公开(公告)号：US07432594B2

公开(公告)日：2008-10-07

申请号：US11173740

申请日：2005-06-30

申请人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

发明人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L24/40 ,  H01L21/566 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

摘要翻译： 半导体器件具有包括在半导体芯片的厚度方向上彼此相对的第一和第二表面的半导体芯片，其中第一和第二表面分别包括第一和第二电极表面，第一和第二导电构件覆盖第一和第二表面 第二电极表面分别在厚度方向上看到以分别电连接到第一和第二电极表面。

公开(公告)号：US20060043618A1

公开(公告)日：2006-03-02

申请号：US11173740

申请日：2005-06-30

申请人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

发明人： Kisho Ashida ,  Akira Muto ,  Ichio Shimizu ,  Toshiyuki Hata ,  Kenya Kawano ,  Naotaka Tanaka ,  Nae Hisano

IPC分类号： H01L31/109

CPC分类号： H01L24/40 ,  H01L21/566 ,  H01L23/49562 ,  H01L24/37 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

摘要翻译： 半导体器件具有包括在半导体芯片的厚度方向上彼此相对的第一和第二表面的半导体芯片，其中第一和第二表面分别包括第一和第二电极表面，第一和第二导电构件覆盖第一和第二电极表面， 第二电极表面分别在厚度方向上看到以分别电连接到第一和第二电极表面。

公开(公告)号：US20080224282A1

公开(公告)日：2008-09-18

申请号：US12011397

申请日：2008-01-25

申请人： Kisho Ashida ,  Kenya Kawano ,  Akira Muto ,  Ichio Shimizu

发明人： Kisho Ashida ,  Kenya Kawano ,  Akira Muto ,  Ichio Shimizu

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/36 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A technique for preventing cracks and residual resin on a semiconductor chip in a molding process in the assembly of semiconductor devices is provided. A distance from a bottom surface of a cavity of a lower mold die to a ceiling surface of a cavity of an upper mold die of a resin molding die is made same as or smaller than a distance from a lower surface of a die pad to an upper surface of a plate terminal, and an U-shape elastic body is arranged on semiconductor elements between the plate terminal and the die pad, thereby mitigating a load due to a clamp pressure of mold dies in the molding process by an elastic deformation of the elastic body. Consequently, a load applied on the semiconductor devices is reduced, thereby preventing formation of cracks on the semiconductor elements.

摘要翻译： 提供了一种用于在半导体器件的组装中的模制工艺中防止半导体芯片上的裂纹和残留树脂的技术。 与树脂成型模具的上模具的模腔的下表面的下表面的距离与从模垫的下表面到 板端子的上表面和U形弹性体布置在板端子和管芯焊盘之间的半导体元件上，从而通过模制过程中的模具的弹性变形来减轻由于模具的夹紧压力引起的负载 弹性体。 因此，施加在半导体器件上的负载减小，从而防止在半导体元件上形成裂纹。

公开(公告)号：US20110156274A1

公开(公告)日：2011-06-30

申请号：US13043319

申请日：2011-03-08

申请人： Kenya Kawano ,  Kisho Ashida ,  Naotaka Tanaka ,  Hiroshi Sato ,  Ichio Shimizu

发明人： Kenya Kawano ,  Kisho Ashida ,  Naotaka Tanaka ,  Hiroshi Sato ,  Ichio Shimizu

IPC分类号： H01L23/52

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/84 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84345 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove.

摘要翻译： 本发明提供一种半导体器件，其能够抑制由于安装有功率晶体管的半导体器件中的连接板的移动引起的导电性粘合剂的厚度的降低导致的连接可靠性的劣化。 在连接到引线柱的​​连接板的薄壁部分设有台阶，以通过使台阶与引线柱的尖端接触来锁定连接板。 或者，在连接板的薄部分中设置有槽，以通过将引线柱仅与槽的尖端侧的连接板的部分连接来锁定连接板。

公开(公告)号：US20070176266A1

公开(公告)日：2007-08-02

申请号：US11640161

申请日：2006-12-15

申请人： Kenya Kawano ,  Kisho Ashida ,  Naotaka Tanaka ,  Hiroshi Sato ,  Ichio Shimizu

发明人： Kenya Kawano ,  Kisho Ashida ,  Naotaka Tanaka ,  Hiroshi Sato ,  Ichio Shimizu

IPC分类号： H01L29/06 ,  H01L23/48

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/84 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84345 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove.

