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公开(公告)号：US06262464B1
公开(公告)日：2001-07-17
申请号：US09596725
申请日：2000-06-19
IPC分类号： H01L2714
CPC分类号： H03H3/0072 , H03H9/1057 , H03H9/2463 , H03H9/465
摘要： Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electro-mechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.
摘要翻译： 使用封装的微机电系统（MEMS）装置的通信信号混合和滤波系统和方法。 此外，公开了一种制造简单的，单一构造的微机电系统（MEMS）装置的方法，该微机电系统（MEMS）装置结合了信号混合和滤波的步骤，并且其结构和操作比目前的装置更小，更便宜和更可靠 在技术上受雇。
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2.发明授权Encapsulated MEMS band-pass filter for integrated circuits and method of fabrication thereof 失效用于集成电路的封装的MEMS带通滤波器及其制造方法公开(公告)号：US06399406B2
公开(公告)日：2002-06-04
申请号：US09840264
申请日：2001-04-23
IPC分类号： H01L2100
CPC分类号： H03H3/0072 , H03H9/1057 , H03H9/2463 , H03H9/465
摘要： Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electromechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.
摘要翻译： 使用封装的微机电系统（MEMS）装置的通信信号混合和滤波系统和方法。 此外，公开了一种制造简单，单一构造的微机电系统（MEMS）装置的方法，其组合了信号混合和滤波的步骤，并且其结构和操作更小，更便宜和更可靠，与目前在 技术。
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3.发明授权Method for constructing an encapsulated MEMS band-pass filter for integrated circuits 失效用于构建用于集成电路的封装的MEMS带通滤波器的方法公开(公告)号：US06429755B2
公开(公告)日：2002-08-06
申请号：US09772459
申请日：2001-01-30
IPC分类号： H03H924
CPC分类号： H03H3/0072 , H03H3/0073 , H03H9/02409 , H03H9/1057 , H03H9/462 , H03H2009/02511
摘要： Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
摘要翻译： 用于以与当前集成电路处理兼容的方式构造新型MEMS器件，特别是带通滤波器谐振器的集成电路制造技术，并且被完全封装以优化性能并消除环境腐蚀。 最终的器件可以由单晶硅构成，消除了与使用多晶或非晶材料相关的机械问题。 然而，其他材料可以用于谐振器。 最终的MEMS器件位于衬底表面之下，能够进一步处理集成电路，而不会有突出的结构。 MEMS器件大约是SRAM单元的尺寸，并且可以容易地并入到现有的集成电路芯片中。 可以使用与集成电路兼容的电压和电流进行后处理或电子控制来改变器件的固有频率。
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公开(公告)号：US06275122B1
公开(公告)日：2001-08-14
申请号：US09375942
申请日：1999-08-17
IPC分类号： H03H946
CPC分类号： H03H3/0072 , H03H3/0073 , H03H9/02409 , H03H9/1057 , H03H9/462 , H03H2009/02511
摘要： Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
摘要翻译： 用于以与当前集成电路处理兼容的方式构造新型MEMS器件，特别是带通滤波器谐振器的集成电路制造技术，并且被完全封装以优化性能并消除环境腐蚀。 最终的器件可以由单晶硅构成，消除了与使用多晶或非晶材料相关的机械问题。 然而，其他材料可以用于谐振器。 最终的MEMS器件位于衬底表面之下，能够进一步处理集成电路，而不会有突出的结构。 MEMS器件大约是SRAM单元的尺寸，并且可以容易地并入到现有的集成电路芯片中。 可以使用与集成电路兼容的电压和电流进行后处理或电子控制来改变器件的固有频率。
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公开(公告)号：US4111720A
公开(公告)日：1978-09-05
申请号：US783245
申请日：1977-03-31
IPC分类号： H01L27/08 , H01L21/265 , H01L21/331 , H01L21/74 , H01L21/76 , H01L29/36 , H01L29/73 , H01L21/26
CPC分类号： H01L21/74 , H01L21/2652 , H01L29/36
摘要： A method for forming a non-epitaxial bipolar integrated circuit comprising first forming in a silicon substrate of one-type of conductivity, recessed silicon dioxide regions extending into the substrate and laterally enclosing at least one silicon substrate region of said one-type conductivity. Then, forming by ion implantation the first region of opposite-type conductivity which is fully enclosed laterally by said recessed silicon dioxide. This region is formed by directing a beam of ions of opposite-type conductivity impurity at said enclosed silicon region at such energy and dosage levels that the opposite conductivity-type impurity introduced into the substrate in said region will have a concentration peak at a point below the surface of this first region. Then, a region of said one-type conductivity is formed which extends from the surface into said first opposite-type conductivity region to a point between said concentration peak and said surface. Next, a second region of said opposite-type conductivity is formed which extends from the surface part way into said region of one-type conductivity.Preferably, the ion beam energy level is at least one MeV, and said concentration peak is at least one micron below the surface. It is further preferable that the energy and dosage levels of the beam of ions are selected so that the opposite-type conductivity impurity has a more gradual distribution gradient between the peak and the surface than between the peak and the junction of the first region with the substrate.
