公开(公告)号：US07749919B2

公开(公告)日：2010-07-06

申请号：US11896860

申请日：2007-09-06

申请人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

发明人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

IPC分类号： H01L21/321

CPC分类号： H01L21/28273

摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.

摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

公开(公告)号：US20080173927A1

公开(公告)日：2008-07-24

申请号：US11896860

申请日：2007-09-06

申请人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

发明人： Kiwamu Sakuma ,  Daisuke Matsushita ,  Koichi Kato ,  Yasushi Nakasaki ,  Izumi Hirano ,  Kouichi Muraoka ,  Yuichiro Mitani ,  Shigeto Fukatsu ,  Toshihide Ito

IPC分类号： H01L29/788 ,  H01L21/336 ,  H01L29/792

CPC分类号： H01L21/28273

摘要： A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.

摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在半导体衬底的一部分上的第一绝缘膜，该部分位于源区和漏区之间; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上方并由高介电常数材料制成的第二绝缘膜; 形成在所述第二绝缘膜上方的控制栅电极; 和包含具有三配位氮键的氮原子的氮化硅层，氮原子的第二最近邻原子中的至少一个为氮原子。 电荷存储膜和控制栅电极中的至少一个包含硅，氮化硅层位于第二绝缘膜和电荷存储膜和控制栅电极中的至少一个之间。

公开(公告)号：US20110003481A1

公开(公告)日：2011-01-06

申请号：US12801912

申请日：2010-07-01

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

IPC分类号： H01L21/314

CPC分类号： H01L27/11568 ,  C23C8/02 ,  C23C8/24 ,  C23C8/80 ,  H01L21/2652 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/28273 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/105 ,  H01L29/513

摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.

摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。

公开(公告)号：US20060278940A1

公开(公告)日：2006-12-14

申请号：US11287192

申请日：2005-11-28

申请人： Koichi Kato ,  Daisuke Matsushita ,  Koichi Muraoka ,  Yasushi Nakasaki ,  Yuichiro Mitani ,  Nobutoshi Aoki

发明人： Koichi Kato ,  Daisuke Matsushita ,  Koichi Muraoka ,  Yasushi Nakasaki ,  Yuichiro Mitani ,  Nobutoshi Aoki

IPC分类号： H01L29/94

CPC分类号： H01L29/16 ,  H01L21/28176 ,  H01L21/28185 ,  H01L29/518

摘要： A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体基板上的绝缘膜; 以及设置在所述绝缘膜上并且含有硼和半导体材料的电极，其中所述V族和碳族中的至少一种元素被引入到所述绝缘膜和所述电极之间的界面中。

公开(公告)号：US08557717B2

公开(公告)日：2013-10-15

申请号：US12801912

申请日：2010-07-01

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L27/11568 ,  C23C8/02 ,  C23C8/24 ,  C23C8/80 ,  H01L21/2652 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/28273 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/105 ,  H01L29/513

摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.

摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。

公开(公告)号：US07772129B2

公开(公告)日：2010-08-10

申请号：US11547691

申请日：2006-08-28

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L27/11568 ,  C23C8/02 ,  C23C8/24 ,  C23C8/80 ,  H01L21/2652 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/28273 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/105 ,  H01L29/513

摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.

摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。

公开(公告)号：US07586163B2

公开(公告)日：2009-09-08

申请号：US11287192

申请日：2005-11-28

申请人： Koichi Kato ,  Daisuke Matsushita ,  Koichi Muraoka ,  Yasushi Nakasaki ,  Yuichiro Mitani ,  Nobutoshi Aoki

发明人： Koichi Kato ,  Daisuke Matsushita ,  Koichi Muraoka ,  Yasushi Nakasaki ,  Yuichiro Mitani ,  Nobutoshi Aoki

IPC分类号： H01L29/76

CPC分类号： H01L29/16 ,  H01L21/28176 ,  H01L21/28185 ,  H01L29/518

摘要： A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a semiconductor material, wherein at least one element of the group V and carbon is introduced into an interface between the insulation film and the electrode.

