摘要:
A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.
摘要:
Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要:
Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要:
A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.
摘要:
Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber.
摘要:
Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber.
摘要:
The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.
摘要:
The present invention provides organometallic precursors and methods of forming thin films including using the same. The organometallic precursors include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.
摘要:
A method of forming a thin film including zirconium titanium oxide including introducing a reactant including a mixture of a zirconium precursor and a titanium precursor onto a substrate, and introducing an oxidizing agent onto the substrate to form a solid material including zirconium titanium oxide on the substrate is provided. The thin film may be applied to a gate insulation layer of the gate structure, a dielectric layer of the capacitor or a flash memory device, and methods of forming the same are provided.
摘要:
Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower dielectric layer. The lower dielectric layer may be formed of dielectrics having larger energy band gap than that of the upper dielectric layer. An upper electrode is formed on the upper dielectric layer. The upper electrode may be formed of a metal layer having a higher work function than that of the lower electrode.