公开(公告)号：US10041172B2

公开(公告)日：2018-08-07

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/44 ,  C23C16/455

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US20160060759A1

公开(公告)日：2016-03-03

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

摘要翻译： 一种气体注入装置，其可以在容器中顺序地供给具有彼此反应的至少两种源气体的基板和包括该气体注入装置的薄膜沉积设备。 气体注入装置包括基板，从基板突出的第一气体供应区域，从基板突出并邻近第一气体供应区域的第二气体供应区域和由第一气体供应源的侧壁限定的沟槽 区域和第二气体供应区域的侧壁。 第一气体供给区域的侧壁和第二气体供给区域的侧壁彼此面对并且在基板上沿径向方向延伸。

公开(公告)号：US08366827B2

公开(公告)日：2013-02-05

申请号：US11447933

申请日：2006-06-07

申请人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Chul Kwun

发明人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Chul Kwun

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68721 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45591 ,  Y10T29/41

摘要： Disclosed are chamber inserts and apparatuses using the chamber inserts. A chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion.

摘要翻译： 公开了使用腔室插入件的腔室插入件和装置。 腔室插入件可以包括包括顶端部分和底端部分的圆柱形主体部分，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱形主体部分周向定位的第一部分和第二突出部分 该部分从圆柱形主体部分的第二部分向外延伸，第二部分沿着比圆柱形主体部分的全部圆周方向定位。 在另一示例中，腔室插入件可以包括包括顶端部分和底端部分的圆柱体部分，该圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和至少一个孔沿着圆柱形 主体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。

公开(公告)号：US20080048274A1

公开(公告)日：2008-02-28

申请号：US11878096

申请日：2007-07-20

申请人： Jung-Hun Seo ,  Hyun-Young Kim ,  Jin-Gi Hong

发明人： Jung-Hun Seo ,  Hyun-Young Kim ,  Jin-Gi Hong

IPC分类号： H01L29/78 ,  H01L21/4763

CPC分类号： H01L21/28061 ,  H01L29/4941

摘要： A semiconductor device may include a gate insulating layer on a semiconductor substrate, a polysilicon layer doped with impurities on the gate insulating layer, an interface reaction preventing layer on the polysilicon layer, a barrier layer on the interface reaction preventing layer, and a conductive metal layer on the barrier layer. The interface reaction preventing layer may reduce or prevent the occurrence of a chemical interfacial reaction with the barrier layer, and the barrier layer may reduce or prevent the diffusion of impurities doped to the polysilicon layer. The interface reaction preventing layer may include a metal-rich metal silicide having a metal mole fraction greater than a silicon mole fraction, so that the interface reaction preventing layer may reduce or prevent the dissociation of the barrier layer at higher temperatures. Thus, a barrier characteristic of a poly-metal gate electrode may be improved and surface agglomerations may be reduced or prevented.

摘要翻译： 半导体器件可以包括在半导体衬底上的栅极绝缘层，在栅极绝缘层上掺杂有杂质的多晶硅层，多晶硅层上的界面反应防止层，界面反应防止层上的阻挡层和导电金属 层在阻挡层上。 界面反应防止层可以减少或防止与阻挡层的化学界面反应的发生，并且阻挡层可以减少或防止掺杂到多晶硅层的杂质的扩散。 界面反应防止层可以包括具有大于硅摩尔分数的金属摩尔分数的富金属的金属硅化物，使得界面反应防止层可以降低或防止在较高温度下阻挡层的解离。 因此，可以改善多金属栅电极的阻挡特性，并且可以减少或防止表面团聚。

公开(公告)号：US20080044593A1

公开(公告)日：2008-02-21

申请号：US11782087

申请日：2007-07-24

申请人： Jung-Hun Seo ,  Eun-Taeck Lee ,  Soo-Hwan Kim

发明人： Jung-Hun Seo ,  Eun-Taeck Lee ,  Soo-Hwan Kim

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/08 ,  C23C16/34 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/4557

摘要： A method of processing a wafer in a chamber including a wafer stage and a showerhead is disclosed. The method includes forming a first protection layer on the wafer stage, heating the wafer stage to a first temperature, heating the showerhead at a second temperature lower than the first temperature, forming a second protection layer on inner surfaces of the process chamber including at least the wafer stage and showerhead, loading a wafer onto the wafer stage, forming a material layer on the wafer, and then unloading the wafer from the wafer stage, and removing by-products generated on the inner surfaces of the process chamber during formation of the material layer while maintaining the first temperature of the wafer stage and the second temperature of the showerhead.

摘要翻译： 公开了一种在包括晶片台和喷头的腔室中处理晶片的方法。 该方法包括在晶片台上形成第一保护层，将晶片台加热到第一温度，在低于第一温度的第二温度下加热喷头，在处理室的内表面上至少包括第二保护层 晶片台和喷头，将晶片装载到晶片台上，在晶片上形成材料层，然后从晶片台卸载晶片，以及在形成工艺室的过程中除去在处理室的内表面上产生的副产物 同时保持晶片台的第一温度和喷头的第二温度。

公开(公告)号：US20070202694A1

公开(公告)日：2007-08-30

申请号：US11589716

申请日：2006-10-31

申请人： Jung-Hun Seo ,  Jin-Gi Hong ,  Yun-Ho Choi ,  Hyun-Chul Kwun ,  Eun-Taeck Lee ,  Jin-Ho Kim

发明人： Jung-Hun Seo ,  Jin-Gi Hong ,  Yun-Ho Choi ,  Hyun-Chul Kwun ,  Eun-Taeck Lee ,  Jin-Ho Kim

IPC分类号： H01L21/44 ,  H01L21/465

CPC分类号： H01L21/76841 ,  C23C16/4405 ,  C23C16/45508 ,  H01L21/28556

摘要： In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.

