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公开(公告)号：US4451499A
公开(公告)日：1984-05-29
申请号：US403151
申请日：1982-07-29
IPC分类号： C23C14/06 , B01J19/08 , C01F3/02 , C04B35/08 , C23C14/00 , C23C14/08 , C23C14/32 , C23C14/56 , C30B25/02 , C30B25/06 , C30B28/12 , C30B28/14 , C30B29/16 , B05D5/12
CPC分类号： C30B25/06 , B01J19/088 , C01F3/02 , C04B35/08 , C23C14/0005 , C23C14/0021 , C23C14/32 , C30B25/02 , C30B29/16
摘要： A beryllium oxide (BeO) film is disclosed, which is produced by impinging partially ionized vapor of metal beryllium and oxygen upon a substrate.
摘要翻译： 公开了氧化铍（BeO）膜，其通过将金属铍和氧的部分电离蒸气撞击在基底上而制备。
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公开(公告)号：US4286545A
公开(公告)日：1981-09-01
申请号：US80219
申请日：1979-10-01
IPC分类号： C01G15/00 , B01J12/00 , B01J12/02 , C23C14/06 , C23C14/22 , C23C14/24 , C23C14/32 , C30B23/02 , C30B23/08 , C30B25/06 , H01L21/203 , C23C13/12
CPC分类号： C23C14/228 , C23C14/221 , C23C14/24 , C23C14/243 , C30B23/02 , C30B23/08 , Y10S148/006 , Y10S148/045 , Y10S148/064 , Y10S148/065 , Y10S148/072 , Y10S148/169 , Y10S438/935 , Y10S438/961 , Y10S438/971
摘要： A method of producing compounds which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated mixing chamber to form a mixed vapor, jetting the mixed vapor into a vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on a substrate.An apparatus for producing compounds which comprises a plurality of crucibles for separately vaporizing substances containing the component elements of a desired compound to form vapors of the substances, a mixing chamber for heating and mixing the vapors introduced therein to form a mixed vapor, the mixing chamber having at least one injection hole for jetting the mixed vapor into a vacuum region, communication pipes for connecting the mixing chamber to the crucibles, an ionization chamber for ionizing clusters produced from the mixed vapor jetted from the mixing chamber, means for accelerating cluster ions produced in the ionization chamber and making them impinge on a substrate, and a substrate holder for holding the substrate.
摘要翻译： 一种制备化合物的方法，其包括以下步骤：将含有所需化合物的组分元素的多种物质分开蒸发并放置在多个坩埚中以形成物质的蒸气，将蒸气混合在加热的混合室中以形成混合 蒸汽，将混合的蒸气喷射到真空区域中以形成团簇，使簇离子形成簇离子，并加速团簇离子使其碰撞在基底上。 一种用于生产化合物的装置，包括用于分别蒸发含有所需化合物的组分元素的物质的坩埚以形成物质的蒸气;混合室，用于加热和混合引入其中的蒸气以形成混合蒸气;混合室 具有用于将混合蒸气喷射到真空区域中的至少一个喷射孔，用于将混合室连接到坩埚的连通管，用于从由混合室喷射的混合蒸气产生的离子簇的离子化室，用于加速产生的簇离子的装置 在电离室中并使其撞击在基板上，以及用于保持基板的基板支架。
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公开(公告)号：US4213844A
公开(公告)日：1980-07-22
申请号：US968817
申请日：1978-12-12
IPC分类号： H01J37/317 , C23C14/32 , C30B23/08 , C23C15/00
CPC分类号： C23C14/32
摘要： An ion plating apparatus having a plurality of vapor sources for supplying the vapors of evaporating materials, the particles of the vapors being ionized and accelerated by an electric field to impinge on the surface of a substrate so as to form a film of the evaporating materials thereon is disclosed. An ionization chamber common to a plurality of the vapor sources, the ionization chamber being composed of parallel filaments for emitting electrons is also disclosed. Grid-shaped electron-accelerating electrodes are provided between the filaments so that the vapors of the evaporating materials pass between them, and the electron-accelerating electrodes kept at a positive potential with respect to the filaments thereby to ionize the vapors of the evaporating materials.
摘要翻译： 一种离子镀设备，具有用于供应蒸发材料的蒸气的多个蒸汽源，蒸气的微粒被电场电离并加速，以撞击到基板的表面上，从而在其上形成蒸发材料的膜 被披露。 还公开了多个蒸气源共用的电离室，电离室由用于发射电子的平行长丝构成。 网格状的电子加速电极设置在长丝之间，使得蒸发材料的蒸气在它们之间通过，电子加速电极相对于长丝保持在正电势，从而使蒸发材料的蒸气电离。
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公开(公告)号：US4281029A
公开(公告)日：1981-07-28
申请号：US80220
申请日：1979-10-01
IPC分类号： C01G15/00 , B01J12/00 , B01J12/02 , C23C14/06 , C23C14/22 , C23C14/24 , C23C14/32 , C30B23/02 , C30B23/08 , C30B25/06 , H01L21/203 , B05D3/06 , C23C13/08 , H01L7/36
CPC分类号： C23C14/228 , C23C14/221 , C23C14/24 , C23C14/243 , C30B23/02 , C30B23/08 , Y10S148/006 , Y10S148/045 , Y10S148/064 , Y10S148/065 , Y10S148/072 , Y10S148/169 , Y10S438/935 , Y10S438/961 , Y10S438/971
摘要： A method of coating which comprises the steps of separately vaporizing a plurality of substances containing the component elements of a desired compound and placed in a plurality of crucibles to form vapors of the substances, mixing the vapors in a heated mixing chamber to form a mixed vapor, jetting the mixed vapor into a vacuum region to form clusters, ionizing the clusters to form cluster ions, and accelerating the cluster ions to make them impinge on a substrate.An apparatus for coating which comprises a plurality of crucibles for separately vaporizing substances containing the component elements of a desired compound to form vapors of the substances, a mixing chamber for heating and mixing the vapors introduced therein to form a mixed vapor, the mixing chamber having at least one injection hole for jetting the mixed vapor into a vacuum region, communication pipes for connecting the mixing chamber to the crucibles, an ionization chamber for ionizing clusters produced from the mixed vapor jetted from the mixing chamber, means for accelerating cluster ions produced in the ionization chamber and making them impinge on a substrate, and a substrate holder for holding the substrate.
