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    Semiconductor device manufacturing method
    4.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US08575030B2

    公开(公告)日：2013-11-05

    申请号：US13196594

    申请日：2011-08-02

    申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    IPC分类号： H01L21/302

    CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

    摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    6.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20120034846A1

    公开(公告)日：2012-02-09

    申请号：US13196594

    申请日：2011-08-02

    申请人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    发明人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    IPC分类号： B24B51/00

    CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

    摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

    Method of manufacturing semiconductor device
    7.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07825028B2

    公开(公告)日：2010-11-02

    申请号：US12289271

    申请日：2008-10-23

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/7684

    摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

    摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

    Method of manufacturing semiconductor device
    9.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20050218008A1

    公开(公告)日：2005-10-06

    申请号：US11051624

    申请日：2005-01-27

    申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    IPC分类号： B24B37/00 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

    CPC分类号： H01L21/6723 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

    摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面 布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面 用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。