公开(公告)号：US5696392A

公开(公告)日：1997-12-09

申请号：US345318

申请日：1994-11-28

申请人： Kookrin Char ,  Theodore H. Geballe ,  Brian H. Moeckly

发明人： Kookrin Char ,  Theodore H. Geballe ,  Brian H. Moeckly

IPC分类号： C01G1/00 ,  C01G3/00 ,  H01L27/18 ,  H01L39/02 ,  H01L39/22 ,  H01L39/12

CPC分类号： H01L39/225 ,  H01L27/18 ,  Y10S505/702 ,  Y10S505/781

摘要： A conductor suitable for use in oxide-based electronic devices and circuits is disclosed. Metallic oxides having the general composition AMO.sub.3, where A is a rare or alkaline earth or an alloy of rare or alkaline earth elements, and M is a transition metal, exhibit metallic behavior and are compatible with high temperature ceramic processing. Other useful metallic oxides have compositions (A.sub.1-x A'.sub.x)A".sub.2 (M.sub.1-y M'.sub.y).sub.3 O.sub.7-.delta. or (A.sub.1-x A'.sub.x).sub.m (M.sub.1-y M'.sub.y).sub.n O.sub.2m+n, where 0.ltoreq.x, y.ltoreq.1 and 0.5.ltoreq.m, n.ltoreq.3, A and A' are rare or alkaline earths, or alloys of rare or alkaline earths, A' and A" are alkaline earth elements, alloys of alkaline earth elements, rare earth elements, alloys of rare earth elements, or alloys of alkaline earth and rare earth elements, and M and M' are transition metal elements or alloys of transition metal elements. The metallic oxides grow epitaxially on oxide superconductors as well as on substrates and buffer layers commonly used for growth of oxide superconductors. The oxide superconductors can also be grown epitaxially on these metallic oxides. Vastly improved performance of superconductor-normal-superconductor (SNS) junctions in high temperature superconductor materials are obtained when the normal material is a metallic oxide of the type disclosed. In the preferred embodiment, the conducting oxide CaRuO.sub.3 is used as the normal material in an SNS junelion with YBa.sub.2 Cu.sub.3 O.sub.7-.delta. as superconductor. A dc superconducting quantum interference device (SQUID) functioning at 77K fabricated with this type of junction exhibits large modulation and low noise.

摘要翻译： 公开了一种适用于氧化物基电子器件和电路的导体。 具有一般组成AMO3的金属氧化物，其中A是稀土或碱土金属或稀土或碱土金属的合金，M是过渡金属，具有金属性能并与高温陶瓷加工兼容。 其它有用的金属氧化物具有组成（A1-xA'x）A'2（M1-yM'y）3O7-δ或（A1-xA'x）m（M1-yM'y）nO2m + n，其中0 < / = x，y <= 1和0.5

公开(公告)号：US08290553B2

公开(公告)日：2012-10-16

申请号：US13219380

申请日：2011-08-26

申请人： Brian H. Moeckly ,  Ward S. Ruby

发明人： Brian H. Moeckly ,  Ward S. Ruby

IPC分类号： C23C16/448 ,  C23C16/458 ,  H01L39/24 ,  H01L21/00 ,  H01L41/00

CPC分类号： H01L39/2487 ,  C23C14/067 ,  C23C14/24 ,  C23C14/568 ,  H01L39/2451 ,  Y10T29/49014

摘要： A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

摘要翻译： 用于在衬底上制造薄膜的器件包括真空室，被配置为保持真空室内的一个或多个衬底的可旋转压板以及设置在真空室内的壳体。 壳体包含加热元件，并且被构造成封闭压板的上表面，并且下部构造成部分地封闭形成反应区的压板的下表面。 加热的蒸发池可操作地联接到壳体的下部并且被配置成将加压的金属反应物输送到反应区。 该装置包括设置在真空室中并与反应区隔离的沉积区，并且构造成当基底不包含在反应区中时，将沉积物质沉积到基底的暴露下侧。

