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132 条记录 (耗时 0.034 秒)

    Heat-resistant fabric and method for production thereof
    3.
    发明授权
    Heat-resistant fabric and method for production thereof 失效
    耐热织物及其制造方法

    公开(公告)号：US06844275B2

    公开(公告)日：2005-01-18

    申请号：US10111204

    申请日：2001-09-03

    申请人： Hideyuki Yamamoto ,  Makoto Nakahara

    发明人： Hideyuki Yamamoto ,  Makoto Nakahara

    IPC分类号： B01D39/16 ,  B01D39/20 ,  D04H1/42 ,  D04H1/64 ,  B32B27/12 ,  B32B27/04

    CPC分类号： D04H1/64 ,  B01D39/163 ,  B01D39/202 ,  D04H1/4218 ,  D04H1/4318 ,  D04H1/4342 ,  D04H1/587 ,  Y10S428/92 ,  Y10S428/921 ,  Y10T428/13 ,  Y10T442/2631 ,  Y10T442/2861 ,  Y10T442/60 ,  Y10T442/696

    摘要： The object of this invention is to provide a heat resistant fabric having high stiffness at high temperature and also high chemicals resistance.The heat resistant fabric of this invention is a fabric consisting of heat resistant fibers, characterized in that the contacts between the fibers constituting the fabric are bound by means of an inorganic binder. Furthermore, a preferable process for preparing the heat resistant fabric of this invention comprises the steps of impregnating a fabric consisting of heat resistant fibers with a sodium silicate aqueous solution, and drying in an atmosphere containing carbon dioxide, to bind the contacts between the fibers constituting the fabric by means of silicon oxide.

    摘要翻译： 本发明的目的是提供一种在高温下具有高刚度并且具有高耐化学性的耐热织物。本发明的耐热织物是由耐热纤维组成的织物，其特征在于，构成纤维的纤维之间的接触 织物通过无机粘合剂结合。 此外，制备本发明的耐热织物的优选方法包括以下步骤：将由耐热纤维组成的织物用硅酸钠水溶液浸渍，并在含有二氧化碳的气氛中干燥，使构成的纤维之间的接触 织物通过氧化硅。

    Substrate processing apparatus
    5.
    发明申请
    Substrate processing apparatus 失效
    基板加工装置

    公开(公告)号：US20090139656A1

    公开(公告)日：2009-06-04

    申请号：US12292947

    申请日：2008-12-01

    申请人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

    发明人： Koukichi Hiroshiro ,  Hideyuki Yamamoto ,  Kazuhiro Takeshita ,  Takayuki Toshima

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67057

    摘要： The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.

    摘要翻译： 本发明提供一种基板处理装置，用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备：处理槽，具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给，从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体，位于主体上方的突出部分和位于最上方的排出引导部分，并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比，突出部包括位于宽度方向上更接近中央部的内端部。

    Disturbance-Free, Recipe-Controlled Plasma Processing System And Method
    6.
    发明申请
    Disturbance-Free, Recipe-Controlled Plasma Processing System And Method 审中-公开
    无干扰，配方控制的等离子体处理系统和方法

    公开(公告)号：US20090120580A1

    公开(公告)日：2009-05-14

    申请号：US12351159

    申请日：2009-01-09

    申请人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    发明人： Akira Kagoshima ,  Hideyuki Yamamoto ,  Shoji Ikuhara ,  Toshio Masuda ,  Hiroyuki Kitsunai ,  Junichi Tanaka ,  Natsuyo Morioka ,  Kenji Tamaki

    IPC分类号： C23F1/08

    CPC分类号： H01L22/20 ,  G05B19/41875 ,  G05B2219/45031 ,  H01J37/32935 ,  H01L22/26 ,  Y02P90/20 ,  Y02P90/22

    摘要： A plasma processing apparatus includes a vacuum processing apparatus for performing a multi-step processing operation for a sample, a sensor for monitoring process parameters during at least a first step of the processing operation, a signal compression unit for compressing a signal from the sensor to generate an apparatus state signal, a worked result estimate model unit which estimates a processed result on the basis of the apparatus state signal and a set processed-result estimation equation, an optimum recipe calculation model unit which calculates corrections to processing conditions so that the processed result becomes a target value, a usable recipe selecting unit which judges validity of an optimum recipe. At a next step of the processing operation, sample processing is performed under optimum conditions on the basis of the usable recipe selected by the selected usable recipe.

