公开(公告)号：US5448113A

公开(公告)日：1995-09-05

申请号：US352856

申请日：1994-12-02

申请人： Kouei Suzuki ,  Kouichi Ohtaka ,  Ikue Kawashima ,  Shuichi Hikichi

发明人： Kouei Suzuki ,  Kouichi Ohtaka ,  Ikue Kawashima ,  Shuichi Hikichi

IPC分类号： H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54

CPC分类号： H01L23/5329 ,  H01L23/53214 ,  H01L2924/0002

摘要： A micro metal-wiring construction comprises a substrate having a first insulating layer thereon, a metal wiring formed on the first insulating layer of the substrate, and a second insulating layer covering the metal wiring. The coefficient of thermal expansion of the metal wiring is greater than those of the first and the second insulating layers. Intersection lines formed between grain boundaries of the metal wiring and a surface of the first insulating layer is nearly perpendicular to an extending direction of the metal wiring and an angle between grain boundary planes and a line that is perpendicular to a surface of the first insulating layer is greater than 20 degrees. Metal-wiring having a good resistance against stress-induced-migration is obtained by providing when this angle is greater than 20.degree..

摘要翻译： 微金属布线结构包括其上具有第一绝缘层的基板，形成在基板的第一绝缘层上的金属布线和覆盖金属布线的第二绝缘层。 金属布线的热膨胀系数大于第一和第二绝缘层的热膨胀系数。 在金属布线的晶界与第一绝缘层的表面之间形成的交叉线与金属布线的延伸方向大致垂直，并且晶界平面与垂直于第一绝缘层表面的线之间的角度 大于20度。 当该角度大于20°时，可以获得具有良好抗应力诱导迁移性的金属布线。