公开(公告)号：US07317364B2

公开(公告)日：2008-01-08

申请号：US11484254

申请日：2006-07-11

申请人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

发明人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

IPC分类号： H03H7/12 ,  H01B12/02

CPC分类号： H03J1/0008 ,  H03J5/0245 ,  Y10S505/70 ,  Y10S505/866

摘要： A method and apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiO3 may be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

摘要翻译： 公开了一种用于提供低温冷却带通滤波器的动态和远程调谐的方法和装置。 该器件包括谐振元件和电压敏感元件作为窄带滤波器电路中电容的一部分。 可以使用诸如GaAs变容二极管的变容二极管。 或者，可以使用具有诸如SrTiO 3 3这样的电压敏感电介质的电容器。 计算机可以连接到变容二极管以提供自动调谐。 电压敏感电容器可以与谐振器元件成一体。 本发明提供了窄带通滤波器的远程和动态调谐，同时位于其密封的低温冷却环境中。

公开(公告)号：US20090079515A1

公开(公告)日：2009-03-26

申请号：US11970695

申请日：2008-01-08

申请人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

发明人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

IPC分类号： H03H7/12

CPC分类号： H03J1/0008 ,  H03J5/0245 ,  Y10S505/70 ,  Y10S505/866

摘要： An apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiO3 may be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

摘要翻译： 公开了一种用于提供冷却带通滤波器的动态和远程调谐的装置。 该器件包括谐振元件和电压敏感元件作为窄带滤波器电路中电容的一部分。 可以使用诸如GaAs变容二极管的变容二极管。 或者，可以使用具有诸如SrTiO 3的电压敏感电介质的电容器。 计算机可以连接到变容二极管以提供自动调谐。 电压敏感电容器可以与谐振器元件成一体。 本发明提供了窄带通滤波器的远程和动态调谐，同时位于其密封的低温冷却环境中。

公开(公告)号：US07439208B2

公开(公告)日：2008-10-21

申请号：US10726232

申请日：2003-12-01

申请人： Brian H. Moeckly ,  Ward S. Ruby

发明人： Brian H. Moeckly ,  Ward S. Ruby

IPC分类号： H01L39/24 ,  C23C14/34 ,  C23C14/24 ,  B05D5/12

CPC分类号： H01L39/2487 ,  C23C14/067 ,  C23C14/24 ,  C23C14/568 ,  H01L39/2451 ,  Y10T29/49014

摘要： A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

摘要翻译： 在衬底上原位形成MgB 2膜的方法包括以下步骤：（a）在沉积区中将硼沉积到衬底的表面上; （b）将基底移动到含有加压的气态镁的反应区中; （c）将衬底移回沉积区; 和（d）重复步骤（a） - （c）。 在本发明的优选实施例中，使用可旋转压板将衬底移入和移出沉积区和反应区。

公开(公告)号：US20110303153A1

公开(公告)日：2011-12-15

申请号：US13219380

申请日：2011-08-26

申请人： Brian H. Moeckly ,  Ward S. Ruby

发明人： Brian H. Moeckly ,  Ward S. Ruby

IPC分类号： C23C16/448 ,  H01L39/24 ,  H01L41/22 ,  C23C16/458 ,  H01L21/00

CPC分类号： H01L39/2487 ,  C23C14/067 ,  C23C14/24 ,  C23C14/568 ,  H01L39/2451 ,  Y10T29/49014

摘要： A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

摘要翻译： 用于在衬底上制造薄膜的器件包括真空室，被配置为保持真空室内的一个或多个衬底的可旋转压板以及设置在真空室内的壳体。 壳体包含加热元件，并且被构造成封闭压板的上表面，并且下部构造成部分地封闭形成反应区的压板的下表面。 加热的蒸发池可操作地联接到壳体的下部并且被配置成将加压的金属反应物输送到反应区。 该装置包括设置在真空室中并与反应区隔离的沉积区，并且构造成当基底不包含在反应区中时，将沉积物质沉积到基底的暴露下侧。

