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公开(公告)号：US06784430B2
公开(公告)日：2004-08-31
申请号：US10277940
申请日：2002-10-23
IPC分类号： H01L2714
CPC分类号： G01J5/0014 , G01J1/0488 , G01J1/42 , G01J5/602 , H04M3/382 , H04M3/42314 , H04M3/4234
摘要： A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.
摘要翻译： 用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。 光谱仪包括传感器，系统包括传感器。 一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。 一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。
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2.发明授权Detection system including avalanche photodiode for use in harsh environments 失效检测系统包括用于恶劣环境的雪崩光电二极管公开(公告)号：US07002156B2
公开(公告)日：2006-02-21
申请号：US10994980
申请日：2004-11-19
IPC分类号： G01J1/24
CPC分类号： H01L31/02322 , H01L31/02161 , H01L31/03044 , H01L31/0312 , H01L31/035281 , H01L31/107 , H01L31/115
摘要： A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.
摘要翻译： 一种用于检测伽马射线的检测系统，包括用于接收至少一个伽马射线并产生至少一个紫外线的闪烁体晶体和用于检测紫外线的雪崩光电二极管。 雪崩光电二极管包括：具有第一掺杂剂的衬底; 具有位于所述基板顶部上的具有第二掺杂剂的第一层; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第一层之上; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第一层之上。 雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁。
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公开(公告)号：US06838741B2
公开(公告)日：2005-01-04
申请号：US10314986
申请日：2002-12-10
IPC分类号： G01J1/02 , H01J20060101 , H01L31/0232 , H01L31/0248 , H01L31/0304 , H01L31/0312 , H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/107 , H01L31/113 , H01L31/115
CPC分类号： H01L31/02322 , H01L31/02161 , H01L31/03044 , H01L31/0312 , H01L31/035281 , H01L31/107 , H01L31/115
摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.
摘要翻译： 本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。 本发明的另一方面涉及使用GaN材料制造的APD器件。 根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。
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