁化层; 以及其磁化方向不容易被外部磁场旋转的被钉扎层，所述被钉扎层设置在与形成有自由层的面相反的非磁化层的面上，所述被钉扎层包括 ：用于交换耦合的第一非磁性膜; 以及通过第一非磁性膜反铁磁交换耦合的第一和第二磁性膜，第一非磁性膜包括Ru，Ir，Rh和Re的氧化物之一。

公开(公告)号：US06597547B1

公开(公告)日：2003-07-22

申请号：US09162300

申请日：1998-09-28

申请人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

发明人： Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita ,  Hiroshi Sakakima

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/10

摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.

摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包括α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。

公开(公告)号：US06258470B1

公开(公告)日：2001-07-10

申请号：US09228703

申请日：1999-01-12

申请人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

发明人： Hiroshi Sakakima ,  Eiichi Hirota ,  Yasuhiro Kawawake ,  Mitsuo Satomi ,  Yasunari Sugita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/32 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121

摘要： An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8

摘要翻译： 本发明的交换耦合膜包括铁磁层和钉扎层，该钉扎层与铁磁层接触以固定铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中：O表示 氧原子; 2.8

公开(公告)号：US20140302366A1

公开(公告)日：2014-10-09

申请号：US14343198

申请日：2012-09-14

申请人： Yasunari Sugita ,  Kazuki Endo ,  Tatsuya Ishibashi ,  Masato Fujikawa

发明人： Yasunari Sugita ,  Kazuki Endo ,  Tatsuya Ishibashi ,  Masato Fujikawa

IPC分类号： H01M2/26 ,  H01M10/0587

CPC分类号： H01M2/263 ,  H01M4/70 ,  H01M10/0587 ,  Y02E60/122

摘要： A nonaqueous electrolyte secondary battery includes: an electrode group including a positive electrode plate, a negative electrode plate, and a separator. The positive and negative electrode plates are wound with the separator interposed therebetween. The positive electrode plate includes a first current collector exposed portion where a portion of the positive electrode current collector corresponding to an outermost portion of the electrode group is exposed over a length of greater than or equal to one turn in a winding direction of the electrode group, and a second current collector exposed portion where a portion of the positive electrode current collector corresponding to a middle portion of the electrode group is exposed over a length of greater than or equal to one turn in the winding direction. A positive electrode lead is provided on the second current collector exposed portion so as to be connected to an external electrode.

摘要翻译： 非水电解质二次电池包括：包括正极板，负极板和隔膜的电极组。 正极板和负极板之间夹有隔膜。 正极板包括：第一集电体露出部，其中对应于电极组的最外部分的正极集电体的一部分在电极组的卷绕方向上暴露在大于或等于一匝的长度上 以及第二集电体露出部，其中与电极组的中间部对应的正极集电体的一部分在卷绕方向上暴露在大于或等于一匝的长度上。 正极引线设置在第二集电体露出部分上，以连接到外部电极。