利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.018 秒)

    Method for fabricating silicon carbide vertical MOSFET devices
    1.
    发明授权
    Method for fabricating silicon carbide vertical MOSFET devices 有权
    制造碳化硅垂直MOSFET器件的方法

    公开(公告)号：US07595241B2

    公开(公告)日：2009-09-29

    申请号：US11466488

    申请日：2006-08-23

    申请人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    发明人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

    摘要翻译： 形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。 欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。 在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。 第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面 漂移层基板。

    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
    2.
    发明申请
    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES 审中-公开
    制造碳化硅垂直MOSFET器件的方法

    公开(公告)号：US20090267141A1

    公开(公告)日：2009-10-29

    申请号：US12498630

    申请日：2009-07-07

    申请人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    发明人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    IPC分类号： H01L29/78 ,  H01L21/22

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

    摘要翻译： 形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。 欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。 在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。 第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面 漂移层基板。

    MOSFET devices and methods of fabrication
    3.
    发明申请
    MOSFET devices and methods of fabrication 审中-公开
    MOSFET器件和制造方法

    公开(公告)号：US20080142811A1

    公开(公告)日：2008-06-19

    申请号：US11637991

    申请日：2006-12-13

    申请人： Kevin Sean Matocha ,  Larry Burton Rowland

    发明人： Kevin Sean Matocha ,  Larry Burton Rowland

    IPC分类号： H01L29/24 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66712

    摘要： A vertical MOSFET is disclosed. The MOSFET includes a gate dielectric region, a drift region having a drift region dopant concentration profile of a first conductivity type, and a JFET region having a JFET region dopant concentration profile of the first conductivity type adjacent to the gate dielectric region and disposed over the drift region. The JFET region dopant concentration profile is different from the drift region dopant concentration profile. A method for fabricating a vertical MOSFET is also disclosed.

    摘要翻译： 公开了一种垂直MOSFET。 MOSFET包括栅极电介质区域，具有第一导电类型的漂移区掺杂浓度分布的漂移区域和具有与栅介电区域相邻的第一导电类型的JFET区掺杂浓度分布的JFET区域， 漂移区。 JFET区掺杂剂浓度分布与漂移区掺杂浓度分布不同。 还公开了一种用于制造垂直MOSFET的方法。

    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
    4.
    发明申请
    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES 有权
    制造碳化硅垂直MOSFET器件的方法

    公开(公告)号：US20080050876A1

    公开(公告)日：2008-02-28

    申请号：US11466488

    申请日：2006-08-23

    申请人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    发明人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

    摘要翻译： 形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。 欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。 在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。 第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面 漂移层基板。