公开(公告)号：US20080151957A1

公开(公告)日：2008-06-26

申请号：US12036409

申请日：2008-02-25

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20070096142A1

公开(公告)日：2007-05-03

申请号：US11511337

申请日：2006-08-29

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US20120138895A1

公开(公告)日：2012-06-07

申请号：US13398170

申请日：2012-02-16

申请人： Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US08835950B2

公开(公告)日：2014-09-16

申请号：US13398170

申请日：2012-02-16

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22 ,  H01L33/02 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/30 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US08466477B2

公开(公告)日：2013-06-18

申请号：US13398239

申请日：2012-02-16

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US07397069B2

公开(公告)日：2008-07-08

申请号：US11511337

申请日：2006-08-29

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US07683390B2

公开(公告)日：2010-03-23

申请号：US12036409

申请日：2008-02-25

申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

公开(公告)号：US07339255B2

公开(公告)日：2008-03-04

申请号：US11185768

申请日：2005-07-21

申请人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

发明人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

IPC分类号： H01L29/04

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/861 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.

摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。

公开(公告)号：US07531397B2

公开(公告)日：2009-05-12

申请号：US11969079

申请日：2008-01-03

申请人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

发明人： Koichi Tachibana ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

IPC分类号： H01L21/36

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/861 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.

摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。

公开(公告)号：US20080113497A1

公开(公告)日：2008-05-15

申请号：US11969079

申请日：2008-01-03

申请人： Koichi TACHIBANA ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

发明人： Koichi TACHIBANA ,  Chie Hongo ,  Shinya Nunoue ,  Masaaki Onomura

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/861 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/3202 ,  H01S5/32341

摘要： A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.

摘要翻译： 半导体衬底包括GaN衬底和由在GaN衬底上外延生长的III-V族氮化物化合物半导体形成的单晶层。 GaN衬底具有由从{0001}面朝向<1-100>方向的表面偏离角绝对值定义在0.12度至0.35度的范围内的表面取向和绝对值 表面从{0001}面向<11-20>方向的角度位于0.00度至0.06度的范围内。