摘要翻译： 一种涂覆方法，其包括以下步骤：将含有所需化合物的组分元素的多种物质分开蒸发并放置在多个坩埚中以形成物质的蒸气，将蒸气混合在加热的混合室中以形成混合蒸气 将混合的蒸汽喷射到真空区域以形成簇，使簇离子形成簇离子，并加速簇离子使其撞击在基底上。 一种用于涂覆的装置，包括用于单独蒸发含有所需化合物的组分元素的物质的坩埚，以形成物质的蒸气;混合室，用于加热和混合引入其中的蒸气以形成混合蒸气，所述混合室具有 用于将混合蒸汽喷射到真空区域中的至少一个喷射孔，用于将混合室连接到坩埚的连通管，用于从由混合室喷射的混合蒸气产生的离子簇的离子化室，用于加速由 电离室并使其撞击在基板上，以及用于保持基板的基板支架。
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公开(公告)号：US4394210A
公开(公告)日：1983-07-19
申请号：US248212
申请日：1981-03-27
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
摘要： There is disclosed a process for forming a lead film by a cluster ion beam deposition which includes the step of impinging ionized and non-ionized neutral clusters having 100 to 2,000 atoms of vapor of lead loosely coupled by Van der Walls force upon a substrate within a vacuum chamber which is kept at about 10.sup.-2 Torr or less thereby forming the lead film thereon.
摘要翻译： 公开了一种用于通过聚簇离子束沉积形成引线膜的方法，该方法包括以下步骤：将具有100至2,000原子的由Van der Walls力松耦合的引线的电离和非离子化中性簇撞击在基底内 真空室保持在约10-2乇或更低，从而在其上形成引线膜。
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公开(公告)号：US4139857A
公开(公告)日：1979-02-13
申请号：US705696
申请日：1976-07-15
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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公开(公告)号：US3967125A
公开(公告)日：1976-06-29
申请号：US552607
申请日：1975-02-24
CPC分类号： H01J37/317 , C09K11/00
摘要： A method of preparing a phosphor by injection of activator ions which become luminescent centers into crystals of a base material of the phosphor comprising the steps of generating ions of an activator, accelerating the activator ions by giving kinetic energy thereto, irradiating and injecting the accelerated activator ions into the base material, and agitating the base material.An apparatus for preparing phosphor according to the method of the invention comprises an activator ion source section having an ion generating section for generating activator ions and an ion accelerating electrode section for accelerating and irradiating the generated activator ions into the base material of the phosphor, a base activating vessel section having an agitating means for containing the base material of the phosphor and for continuously circulating the same therein in order to uniformly irradiate the accelerated activator ions into the base material of the phosphor, and a vacuum system for providing a low-pressure atmosphere at least to the activator ion source section and the base activating vessel section.
摘要翻译： 通过注入成为发光中心的活化剂离子的荧光体的制备方法，该荧光体成为荧光体的基材的晶体，包括以下步骤：产生活化剂的离子，通过向其施加动能来加速活化剂离子，照射和注入加速的活化剂 离子进入基材，并搅拌基材。
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公开(公告)号：US4539054A
公开(公告)日：1985-09-03
申请号：US490535
申请日：1983-05-02
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
IPC分类号： C01B33/06 , C22C45/00 , C23C14/06 , C23C14/14 , C23C14/24 , H01L21/203 , H01L35/00 , H01L35/22 , C22C28/00
摘要： An amorphous film formed of a transition element-silicon compound which has excellent electric and optical characteristics is disclosed. The compound is amorphous and has a Si content of 60-85 at. %.
摘要翻译： 公开了一种由具有优异的电学和光学特性的过渡元素 - 硅化合物形成的非晶膜。 该化合物是无定形的，Si含量为60-85英寸。 ％。
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公开(公告)号：US4500742A
公开(公告)日：1985-02-19
申请号：US574145
申请日：1984-01-26
申请人： Kiyoshi Morimoto , Toshinori Takagi
发明人： Kiyoshi Morimoto , Toshinori Takagi
IPC分类号： H01L35/14 , C01B33/06 , H01L21/203 , H01L35/08 , H01L35/22 , H01L35/34 , H01L35/00 , H01L37/00
CPC分类号： H01L35/34 , H01L35/08 , H01L35/22 , Y02P20/129
摘要： An iron silicide thermoelectric conversion element wherein a part of one of components of the silicide is substituted by oxygen atom to form either Si-O bond or Fe-O bond in a matrix of the compound to provide either p-type conductivity or n-type conductivity as desired.
摘要翻译： 一种硅化铁热电转换元件，其中硅化物中的一种组分的一部分被氧原子取代以在化合物的基质中形成Si-O键或Fe-O键，以提供p型导电性或n型 电导率。
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公开(公告)号：US4218495A
公开(公告)日：1980-08-19
申请号：US935154
申请日：1978-08-21
CPC分类号： H01L21/02422 , C23C14/221 , H01L21/0242 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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