摘要翻译： 本发明提供一种半导体器件，其能够抑制由于安装有功率晶体管的半导体器件中的连接板的移动引起的导电性粘合剂的厚度的降低导致的连接可靠性的劣化。 在连接到引线柱的​​连接板的薄壁部分设有台阶，以通过使台阶与引线柱的尖端接触来锁定连接板。 或者，在连接板的薄部分中设置有槽，以通过将引线柱仅与槽的尖端侧的连接板的部分连接来锁定连接板。

公开(公告)号：US20100181628A1

公开(公告)日：2010-07-22

申请号：US12691168

申请日：2010-01-21

申请人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

发明人： Kenya Kawano ,  Kisho Ashida ,  Kuniharu Muto ,  Ichio Shimizu ,  Tomibumi Inoue

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78703 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85385 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2924/206

摘要： Prevention of disconnection of a bonding wire resulting from adhesive interface delamination between a resin and a leadframe, and improvement of joint strength of the resin and the leadframe are achieved in a device manufactured by a low-cost and simple processing. A boss is provided on a source lead by a stamping processing, and a support pillar is provided in a concave portion on a rear side of the source lead in order to prevent ultrasonic damping upon joining the bonding wire onto the boss, so that an insufficiency of the joint strength between the bonding wire and the source lead is prevented. Also, a continuous bump is provided on the boss so as to surround a joint portion between the source lead and the bonding wire, so that disconnection of the bonding wire resulting from delamination between the resin and the source lead is prevented.

摘要翻译： 在通过低成本且简单的加工制造的装置中，可以防止树脂与引线框之间的粘合剂界面分层导致的接合线的断开，提高树脂和引线框的接合强度。 通过冲压加工在源极上设置凸台，并且在源极的后侧的凹部设置支撑柱，以便在将接合线接合到凸台上时防止超声波阻尼，使得不足 阻止了接合线和源极之间的接合强度。 此外，在凸台上设置连续凸块，以围绕源极引线和接合线之间的接合部分，从而防止由树脂和源极引线之间的分层导致的接合线的断开。

公开(公告)号：US20090190320A1

公开(公告)日：2009-07-30

申请号：US12362354

申请日：2009-01-29

申请人： ICHIO SHIMIZU ,  Kenya Kawano ,  Kisho Ashida ,  Yuichi Machida

发明人： ICHIO SHIMIZU ,  Kenya Kawano ,  Kisho Ashida ,  Yuichi Machida

IPC分类号： H05K7/04 ,  H01L23/48

CPC分类号： H05K7/04 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/28 ,  H01L24/29 ,  H01L24/36 ,  H01L24/39 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/83855 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H05K3/202 ,  H05K3/321 ,  H05K3/3442 ,  H05K2201/0397 ,  H05K2201/09663 ,  H05K2201/0969 ,  H05K2201/09745 ,  H05K2201/1003 ,  H05K2201/10484 ,  H05K2201/10636 ,  H05K2201/10924 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).

摘要翻译： 改善了无源部件的耦合可靠性，以提高半导体器件的可靠性。 第一通孔形成在第一板状引线的第一电极部分中，第二通孔形成在第二板状引线的第二电极部分中。 结果，在第一板状引线的第一电极部分，无源部件的一个外部端子可以被连接到第一通孔的两侧的第一电极部分，同时跨过第一通孔。 此外，在第二板状引线的第二电极部分，无源部件的另一个外部端子可以在跨过第二通孔而被布置在第二通孔的两侧上的第二电极部件上。 因此，在无源部件的纵向和宽度方向的中心部分处，被动部件被密封部件包围。 结果，可以减少施加到诸如焊料的接合材料的热应力，从而提高半导体器件（半导体封装）的可靠性。

公开(公告)号：US07732919B2

公开(公告)日：2010-06-08

申请号：US12362354

申请日：2009-01-29

申请人： Ichio Shimizu ,  Kenya Kawano ,  Kisho Ashida ,  Yuichi Machida

发明人： Ichio Shimizu ,  Kenya Kawano ,  Kisho Ashida ,  Yuichi Machida

IPC分类号： H01L23/34

CPC分类号： H05K7/04 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/28 ,  H01L24/29 ,  H01L24/36 ,  H01L24/39 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/83855 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H05K3/202 ,  H05K3/321 ,  H05K3/3442 ,  H05K2201/0397 ,  H05K2201/09663 ,  H05K2201/0969 ,  H05K2201/09745 ,  H05K2201/1003 ,  H05K2201/10484 ,  H05K2201/10636 ,  H05K2201/10924 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).