摘要翻译： 半导体器件包括半导体衬底; 设置在所述半导体基板上的绝缘膜; 以及设置在所述绝缘膜上并且含有硼和半导体材料的电极，其中所述V族和碳族中的至少一种元素被引入到所述绝缘膜和所述电极之间的界面中。

公开(公告)号：US20080305647A1

公开(公告)日：2008-12-11

申请号：US11547691

申请日：2006-08-28

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Koichi Kato ,  Yasushi Nakasaki ,  Yuichiro Mitani

IPC分类号： H01L21/469

CPC分类号： H01L27/11568 ,  C23C8/02 ,  C23C8/24 ,  C23C8/80 ,  H01L21/2652 ,  H01L21/28202 ,  H01L21/28238 ,  H01L21/28273 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/105 ,  H01L29/513

摘要： It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.

摘要翻译： 可以抑制成膜时的缺陷的产生。 一种制造半导体器件的方法，包括：将半导体衬底放置在大气中，从而在所述半导体衬底的表面上形成氮化物膜，所述气氛包含氮化所述半导体衬底的表面的第一氮化气体和第一稀释气体 实际上不与半导体衬底反应，第一稀释气体的分压和第一氮化气体的分压与第一氮化气体的分压之和的比率为5以上， 气氛为40乇或更低。

公开(公告)号：US20080173930A1

公开(公告)日：2008-07-24

申请号：US11902132

申请日：2007-09-19

申请人： Hiroshi Watanabe ,  Daisuke Matsushita ,  Kouichi Muraoka ,  Yasushi Nakasaki ,  Koichi Kato

发明人： Hiroshi Watanabe ,  Daisuke Matsushita ,  Kouichi Muraoka ,  Yasushi Nakasaki ,  Koichi Kato

IPC分类号： H01L29/788 ,  H01L21/285 ,  H01L29/792

CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/792

摘要： The present invention provides a semiconductor memory device having a tunnel insulating film that does not degrade the endurance characteristics when writing/erasing is repeated, even if the tunnel insulating film is made thinner. The semiconductor memory device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate, and including a silicon oxynitride film and a silicon-rich silicon oxide film formed on the silicon oxynitride film, the silicon oxynitride film having a stacked structure formed with a first silicon oxynitride layer, a silicon nitride layer, and a second silicon oxynitride layer in order; a charge storage layer formed on the first insulating film; a second insulating film formed on the charge storage layer; and a control gate formed on the second insulating film.

摘要翻译： 本发明提供了一种半导体存储器件，其具有隧道绝缘膜，即使在隧道绝缘膜变薄的情况下，也不会降低写入/擦除时的耐久特性。 半导体存储器件包括：半导体衬底; 形成在所述半导体衬底上的第一绝缘膜，并且包括氮氧化硅膜和形成在所述氧氮化硅膜上的富硅氧化物膜，所述氧氮化硅膜具有由第一氮氧化硅层形成的堆叠结构，氮化硅 层和第二氮氧化硅层; 形成在所述第一绝缘膜上的电荷存储层; 形成在电荷存储层上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅极。

公开(公告)号：US07816215B2

公开(公告)日：2010-10-19

申请号：US10941814

申请日：2004-09-16

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成栅极绝缘膜，方法是在衬底上形成第一氮化物膜; 形成第一氧化物膜和第二氧化物膜，所述第一氧化膜位于所述衬底和所述第一氮化物膜之间，所述第二氧化物膜位于所述第一氮化物膜上; 并且对所述第二氧化物膜进行氮化以在所述第一氮化物膜上形成以下之一：第二氮化物膜或SiON膜; 并在所述栅极绝缘膜上形成栅电极; 其中所述栅绝缘膜的等效氧化物厚度等于或小于1nm。