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公开(公告)号:US5793022A
公开(公告)日:1998-08-11
申请号:US710158
申请日:1996-09-12
CPC分类号: G05B13/024
摘要: An adaptive controller for controlling the temperature of a body. The adaptive controller of the present invention comprises a temperature measuring device which measures the temperature of the body. A controller which has a controller integral time constant and a controller gain constant is provided for controlling a heating device. An adjustment mechanism is provided which determines the controller integral time constant and the controller gain constant where the controller integral time constant and the controller gain constant are dependent upon the difference between the present temperature of the body and the desired temperature of the body.
摘要翻译: 一种用于控制身体温度的自适应控制器。 本发明的自适应控制器包括测量身体温度的温度测量装置。 提供具有控制器积分时间常数和控制器增益常数的控制器,用于控制加热装置。 提供了一种调节机制,其确定控制器积分时间常数和控制器增益常数,其中控制器积分时间常数和控制器增益常数取决于身体的当前温度与身体的期望温度之间的差异。
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公开(公告)号:US5914050A
公开(公告)日:1999-06-22
申请号:US934920
申请日:1997-09-22
IPC分类号: C23C16/44 , C23C16/48 , H01L21/205 , C23C16/00
CPC分类号: C23C16/4405 , C23C16/4401
摘要: Chemical vapor deposition apparatus 10 which includes a chemical vapor deposition processing chamber 12 having a base ring 18 and upper and lower quartz windows 20 and 22, and a quartz liner 26 lining the base ring 18, wherein a purge channel 46 is formed, in an outer surface of the liner 26, to remove contaminant material from an interface between the base ring 18 and the liner 26.
摘要翻译: 化学气相沉积装置10包括具有基环18和上,下石英窗20和22的化学气相沉积处理室12和衬在基环18上的石英衬垫26,其中形成有净化通道46 衬套26的外表面,以从基环18和衬套26之间的界面去除污染物质。
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3.
公开(公告)号:US5809211A
公开(公告)日:1998-09-15
申请号:US570395
申请日:1995-12-11
IPC分类号: C30B25/10 , C30B25/16 , G01J5/00 , G01J5/10 , H01L21/00 , H01L23/34 , G01J5/28 , F27B1/26 , F27D19/00 , H01L21/66
CPC分类号: H01L21/67248 , C30B25/10 , C30B25/16 , G01J5/0003 , G01J5/10 , H01L21/67115 , H01L23/34 , H01L23/345 , H01L2924/0002
摘要: A method and apparatus for uniformly ramping the temperatures of a wafer and a susceptor using a first heat source primarily directed at the wafer and a second heat source primarily directed at the susceptor while keeping the wafer at approximately the same temperature as the susceptor but measuring only the temperature of the susceptor. The method comprises the steps of: determining and storing a plurality of steady-state temperatures of the susceptor as a function of the total power provided to the first heat source and the second heat source; ramping the susceptor from an initial temperature to a final temperature; and heating the wafer from the initial temperature to the final temperature, wherein the power to the first heat source is determined from the susceptor's temperature and the plurality of steady-state temperatures of the wafer and susceptor as a function of total power.
摘要翻译: 一种用于使用主要指向晶片的第一热源和主要指向基座的第二热源均匀地斜升晶片和基座的温度的方法和装置,同时将晶片保持在与基座大致相同的温度,但仅测量 感受器的温度。 该方法包括以下步骤:根据提供给第一热源和第二热源的总功率来确定和存储基座的多个稳态温度; 将基座从初始温度斜升到最终温度; 以及将晶片从初始温度加热到最终温度,其中根据基座的温度和作为总功率的函数的晶片和基座的多个稳态温度来确定对第一热源的功率。
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