公开(公告)号：US09128286B2

公开(公告)日：2015-09-08

申请号：US13429470

申请日：2012-03-26

申请人： Kouhei Takahashi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda ,  Takuo Kaitoh ,  Katsumi Matsumoto

发明人： Kouhei Takahashi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda ,  Takuo Kaitoh ,  Katsumi Matsumoto

IPC分类号： G02B26/02 ,  G09G3/34 ,  G02B26/08

CPC分类号： G02B26/02 ,  G02B26/0841 ,  G09G3/3433 ,  G09G2300/08

摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

公开(公告)号：US20120287494A1

公开(公告)日：2012-11-15

申请号：US13429470

申请日：2012-03-26

申请人： Kouhei Takahashi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda ,  Takuo Kaitoh ,  Katsumi Matsumoto

发明人： Kouhei Takahashi ,  Takeshi Kuriyagawa ,  Daisuke Sonoda ,  Takuo Kaitoh ,  Katsumi Matsumoto

IPC分类号： G02B26/02 ,  C23C8/10 ,  C23C8/12 ,  G02B5/00

CPC分类号： G02B26/02 ,  G02B26/0841 ,  G09G3/3433 ,  G09G2300/08

摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

公开(公告)号：US20080203568A1

公开(公告)日：2008-08-28

申请号：US12068191

申请日：2008-02-04

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/49

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.

摘要翻译： 实现了在较高温度下接合线和电极焊盘之间的接合区域的可靠性的改善。 半导体器件100包括设置在半导体芯片102中并且包含Al作为主要成分并另外包含铜（Cu）的半导体芯片102，AlCu焊盘107以及用作连接的耦合部件的CuP线111 在半导体芯片102的外侧设置有半导体芯片102的内部引线117，并且主要包含Cu。 AlCu焊盘107和CuP导线111用基本上不含卤素的封装树脂115封装。

公开(公告)号：US08395261B2

公开(公告)日：2013-03-12

申请号：US13530383

申请日：2012-06-22

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/28

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

摘要翻译： 半导体器件包括设置在半导体芯片上的电极焊盘，所述电极焊盘包括铝（Al）的50重量％ 和99.9％wt。 并且还包括铜（Cu），主要包括Cu的耦合球，耦合球耦合到电极焊盘，使得CuAl 2层，CuAl层，包括Cu9Al4和Cu3Al2中的一个的层以及耦合球是垂直的 以及包含小于或等于1000ppm的卤素的封装树脂，至少覆盖电极焊盘的封装树脂和电极焊盘与联接球之间的连接点。

公开(公告)号：US08299620B2

公开(公告)日：2012-10-30

申请号：US12163055

申请日：2008-06-27

申请人： Takekazu Tanaka ,  Kouhei Takahashi

发明人： Takekazu Tanaka ,  Kouhei Takahashi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/80 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/8485 ,  H01L2224/85214 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/83205 ,  H01L2924/00012

摘要： A semiconductor device and a manufacturing method for preventing mechanical and thermal damage to the semiconductor chip. A laser beam welds a first connection pad formed on a first external lead to a first electrode formed on the surface of the semiconductor chip. A first connection hole is formed in the first connection pad, and the first connection hole overlaps the first connection electrode. A laser beam irradiates an area including the first connection hole, and the first connection pad in a portion around the first connection hole is melted to form a melting section, that is welded to the first connection electrode to easily form a semiconductor device with more excellent electrical characteristics.

摘要翻译： 一种用于防止对半导体芯片的机械和热损伤的半导体器件和制造方法。 激光束将形成在第一外部引线上的第一连接焊盘焊接到形成在半导体芯片的表面上的第一电极。 在第一连接焊盘中形成第一连接孔，第一连接孔与第一连接电极重叠。 激光束照射包括第一连接孔的区域，并且在第一连接孔周围的部分中的第一连接焊盘熔化以形成熔化部分，其被焊接到第一连接电极以容易地形成具有更优异的半导体器件 电气特性。

公开(公告)号：US07820489B2

公开(公告)日：2010-10-26

申请号：US11727008

申请日：2007-03-23

申请人： Takekazu Tanaka ,  Kouhei Takahashi

发明人： Takekazu Tanaka ,  Kouhei Takahashi

IPC分类号： H01L21/00

CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/80 ,  H01L24/84 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/16245 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37155 ,  H01L2224/37164 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73221 ,  H01L2224/81224 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacturing a semiconductor apparatus includes forming an electrode on a semiconductor device, forming a conductive bump on the electrode, placing an external wire on the conductive bump, and laser-welding the external wire and the conductive bump to establish electrical connection.

