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公开(公告)号：US06262464B1
公开(公告)日：2001-07-17
申请号：US09596725
申请日：2000-06-19
IPC分类号： H01L2714
CPC分类号： H03H3/0072 , H03H9/1057 , H03H9/2463 , H03H9/465
摘要： Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electro-mechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.
摘要翻译： 使用封装的微机电系统（MEMS）装置的通信信号混合和滤波系统和方法。 此外，公开了一种制造简单的，单一构造的微机电系统（MEMS）装置的方法，该微机电系统（MEMS）装置结合了信号混合和滤波的步骤，并且其结构和操作比目前的装置更小，更便宜和更可靠 在技术上受雇。
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2.发明授权Encapsulated MEMS band-pass filter for integrated circuits and method of fabrication thereof 失效用于集成电路的封装的MEMS带通滤波器及其制造方法公开(公告)号：US06399406B2
公开(公告)日：2002-06-04
申请号：US09840264
申请日：2001-04-23
IPC分类号： H01L2100
CPC分类号： H03H3/0072 , H03H9/1057 , H03H9/2463 , H03H9/465
摘要： Communication signal mixing and filtering systems and methods utilizing an encapsulated micro electro-mechanical system (MEMS) device. Furthermore, disclosed is a method of fabricating a simple, unitarily constructed micro electromechanical system (MEMS) device which combines the steps of signal mixing and filtering, and which is smaller, less expensive and more reliable in construction and operation than existing devices currently employed in the technology.
摘要翻译： 使用封装的微机电系统（MEMS）装置的通信信号混合和滤波系统和方法。 此外，公开了一种制造简单，单一构造的微机电系统（MEMS）装置的方法，其组合了信号混合和滤波的步骤，并且其结构和操作更小，更便宜和更可靠，与目前在 技术。
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3.发明授权Method for constructing an encapsulated MEMS band-pass filter for integrated circuits 失效用于构建用于集成电路的封装的MEMS带通滤波器的方法公开(公告)号：US06429755B2
公开(公告)日：2002-08-06
申请号：US09772459
申请日：2001-01-30
IPC分类号： H03H924
CPC分类号： H03H3/0072 , H03H3/0073 , H03H9/02409 , H03H9/1057 , H03H9/462 , H03H2009/02511
摘要： Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
摘要翻译： 用于以与当前集成电路处理兼容的方式构造新型MEMS器件，特别是带通滤波器谐振器的集成电路制造技术，并且被完全封装以优化性能并消除环境腐蚀。 最终的器件可以由单晶硅构成，消除了与使用多晶或非晶材料相关的机械问题。 然而，其他材料可以用于谐振器。 最终的MEMS器件位于衬底表面之下，能够进一步处理集成电路，而不会有突出的结构。 MEMS器件大约是SRAM单元的尺寸，并且可以容易地并入到现有的集成电路芯片中。 可以使用与集成电路兼容的电压和电流进行后处理或电子控制来改变器件的固有频率。
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公开(公告)号：US06275122B1
公开(公告)日：2001-08-14
申请号：US09375942
申请日：1999-08-17
IPC分类号： H03H946
CPC分类号： H03H3/0072 , H03H3/0073 , H03H9/02409 , H03H9/1057 , H03H9/462 , H03H2009/02511
摘要： Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
摘要翻译： 用于以与当前集成电路处理兼容的方式构造新型MEMS器件，特别是带通滤波器谐振器的集成电路制造技术，并且被完全封装以优化性能并消除环境腐蚀。 最终的器件可以由单晶硅构成，消除了与使用多晶或非晶材料相关的机械问题。 然而，其他材料可以用于谐振器。 最终的MEMS器件位于衬底表面之下，能够进一步处理集成电路，而不会有突出的结构。 MEMS器件大约是SRAM单元的尺寸，并且可以容易地并入到现有的集成电路芯片中。 可以使用与集成电路兼容的电压和电流进行后处理或电子控制来改变器件的固有频率。
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公开(公告)号：US07784673B2