    摘要翻译： 等离子体处理装置包括用于对样品进行多步骤处理操作的真空处理装置，用于在处理操作的至少第一步骤中监视处理参数的传感器，用于将来自传感器的信号压缩到 生成装置状态信号，工作结果估计模型单元，其基于装置状态信号和设定的处理结果估计方程估计处理结果;最佳配方计算模型单元，其计算对处理条件的校正，使得处理 结果成为目标值，判定最佳配方的有效性的可用配方选择单元。 在处理操作的下一步骤中，基于由所选择的可用食谱选择的可用食谱，在最佳条件下进行样品处理。

    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus
    8.
    发明授权
    Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus 失效
    蚀刻装置，自偏压测定方法以及蚀刻装置的监视方法

    公开(公告)号：US07330346B2

    公开(公告)日：2008-02-12

    申请号：US11506791

    申请日：2006-08-21

    申请人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    发明人： Shoji Ikuhara ,  Hideyuki Yamamoto ,  Daisuke Shiraishi ,  Akira Kagoshima

    IPC分类号： H02N13/00

    CPC分类号： H01L21/6833 ,  H02N13/00

    摘要： The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism 1 and 10 for chucking a sample 2, a mechanism 13 and 14 for supplying cooling gas 12 to a rear surface of the sample 2 and controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the sample 2 being processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the sample 2 when high-frequency bias power is applied to the sample 2 being processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.

    摘要翻译： 本发明提供了一种用于通过简单的过程在任意蚀刻条件下估计自偏压的装置。 本发明提供了一种用于测量蚀刻装置的自偏压的方法，该蚀刻装置包括用于夹持样品2的静电卡盘机构1和10，用于将冷却气体12供应到样品2的后表面的机构13和14，并且控制 其压力，以及用于根据正在处理的样品2的背面压力控制状态来测量样品的静电卡盘的相对力的装置，其中样品的静电卡盘的相对力和对应于 当对待处理的样品2施加高频偏置功率时，基于样品2的背面压力控制获取静电卡盘的力，并且将样品的静电卡盘与静电卡盘电压的相对力对应于 当高频时，基于样品的背面压力控制状态获取静电卡盘的力 cy偏压功率不会被施加到正在处理的样品，并且使用所获取的静电卡盘的力和对应于两种状态的静电卡盘电压来估计自偏压。

    AF control apparatus for zoom lens system
    9.
    发明授权
    AF control apparatus for zoom lens system 失效
    用于变焦镜头系统的AF控制装置

    公开(公告)号：US07277237B2

    公开(公告)日：2007-10-02

    申请号：US11121014

    申请日：2005-05-04

    申请人： Noboru Saito ,  Takamitsu Sasaki ,  Hideyuki Yamamoto

    发明人： Noboru Saito ,  Takamitsu Sasaki ,  Hideyuki Yamamoto

    IPC分类号： G02B15/14 ,  G03B17/00

    CPC分类号： G02B7/36 ,  G02B7/102 ,  G02B7/282

    摘要： An AF control apparatus for a zoom lens system includes a movable lens group serving as a zooming lens group and a focusing lens group in the zoom lens system; a focusing table which stores focusing data for the movable lens group; a zooming table which stores zooming data for the movable lens group, the zooming table having different data from the focusing table; and a driving device for moving the movable lens group in an optical axis direction of the zoom lens system according to data stored in the focusing table and the zooming table.

    摘要翻译： 用于变焦透镜系统的AF控制装置包括在变焦透镜系统中用作变焦透镜组和聚焦透镜组的可移动透镜组; 存储可移动透镜组的聚焦数据的聚焦表; 存储用于可移动透镜组的缩放数据的变焦表，该缩放表具有与聚焦表不同的数据; 以及驱动装置，用于根据存储在聚焦表和变焦表中的数据，使可变透镜组沿变焦透镜系统的光轴方向移动。