摘要翻译： 一种制造半导体装置的方法包括在半导体器件上形成电极，在电极上形成导电凸块，将外部导线放置在导电凸块上，激光焊接外部导线和导电凸块以建立电连接。

公开(公告)号：US20070172980A1

公开(公告)日：2007-07-26

申请号：US11650495

申请日：2007-01-08

申请人： Takekazu Tanaka ,  Kouhei Takahashi

发明人： Takekazu Tanaka ,  Kouhei Takahashi

IPC分类号： H01L21/00

CPC分类号： H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/80 ,  H01L24/84 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/37164 ,  H01L2224/4007 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The semiconductor apparatus includes a semiconductor chip, and a source electrode and a gate electrode which are formed on the semiconductor chip and electrically connected with a lead frame. The source electrode is electrically connected with the lead frame by being laser-welded with a thin-film shaped connecting portion formed at an end of the lead frame. This enables the provision of a semiconductor apparatus with enhanced productivity and yields which exhibits high electrical operability and reliability.

摘要翻译： 半导体装置包括形成在半导体芯片上并与引线框架电连接的半导体芯片和源电极和栅电极。 源电极通过激光焊接而形成在引线框架的端部处的薄膜形连接部分与引线框架电连接。 这使得能够提供具有高电气可操作性和可靠性的提高的生产率和产量的半导体装置。

公开(公告)号：US20120306077A1

公开(公告)日：2012-12-06

申请号：US13530383

申请日：2012-06-22

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/498

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

摘要翻译： 半导体器件包括设置在半导体芯片上的电极焊盘，所述电极焊盘包括铝（Al）的50重量％ 和99.9％wt。 并且还包括铜（Cu），主要包括Cu的耦合球，耦合球耦合到电极焊盘，使得CuAl 2层，CuAl层，包括Cu9Al4和Cu3Al2中的一个的层以及耦合球是垂直的 以及包含小于或等于1000ppm的卤素的封装树脂，至少覆盖电极焊盘的封装树脂和电极焊盘与联接球之间的连接点。

公开(公告)号：US07944052B2

公开(公告)日：2011-05-17

申请号：US12805511

申请日：2010-08-03

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2 layer formed on the electrode pad, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

摘要翻译： 半导体器件包括半导体芯片，设置在半导体芯片中的电极焊盘，其中电极焊盘包括Al作为主要成分，并且还包括耦合到电极焊盘的Cu，耦合部件主要包括Cu 形成在电极焊盘和耦合部件之间的多层Cu和Al合金，以及封装树脂，其包含小于或等于1000ppm的卤素，其中封装树脂封装在半导体芯片上，电极焊盘 ，以及联接构件。 多层Cu和Al合金包括形成在电极焊盘上的CuAl2层，形成在CuAl2层上的CuAl层，以及包含在CuAl层上形成的Cu9Al4和Cu3Al2之一的层。

公开(公告)号：US07791198B2

公开(公告)日：2010-09-07

申请号：US12068191

申请日：2008-02-04

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.

摘要翻译： 实现了在较高温度下接合线和电极焊盘之间的接合区域的可靠性的改善。 半导体器件100包括设置在半导体芯片102中并且包含Al作为主要成分并另外包含铜（Cu）的半导体芯片102，AlCu焊盘107以及用作连接的耦合部件的CuP线111 在半导体芯片102的外侧设置有半导体芯片102的内部引线117，并且主要包含Cu。 AlCu焊盘107和CuP导线111用基本上不含卤素的封装树脂115封装。