公开(公告)日：2010-08-31
申请号：US12189388
申请日：2008-08-11
CPC分类号： B23K3/0638 , B23K35/02 , B23K2101/40 , H01L2224/11
摘要： A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
摘要翻译： 公开了一种用于将导电接合材料注射成非矩形模具中的多个空腔的系统和方法。 该方法包括将填充头与非矩形模具对准。 非矩形模具包括多个空腔。 填充头被放置成与非矩形模具基本接触。 旋转运动提供给非矩形模具和填充头中的至少一个，同时填充头基本上与非矩形模具接触。 将导电接合材料从填充头推向非矩形模具。 导电接合材料被提供到与填充头附近的至少一个空腔同时的多个空腔的至少一个空腔中。
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公开(公告)号：US20080302502A1
公开(公告)日：2008-12-11
申请号：US12189822
申请日：2008-08-12
IPC分类号： B22D17/00
CPC分类号： B23K3/0638 , B23K1/20 , B23K2101/40 , H01L24/11 , H01L24/742 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01027 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00
摘要： A system, method, and apparatus for injection molding conductive bonding material into a plurality of cavities in a surface are disclosed. The method comprises aligning a fill head with a surface. The mold includes a plurality of cavities. The method further includes placing the fill head in substantial contact with the surface. At least a first gas is channeled about a first region of the fill head. The at least first gas has a temperature above a melting point of conductive bonding material residing in a reservoir thereby maintaining the conductive bonding material in a molten state. The conductive bonding material is forced out of the fill head toward the surface. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
摘要翻译： 公开了一种用于将导电接合材料注射成表面中的多个空腔的系统，方法和装置。 该方法包括将填充头与表面对准。 模具包括多个空腔。 该方法还包括将填充头与表面实质接触。 至少第一气体围绕填充头的第一区域引导。 所述至少第一气体具有高于位于储存器中的导电接合材料的熔点的温度，从而将导电接合材料保持在熔融状态。 导电接合材料从表面压出填料头。 导电接合材料被提供到与填充头附近的至少一个空腔同时的多个空腔的至少一个空腔中。
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公开(公告)号：US5321886A
公开(公告)日：1994-06-21
申请号：US68037
申请日：1993-05-28
IPC分类号： H01L23/12 , G02F1/13 , H01L21/768 , H05K3/00 , H05K3/02 , H05K3/20 , H05K3/22 , H05K3/28 , H05K3/46
CPC分类号： H05K3/225 , H01L21/76886 , G02F1/1309 , H05K2201/0394 , H05K2201/1028 , H05K2203/0769 , H05K2203/107 , H05K2203/173 , H05K3/0017 , H05K3/027 , H05K3/20 , H05K3/28 , Y10T29/49124 , Y10T29/49155 , Y10T29/49742
摘要： A conductive line is applied to a substrate by aligning the conductive line in juxtaposition with a selected area of the substrate; bonding the conductive line to the substrate; and detaching the conductive line from a carrier in which the conductive line is suspended. The carrier has a carrier opening defined by sidewalls, and conductive material is suspended by the sidewalls of the carrier opening so as to be embedded within the carrier opening, and form the conductive line.