摘要翻译： 改善了无源部件的耦合可靠性，以提高半导体器件的可靠性。 第一通孔形成在第一板状引线的第一电极部分中，第二通孔形成在第二板状引线的第二电极部分中。 结果，在第一板状引线的第一电极部分，无源部件的一个外部端子可以被连接到第一通孔的两侧的第一电极部分，同时跨过第一通孔。 此外，在第二板状引线的第二电极部分，无源部件的另一个外部端子可以在跨过第二通孔而被布置在第二通孔的两侧上的第二电极部件上。 因此，在无源部件的纵向和宽度方向的中心部分处，被动部件被密封部件包围。 结果，可以减少施加到诸如焊料的接合材料的热应力，从而提高半导体器件（半导体封装）的可靠性。

公开(公告)号：US20150020601A1

公开(公告)日：2015-01-22

申请号：US14379683

申请日：2012-03-02

申请人： Kentaro Miyajima ,  Kisho Ashida ,  Hiroyuki Oota

发明人： Kentaro Miyajima ,  Kisho Ashida ,  Hiroyuki Oota

IPC分类号： G01L1/22 ,  G01N19/00

CPC分类号： G01L1/2293 ,  G01B7/16 ,  G01B7/18 ,  G01L1/044 ,  G01L1/18 ,  G01L1/2262 ,  G01L1/2281 ,  G01N19/00

摘要： A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

摘要翻译： 提供了一种用于测量机械量的装置，其减少了被测量物体与基板金属体之间的热膨胀系数的差异的影响，并且精确地测量在物体中产生的变形量或应变量的机械量 被测量。 该装置包括用于测量被测量物体的变形量的半导体应变传感器模块，并且该模块包括金属体，以及安装在金属体上的半导体应变传感器，用于检测金属体的应变。 待测量的物体由热膨胀系数大于金属体的材料制成。 此外，安装有半导体应变传感器的金属体具有被配置为固定到待测量对象的结构。

公开(公告)号：US08299599B2

公开(公告)日：2012-10-30

申请号：US13040234

申请日：2011-03-03

申请人： Hiroyuki Nakamura ,  Atsushi Fujiki ,  Tatsuhiro Seki ,  Nobuya Koike ,  Yukihiro Sato ,  Kisho Ashida

发明人： Hiroyuki Nakamura ,  Atsushi Fujiki ,  Tatsuhiro Seki ,  Nobuya Koike ,  Yukihiro Sato ,  Kisho Ashida

IPC分类号： H01L23/48 ,  H01L23/10

CPC分类号： H01L27/07 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L29/66 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP1, power MOSFETs Q1 and Q2 for the switch, a diode DD1 for detecting the heat generation of the power MOSFET Q1, a diode DD2 for detecting the heat generation of the power MOSFET Q2, and plural pad electrodes PD are formed. The power MOSFET Q1 and the diode DD1 are arranged in a first MOSFET region RG1 on the side of a side SD1, and the power MOSFET Q2 and the diode DD2 are arranged in a second MOSFET region RG2 on the side of a side SD2. The diode DD1 is arranged along the side SD1, the diode DD2 is arranged along the side SD2, and all pad electrodes PD other than the pad electrodes PDS1 and PDS2 for the source are arranged along a side SD3 between the diodes DD1 and DD2.

摘要翻译： 提高半导体器件的性能和可靠性。 对于半导体芯片CP1，用于开关的功率MOSFET Q1和Q2，用于检测功率MOSFET Q1的发热的二极管DD1，用于检测功率MOSFET Q2的发热的二极管DD2和多个焊盘电极PD 。 功率MOSFET Q1和二极管DD1布置在侧面SD1侧的第一MOSFET区域RG1中，功率MOSFET Q2和二极管DD2布置在侧面SD2侧的第二MOSFET区RG2中。 二极管DD1沿着侧面SD1配置，二极管DD2沿着侧面SD2配置，除了用于源极的焊盘电极PDS1和PDS2以外的所有焊盘电极PD沿着二极管DD1和DD2之间的侧面SD3排列。