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公开(公告)号：US06391674B1
公开(公告)日：2002-05-21
申请号：US09752571
申请日：2000-12-28
申请人： James F. Ziegler
发明人： James F. Ziegler
IPC分类号： H01L2100
摘要： This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
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7.发明授权Filter circuit including system for tuning resonant structures to change resonant frequencies thereof 有权滤波器电路包括用于调谐谐振结构以改变其谐振频率的系统公开(公告)号：US06348846B1
公开(公告)日：2002-02-19
申请号：US09417894
申请日：1999-10-14
IPC分类号： H03H922
摘要： A structure (and method) for tuning a resonant structure, includes a resonant structure including either a predetermined material coating provided on either a bar or a cantilever, or a lightly doped single crystal semiconductor material, and a circuit for providing a variable field adjacent the resonant structure, with the length or at least one of the elastic constants of the resonant structure changing with the application of the variable magnetic or electric field, respectively, thereby to selectively tune the resonant structure.
摘要翻译： 用于调谐谐振结构的结构（和方法）包括谐振结构，其包括设置在棒上或悬臂上的预定材料涂层或者轻掺杂单晶半导体材料，以及用于提供相邻的可变场的电路 谐振结构，谐振结构的弹性常数的长度或至少一个分别随着可变磁场或电场的应用而变化，从而选择性地调谐共振结构。
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公开(公告)号：US06337627B1
公开(公告)日：2002-01-08
申请号：US09699183
申请日：2000-10-27
申请人： Robert J. Von Gutfeld , James F. Ziegler , Scott J. McAllister , James H. Anderson , John C. Murphy , Matthias D. Ziegler
发明人： Robert J. Von Gutfeld , James F. Ziegler , Scott J. McAllister , James H. Anderson , John C. Murphy , Matthias D. Ziegler
IPC分类号： G08B1314
摘要： The invention describes methods for locating a treatment device disposed within a living body by means of magnetic fields that are produced by Barkhausen jumps, principally from amorphous tag wires with high permeability that exhibit reentrant flux reversal. When wires of this type are attached to concealed treatment devices such as catheters, interrogation or scanning of the tag wire by a low frequency ac magnetic field affords an accurate means for locating the treatment devices using a sensor coil to detect the magnetic field signal from the wire locating tag. The strength of the field detected by the position of a sensor coil with respect to the locator tag is used to determine the location of the tag. A favorable signal to noise detection ration is obtained as the signal emitted by the wire is at a very high frequency compared to that of the frequency of the interrogation field.
摘要翻译： 本发明描述了通过由Barkhausen跳跃产生的磁场来定位设置在生物体内的治疗装置的方法，主要是来自呈现出可重入通量反转的高磁导率的非晶标签线。 当这种类型的导线连接到诸如导管的隐蔽处理装置时，通过低频交流磁场对标签线的询问或扫描提供了使用传感器线圈来定位处理装置的精确装置，以检测来自 电线定位标签。 使用传感器线圈相对于定位器标签的位置检测的场强度来确定标签的位置。 获得有利的信噪比检测比例，因为与线询问频率相比，由线发出的信号处于非常高的频率。
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9.发明授权Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays 失效用于通过计数发射的X射线来监测注入到靶中的离子的剂量的方法和装置
公开(公告)号：US4110625A
公开(公告)日：1978-08-29
申请号：US752779
申请日：1976-12-20
申请人： James A. Cainns , Allen Lurio , James F. Ziegler
发明人： James A. Cainns , Allen Lurio , James F. Ziegler
IPC分类号： B23K15/00 , G01N23/225 , H01J37/244 , H01J37/317 , H01L21/265 , A61K27/02
CPC分类号： H01J37/244 , G01N23/225 , H01J37/3171 , H01J2237/2444 , H01J2237/24507
摘要： Practice of this disclosure obtains a measure of the dose or fluence of implanted ions into a target for device fabrication by monitoring emitted X-rays. Illustratively, ion beams of B.sup.+, P.sup.+ or As.sup.+ have been implanted into Si over the ion energy range of 20 KeV to 2800 KeV and the data of counts of emitted X-rays has been correlated with both the solid angle intercepted by the counter and the charge intercepted by the target. In particular, the low energy soft Si(L) X-rays at 136A have been discovered for the practice of this disclosure to be very intense. The principles of this disclosure are especially applicable for very low ion doses, i.e. .ltorsim. 10.sup.12 /cm.sup.2 where charge integration is not feasible; and for neutral beam implantation with currents above about 2 milliamperes. Reproducible semiconductor devices can be fabricated by practice of this disclosure, i.e., with substantially reproducible operational characteristics, e.g., bipolar and field-effect transistors with silicon integrated circuit technology.
摘要翻译： 本公开的实践通过监测发射的X射线获得了注入离子到装置制造目标中的剂量或注量的量度。 说明性地，在20KeV至2800KeV的离子能量范围内已经将B +，P +或As +的离子束注入到Si中，并且所发射的X射线的计数数据与由计数器截取的立体角和 目标截获的费用。 特别地，已经发现136A处的低能量软Si（L）X射线是非常强烈的。 本公开的原理尤其适用于非常低的离子剂量，即不含电荷积分的APPROXLESS 1012 / cm 2; 并且用于高于约2毫安的电流的中性束注入。 可以通过本公开的实践来制造可再生半导体器件，即具有基本上可再现的操作特性，例如具有硅集成电路技术的双极和场效应晶体管。
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公开(公告)号：US06238946B1
公开(公告)日：2001-05-29
申请号：US09375940
申请日：1999-08-17
申请人： James F. Ziegler
发明人： James F. Ziegler
IPC分类号： H01L2100
CPC分类号： H03H3/0072 , B81B2201/0271 , B81C1/00246 , B81C2203/0735 , H03H9/2457 , H03H9/2463
摘要： This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
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