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公开(公告)号：US07410092B2
公开(公告)日：2008-08-12
申请号：US11409233
申请日：2006-04-21
IPC分类号： B23K31/02
CPC分类号： B23K3/0638 , B23K1/20 , B23K2101/40 , H01L24/11 , H01L24/742 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01027 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00
摘要： A system, method, and apparatus for injection molding conductive bonding material into a plurality of cavities in a surface are disclosed. The method comprises aligning a fill head with a surface. The mold includes a plurality of cavities. The method further includes placing the fill head in substantial contact with the surface. At least a first gas is channeled about a first region of the fill head. The at least first gas has a temperature above a melting point of conductive bonding material residing in a reservoir thereby maintaining the conductive bonding material in a molten state. The conductive bonding material is forced out of the fill head toward the surface. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
摘要翻译： 公开了一种用于将导电接合材料注射成表面中的多个空腔的系统，方法和装置。 该方法包括将填充头与表面对准。 模具包括多个空腔。 该方法还包括将填充头与表面实质接触。 至少第一气体围绕填充头的第一区域引导。 所述至少第一气体具有高于位于储存器中的导电接合材料的熔点的温度，从而将导电接合材料保持在熔融状态。 导电接合材料从表面压出填料头。 导电接合材料被提供到与填充头附近的至少一个空腔同时的多个空腔的至少一个空腔中。
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9.发明授权
公开(公告)号：US6020946A
公开(公告)日：2000-02-01
申请号：US28018
申请日：1998-02-23
申请人： Alessandro Cesare Callegari , Praveen Chaudhari , James Patrick Doyle , James Andrew Lacey , Shui-Chin Alan Lien , Sampath Purushothaman , Mahesh Govind Samant , James L. Speidell , Joachim Stohr
发明人： Alessandro Cesare Callegari , Praveen Chaudhari , James Patrick Doyle , James Andrew Lacey , Shui-Chin Alan Lien , Sampath Purushothaman , Mahesh Govind Samant , James L. Speidell , Joachim Stohr
IPC分类号： G02F1/1337 , C07C1/00
CPC分类号： G02F1/13378 , G02F1/133734 , G02F2001/133765
摘要： The present invention is a method for forming a liquid-crystal cell of a liquid-crystal display. Initially, a dry processed alignment film is deposited onto a first transparent substrate using a dry processing technique, such as plasma enhanced chemical vapor deposition (PECVD). The dry processed alignment film is then irradiated with a beam of atoms to arrange the atomic structure of the alignment film in at least one desired direction in order to orient the liquid-crystal molecules. Another dry processed alignment film is deposited on a second substrate using a dry processing technique and, likewise, irradiated with a beam of atoms. The first transparent substrate and the second substrate are then sandwiched together with their respective alignment films spaced adjacent to each other. The space between the films is then filled with a liquid-crystal material.
摘要翻译： 本发明是一种形成液晶显示器的液晶元件的方法。 首先，使用诸如等离子体增强化学气相沉积（PECVD）的干法处理技术将干燥处理的取向膜沉积到第一透明基板上。 然后用原子束照射干燥处理的取向膜，以将取向膜的原子结构设置在至少一个所需方向上，以便使液晶分子取向。 使用干法处理技术将另一干燥处理的取向膜沉积在第二基板上，并且同样用原子束照射。 然后将第一透明基板和第二基板夹在一起，并将它们各自的定向膜彼此间隔开。 然后用液晶材料填充膜之间的空间。
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公开(公告)号：US5756236A
公开(公告)日：1998-05-26
申请号：US789905
申请日：1997-01-29
CPC分类号： B23K26/06
摘要： A method of fabricating a high resolution ablation mask for use at laser fluences of greater than 200 mJ/cm.sup.2 is disclosed. The method comprises combining dry etching and chemical etching of an unetched ablation mask which comprises a transparent substrate, a layer of high UV light refractivity material, e.g. aluminum, deposited on said substrate, and a photoresist layer positioned on a predetermined area of said high UV light refractivity material layer leaving other areas of said high UV light refractivity material layer exposed.
摘要翻译： 公开了一种在大于200mJ / cm 2的激光能量密度下制造高分辨率消融掩模的方法。 该方法包括组合干蚀刻和未蚀刻消融掩模的化学蚀刻，其包括透明衬底，高UV光折射材料层， 铝，沉积在所述衬底上，以及光致抗蚀剂层，其定位在所述高UV光折射率材料层的预定区域上，留下所述高UV光折射率材料层的其它区域暴露。
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