公开(公告)号：US07117025B2

公开(公告)日：2006-10-03

申请号：US10162531

申请日：2002-06-03

申请人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

发明人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

IPC分类号： H03H7/01

CPC分类号： H03J1/0008 ,  H03J5/0245 ,  Y10S505/70 ,  Y10S505/866

摘要： A method and apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiO3 may be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

摘要翻译： 公开了一种用于提供低温冷却带通滤波器的动态和远程调谐的方法和装置。 该器件包括谐振元件和电压敏感元件作为窄带滤波器电路中电容的一部分。 可以使用诸如GaAs变容二极管的变容二极管。 或者，可以使用具有诸如SrTiO 3 3这样的电压敏感电介质的电容器。 计算机可以连接到变容二极管以提供自动调谐。 电压敏感电容器可以与谐振器元件成一体。 本发明提供了窄带通滤波器的远程和动态调谐，同时位于其密封的低温冷却环境中。

公开(公告)号：US08022012B2

公开(公告)日：2011-09-20

申请号：US12209142

申请日：2008-09-11

申请人： Brian H. Moeckly ,  Ward S. Ruby

发明人： Brian H. Moeckly ,  Ward S. Ruby

IPC分类号： H01L39/24 ,  H01L21/31 ,  C23C14/00 ,  C23C16/00 ,  B05D5/12

CPC分类号： H01L39/2487 ,  C23C14/067 ,  C23C14/24 ,  C23C14/568 ,  H01L39/2451 ,  Y10T29/49014

摘要： A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

摘要翻译： 用于在衬底上制造薄膜的器件包括真空室，被配置为保持真空室内的一个或多个衬底的可旋转压板以及设置在真空室内的壳体。 壳体包含加热元件，并且被构造成封闭压板的上表面，并且下部构造成部分地封闭形成反应区的压板的下表面。 加热的蒸发池可操作地联接到壳体的下部并且被配置成将加压的金属反应物输送到反应区。 该装置包括设置在真空室中并与反应区隔离的沉积区，并且构造成当基底不包含在反应区中时，将沉积物质沉积到基底的暴露下侧。

公开(公告)号：US07738933B2

公开(公告)日：2010-06-15

申请号：US11970695

申请日：2008-01-08

申请人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

发明人： Chien-Fu Shih ,  Yongming Zhang ,  Brian H. Moeckly

IPC分类号： H03H7/12 ,  H01B12/02

CPC分类号： H03J1/0008 ,  H03J5/0245 ,  Y10S505/70 ,  Y10S505/866

摘要： An apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiO3 may be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

摘要翻译： 公开了一种用于提供冷却带通滤波器的动态和远程调谐的装置。 该器件包括谐振元件和电压敏感元件作为窄带滤波器电路中电容的一部分。 可以使用诸如GaAs变容二极管的变容二极管。 或者，可以使用具有诸如SrTiO 3的电压敏感电介质的电容器。 计算机可以连接到变容二极管以提供自动调谐。 电压敏感电容器可以与谐振器元件成一体。 本发明提供了窄带通滤波器的远程和动态调谐，同时位于其密封的低温冷却环境中。

公开(公告)号：US20090068355A1

公开(公告)日：2009-03-12

申请号：US12209142

申请日：2008-09-11

申请人： Brian H. Moeckly ,  Ward S. Ruby

发明人： Brian H. Moeckly ,  Ward S. Ruby

IPC分类号： C23C16/458

CPC分类号： H01L39/2487 ,  C23C14/067 ,  C23C14/24 ,  C23C14/568 ,  H01L39/2451 ,  Y10T29/49014

摘要： A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

摘要翻译： 用于在衬底上制造薄膜的器件包括真空室，被配置为保持真空室内的一个或多个衬底的可旋转压板以及设置在真空室内的壳体。 壳体包含加热元件，并且构造成包围压板的上表面，并且构造成部分地包围形成反应区的压板的下表面的下部。 加热的蒸发池可操作地联接到壳体的下部并且被配置成将加压的金属反应物输送到反应区。 该装置包括设置在真空室中并与反应区隔离的沉积区，并且构造成当基底不包含在反应区中时，将沉积物质沉积到基底的暴露下侧。