摘要翻译： 在形成层的方法中，可以在第一晶片上连续地形成钛层和氮化钛层。 在形成氮化钛层期间附着在室内部的副产物可以从室中除去。 可以相对于第二晶片重复形成钛层，形成氮化钛层和除去副产物的工艺。

公开(公告)号：US20070042132A1

公开(公告)日：2007-02-22

申请号：US11450455

申请日：2006-06-12

申请人： Jung-Hun Seo ,  Young-Wook Park ,  JIn-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee ,  Yun-Ho Choi

发明人： Jung-Hun Seo ,  Young-Wook Park ,  JIn-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee ,  Yun-Ho Choi

IPC分类号： H05H1/24 ,  C03C15/00

CPC分类号： C23C16/5096 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76856

摘要： A method of forming plasma used in a process of manufacturing a semiconductor device and a method of forming a layer for a semiconductor device using the plasma are disclosed. The plasma forming method includes forming a plasma region in a sealed space by supplying a plasma source gas into the sealed space at a first flow rate and maintaining the plasma region by supplying a plasma maintenance gas into the sealed space at a second flow rate higher than the first flow rate. The plasma source gas includes a first gas having a first atomic weight, and the plasma maintenance gas includes a second gas having a second atomic weight lower than the first atomic weight. The plasma source gas includes argon and the plasma maintenance gas includes helium. The method may further include forming the layer on a wafer by supplying a source gas into the sealed space.

摘要翻译： 公开了一种在制造半导体器件的工艺中使用的形成等离子体的方法以及使用该等离子体形成半导体器件层的方法。 等离子体形成方法包括在密封空间中形成等离子体区域，通过以等于第一流量的方式将密封空间中的等离子体源气体以第一流量提供，并通过以等于或等于 第一流量。 等离子体源气体包括具有第一原子量的第一气体，等离子体维持气体包括具有比第一原子量低的第二原子量的第二气体。 等离子体源气体包括氩气，等离子体维持气体包括氦气。 该方法还可以包括通过将源气体供应到密封空间中在晶片上形成该层。

公开(公告)号：US20050150462A1

公开(公告)日：2005-07-14

申请号：US11030808

申请日：2005-01-05

申请人： Jung-Hun Seo ,  Yun-Ho Choi ,  Young-Wook Park ,  Jeong-Tae Kim

发明人： Jung-Hun Seo ,  Yun-Ho Choi ,  Young-Wook Park ,  Jeong-Tae Kim

IPC分类号： H01L21/205 ,  C23C16/00 ,  C23C16/44 ,  C23C16/458 ,  H01L21/687

CPC分类号： C23C16/4586 ,  C23C16/4404 ,  C23C16/4581 ,  H01L21/68742 ,  Y10T29/49

摘要： Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.

摘要翻译： 提供了一种提升销，其能够通过化学气相沉积在金属层上沉积金属层时能够防止铝沉积在升降销上。 使用升降销的系统及其制造方法。 提升销由不锈钢制成，并在预定温度下氧化预定时间，使得在CVD工艺期间提升销不被铝沉积。 由于CVD真空处理室利用由氧化的SUS材料制成的加热器和提升销，铝不会沉积在加热器和电梯上。 因此，当升降销降低时，提升销不会因其自重而下降，从而防止晶片破裂。 此外，防止升降销被机械人移入和移出CVD真空处理室的开口而破裂。

公开(公告)号：US07547632B2

公开(公告)日：2009-06-16

申请号：US11675158

申请日：2007-02-15

申请人： Jung-Hun Seo ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Hee-Sook Park

发明人： Jung-Hun Seo ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Hee-Sook Park

IPC分类号： H01L21/44

CPC分类号： C23C16/4408 ,  C23C16/54 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76861

摘要： A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer thereon. A transfer chamber is connected to the first processing chamber and the second processing chamber. The transfer chamber is configured to transfer the semiconductor substrate between the first processing chamber and the second processing chamber.

摘要翻译： 金属沉积处理装置包括：第一处理室，被构造成用于将半导体基板保持在其中。 第二处理室构造成用于将半导体衬底保持在其中并用于在其上形成上金属层。 传送室连接到第一处理室和第二处理室。 传送室配置成在第一处理室和第二处理室之间传送半导体衬底。

公开(公告)号：US20060024964A1

公开(公告)日：2006-02-02

申请号：US11154045

申请日：2005-06-15

申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong

发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45544

摘要： The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.

摘要翻译： 使用原子层沉积（ALD）法形成TiN薄膜的方法包括：热分解TiCl 4; 将TiCl 4的热解产物引入室中; 将第一吹扫气体供应到所述室中; 将反应气体供应到室中，由此形成TiN薄膜; 以及将第二吹扫气体供应到所述室中。 形成TiN薄膜的装置包括具有入口管的气体导管，引入源气体TiCl 4; 安装在气体管道周围的加热器，并预先将引入的源气体TiCl 4分解，以形成二次源气体; 以及与气体导管连接的室，具有反应室，在该反应室中，作为反应气体的二次气体和NH 3 3反应形成TiN薄膜。 因此，可以提高TiN薄膜的生长速度。