公开(公告)号：US20100207184A1

公开(公告)日：2010-08-19

申请号：US12658154

申请日：2010-02-03

申请人： Kihyun Kim ,  Hansoo Kim ,  Wonseok Cho ,  Jinho Kim ,  Jaehoon Jang ,  Byoungkeun Son

发明人： Kihyun Kim ,  Hansoo Kim ,  Wonseok Cho ,  Jinho Kim ,  Jaehoon Jang ,  Byoungkeun Son

IPC分类号： H01L29/78

CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556

摘要： A semiconductor device includes insulating patterns and gate patterns alternately stacked on a substrate; an active pattern on the substrate, which extends upward along sidewalls of the insulating patterns and the gate patterns; data storage patterns interposed between the gate patterns and the active pattern; and a source/drain region disposed in the active pattern between a pair of gate patterns adjacent to each other.

摘要翻译： 半导体器件包括交替层叠在衬底上的绝缘图案和栅极图案; 衬底上的有源图案，其沿绝缘图案和栅极图案的侧壁向上延伸; 插入在栅极图案和活动图案之间的数据存储图案; 以及设置在相互邻近的一对栅极图案之间的有源图案中的源极/漏极区域。

公开(公告)号：US09111799B2

公开(公告)日：2015-08-18

申请号：US13109230

申请日：2011-05-17

申请人： Sung-Min Hwang ,  Kyoung-Hoon Kim ,  Hansoo Kim ,  Jae-Joo Shim ,  Jaehoon Jang ,  Wonseok Cho ,  Byoungkeun Son ,  Hoosung Cho

发明人： Sung-Min Hwang ,  Kyoung-Hoon Kim ,  Hansoo Kim ,  Jae-Joo Shim ,  Jaehoon Jang ,  Wonseok Cho ,  Byoungkeun Son ,  Hoosung Cho

IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L29/66

CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括掺杂有第一导电型掺杂剂的衬底，并且在衬底上并排布置并沿第一方向延伸的多个堆叠结构，每个堆叠结构包括彼此间隔开的栅电极， 堆叠结构，包括一对堆叠结构，其在垂直于第一方向的第二方向上以第一间隔彼此间隔开;以及拾取区域，在所述一对堆叠结构中的衬底中沿第一方向延伸并掺杂 第一导电型掺杂剂。

公开(公告)号：US20110291172A1

公开(公告)日：2011-12-01

申请号：US13109230

申请日：2011-05-17

申请人： Sung-Min Hwang ,  Kyoung-Hoon Kim ,  Hansoo Kim ,  Jae-Joo Shim ,  Jaehoon Jang ,  Wonseok Cho ,  Byoungkeun Son ,  Hoosung Cho

发明人： Sung-Min Hwang ,  Kyoung-Hoon Kim ,  Hansoo Kim ,  Jae-Joo Shim ,  Jaehoon Jang ,  Wonseok Cho ,  Byoungkeun Son ,  Hoosung Cho

IPC分类号： H01L29/78

CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括掺杂有第一导电型掺杂剂的衬底，并且在衬底上并排布置并沿第一方向延伸的多个堆叠结构，每个堆叠结构包括彼此间隔开的栅电极， 堆叠结构，包括一对堆叠结构，其在垂直于第一方向的第二方向上以第一间隔彼此间隔开;以及拾取区域，在所述一对堆叠结构中的衬底中沿第一方向延伸并掺杂 第一导电型掺杂剂。

公开(公告)号：US20120322252A1

公开(公告)日：2012-12-20

申请号：US13594102

申请日：2012-08-24

申请人： Byoungkeun SON ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

发明人： Byoungkeun SON ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

IPC分类号： H01L21/336

CPC分类号： H01L27/0207 ,  G11C7/18 ,  H01L23/535 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a substantially planar substrate; a memory string vertical to the substrate, the memory string comprising a plurality of storage cells; and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

摘要翻译： 半导体存储器件包括基本上平面的衬底; 垂直于衬底的存储器串，所述存储器串包括多个存储单元; 和多个细长字线，每个字线包括基本上平行于衬底并连接到存储器串的第一部分和相对于衬底基本上倾斜并在衬底上延伸的第二部分，其中多个 字线电连接到设置在存储器串的第一侧的第一导线，并且多个字线的第二组电连接到设置在存储器串的第二侧的第二导电线。

公开(公告)号：US08787082B2

公开(公告)日：2014-07-22

申请号：US13594102

申请日：2012-08-24

申请人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

发明人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

IPC分类号： G11C16/04

CPC分类号： H01L27/0207 ,  G11C7/18 ,  H01L23/535 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a substantially planar substrate; a memory string vertical to the substrate, the memory string comprising a plurality of storage cells; and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

摘要翻译： 半导体存储器件包括基本上平面的衬底; 垂直于衬底的存储器串，所述存储器串包括多个存储单元; 和多个细长字线，每个字线包括基本上平行于衬底并连接到存储器串的第一部分和相对于衬底基本上倾斜并在衬底上延伸的第二部分，其中多个 字线电连接到设置在存储器串的第一侧的第一导线，并且多个字线的第二组电连接到设置在存储器串的第二侧的第二导电线。

