公开(公告)号：US07973907B2

公开(公告)日：2011-07-05

申请号：US12261596

申请日：2008-10-30

申请人： Kentaro Matsunaga ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

发明人： Kentaro Matsunaga ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

IPC分类号： G03B27/52

CPC分类号： G03F7/16

摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

摘要翻译： 在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。 气氛基本上不含湿气，直到将基板输送到曝光装置。

公开(公告)号：US20090115978A1

公开(公告)日：2009-05-07

申请号：US12261596

申请日：2008-10-30

申请人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

发明人： Kentaro MATSUNAGA ,  Daisuke Kawamura ,  Seiro Miyoshi ,  Eishi Shiobara

IPC分类号： G03F7/38

CPC分类号： G03F7/16

摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.

摘要翻译： 在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。 气氛基本上不含湿气，直到将基板输送到曝光装置。

公开(公告)号：US20100304568A1

公开(公告)日：2010-12-02

申请号：US12752684

申请日：2010-04-01

申请人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

发明人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

IPC分类号： H01L21/302 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/095 ,  H01L21/0274 ,  H01L21/31144

摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

摘要翻译： 图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度， 通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置， 以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。

公开(公告)号：US07794923B2

公开(公告)日：2010-09-14

申请号：US11654565

申请日：2007-01-18

申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

IPC分类号： G03F7/00

CPC分类号： G03F7/70341 ,  Y10S430/162

摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

公开(公告)号：US20070190462A1

公开(公告)日：2007-08-16

申请号：US11654565

申请日：2007-01-18

申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

IPC分类号： G03F7/20

CPC分类号： G03F7/70341 ,  Y10S430/162

摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

公开(公告)号：US20090226624A1

公开(公告)日：2009-09-10

申请号：US12466525

申请日：2009-05-15

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05D1/02 ,  B05B7/00 ,  B05B13/04 ,  B05C5/00 ,  B05B15/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US20090123878A1

公开(公告)日：2009-05-14

申请号：US12256240

申请日：2008-10-22

申请人： Seiro MIYOSHI ,  Eishi Shiobara

发明人： Seiro MIYOSHI ,  Eishi Shiobara

IPC分类号： G03F7/20

CPC分类号： H01L21/31144 ,  G03F7/11 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/28017 ,  H01L21/32139

摘要： A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.

摘要翻译： 图案化方法包括：在工件基板上形成第一膜; 在第一膜上形成第二膜，第二膜是相对于第一膜的EUV（极紫外）光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

公开(公告)号：US07779777B2

公开(公告)日：2010-08-24

申请号：US12466525

申请日：2009-05-15

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05B15/02 ,  B05B3/00 ,  B05B1/28 ,  B05B13/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US20070266936A1

公开(公告)日：2007-11-22

申请号：US11798132

申请日：2007-05-10

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05C11/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。