公开(公告)号：US08284601B2

公开(公告)日：2012-10-09

申请号：US12752485

申请日：2010-04-01

申请人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

发明人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

IPC分类号： G11C16/04

CPC分类号： H01L27/0207 ,  G11C7/18 ,  H01L23/535 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a substantially planar substrate, a memory string vertical to the substrate, the memory string comprising a plurality of storage cells, and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

摘要翻译： 半导体存储器件包括基本上平面的衬底，垂直于衬底的存储器串，存储串包括多个存储单元，以及多个细长字线，每个字线包括基本上平行于衬底的第一部分， 到存储器串和相对于衬底基本上倾斜并在衬底上延伸的第二部分，其中多个字线中的第一组电连接到设置在存储器串的第一侧的第一导电线，以及第二组 多个字线的组电连接到设置在存储器串的第二侧的第二导线。

公开(公告)号：US20100254191A1

公开(公告)日：2010-10-07

申请号：US12752485

申请日：2010-04-01

申请人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

发明人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

IPC分类号： G11C16/02 ,  H01L21/3205

CPC分类号： H01L27/0207 ,  G11C7/18 ,  H01L23/535 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a substantially planar substrate; a memory string vertical to the substrate, the memory string comprising a plurality of storage cells; and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

摘要翻译： 半导体存储器件包括基本上平面的衬底; 垂直于衬底的存储器串，所述存储器串包括多个存储单元; 以及多个细长字线，每个字线包括基本上平行于衬底并连接到存储器串的第一部分和相对于衬底基本上倾斜并在衬底上方延伸的第二部分，其中多个 字线电连接到设置在存储器串的第一侧的第一导线，并且多个字线的第二组电连接到设置在存储器串的第二侧的第二导电线。

公开(公告)号：US09917094B2

公开(公告)日：2018-03-13

申请号：US14920223

申请日：2015-10-22

申请人： Wookhyoung Lee ,  Jongsik Chun ,  Sunil Shim ,  Jaeyoung Ahn ,  Juyul Lee ,  Kihyun Hwang ,  Hansoo Kim ,  Woonkyung Lee ,  Jaehoon Jang ,  Wonseok Cho

发明人： Wookhyoung Lee ,  Jongsik Chun ,  Sunil Shim ,  Jaeyoung Ahn ,  Juyul Lee ,  Kihyun Hwang ,  Hansoo Kim ,  Woonkyung Lee ,  Jaehoon Jang ,  Wonseok Cho

IPC分类号： G11C5/06 ,  H01L27/11565 ,  G11C7/00 ,  H01L23/48 ,  G11C7/18 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/02

CPC分类号： H01L27/11565 ,  G11C5/06 ,  G11C5/063 ,  G11C7/00 ,  G11C7/18 ,  H01L23/48 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.

公开(公告)号：US09177613B2

公开(公告)日：2015-11-03

申请号：US14018885

申请日：2013-09-05

申请人： Wookhyoung Lee ,  Jongsik Chun ,  Sunil Shim ,  Jaeyoung Ahn ,  Juyul Lee ,  Kihyun Hwang ,  Hansoo Kim ,  Woonkyung Lee ,  Jaehoon Jang ,  Wonseok Cho

发明人： Wookhyoung Lee ,  Jongsik Chun ,  Sunil Shim ,  Jaeyoung Ahn ,  Juyul Lee ,  Kihyun Hwang ,  Hansoo Kim ,  Woonkyung Lee ,  Jaehoon Jang ,  Wonseok Cho

IPC分类号： G11C5/06 ,  G11C7/00 ,  H01L23/48 ,  G11C7/18 ,  H01L27/115 ,  H01L27/02

CPC分类号： H01L27/11565 ,  G11C5/06 ,  G11C5/063 ,  G11C7/00 ,  G11C7/18 ,  H01L23/48 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.

摘要翻译： 提供了一种半导体器件，其包括设置在基板上的栅极结构，插入在栅极结构之间的分离绝缘层以及通过每个栅极结构连接到基板的多个单元柱。 每个栅极结构可以包括垂直堆叠在基板上的水平电极，并且相邻的单元柱之间的间隔是不均匀的。

公开(公告)号：US08592912B2

公开(公告)日：2013-11-26

申请号：US13106481

申请日：2011-05-12

申请人： Sung-Min Hwang ,  Hansoo Kim ,  Wonseok Cho ,  Jaehoon Jang ,  Jae-Joo Shim

发明人： Sung-Min Hwang ,  Hansoo Kim ,  Wonseok Cho ,  Jaehoon Jang ,  Jae-Joo Shim

IPC分类号： H01L29/78

CPC分类号： H01L27/0207 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11582

摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a plurality of conductive patterns stacked on a substrate and spaced apart from each other and a pad pattern including a flat portion extending in a first direction parallel to the substrate from one end of any one of the plurality of conductive patterns, and a landing sidewall portion extending upward from a top surface of the flat portion, wherein a width of a portion of the landing sidewall portion in a second direction parallel to the substrate and perpendicular to the first direction is less than a width of the flat portion.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：多个导电图案，其堆叠在基板上并彼此间隔开;以及焊盘图案，其包括从多个导电图案中的任一个的一端平行于基板延伸的平坦部分， 以及从所述平坦部分的顶表面向上延伸的着陆侧壁部分，其中所述着陆侧壁部分在平行于所述基板并且垂直于所述第一方向的第二方向上的一部分的宽度小于所述平坦部分的宽度 。