摘要:
A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
摘要:
After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.
摘要翻译:在形成铁电电容器之后,形成连接到铁电电容器的Al布线(导电焊盘)。 然后,在Al布线周围形成氧化硅膜和氮化硅膜。 此后,作为抑制水分渗透到氧化硅膜中的渗透抑制膜,形成Al 2 O 3膜。
摘要:
After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an Al2O3 film is formed.
摘要翻译:在形成铁电电容器之后,形成连接到铁电电容器的Al布线(导电焊盘)。 然后,在Al布线周围形成氧化硅膜和氮化硅膜。 此后,作为抑制水分渗透到氧化硅膜中的渗透抑制膜,形成Al 2 O 3 3膜。
摘要:
According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要:
According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
摘要:
An apparatus for producing metal oxide nanofibers includes a jetting unit, a mixing unit, a heating unit, and a cooling unit. The jetting unit jets particles made of a metal. The mixing unit prepares a mixture by mixing the metal particles and a gas containing an oxidizing component that includes oxygen in molecules of the component. The heating unit heats the mixture to raise the temperature of the mixture up to a temperature at which the metal evaporates. The cooling unit cools the product thus-produced in the heating unit.
摘要:
Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.
摘要:
A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40° C.
摘要:
There are provided a mobile terminal device and a positioning method, in which power saving is enabled. When an environment estimating unit determines that the mobile terminal device is currently located in an indoor environment, an autonomous GPS positioning regulating unit thereof regulates implementation of an autonomous positioning operation by an autonomous GPS positioning unit to enable the suppression of wasteful power consumption caused by the implementation of the autonomous GPS positioning operation that has no possibility of being successful at a current time. In the meanwhile, an assist information acquiring processing unit of an A-GPS positioning unit is made to perform an assist information acquiring process that is a former process of the A-GPS positioning operation. When the location accuracy of outline location information acquired has a good result of a level 3 or higher, the outline location information is provided as a positioning result.
摘要:
The present invention pertains to a mobile terminal having an autonomous navigation function, said mobile terminal comprising: a map application which performs map matching on the current position of the mobile terminal on a route to a destination; a measurement unit which detects the movement of the mobile terminal, and which provides sensor information representing the number of steps and travel direction; a position calculation unit which determines the current position of the mobile terminal; a travel direction correction unit which, when it has been estimated that a user is walking straight by determining whether the amount of change of the user's travel direction is within a prescribed range in a prescribed period, corrects the user's travel direction according to the orientation of the straight parts when the user is walking straight on the route; and a current position correction unit which, on the basis of the corrected travel direction and the starting time and starting point when walking straight, recalculates the current position of the mobile terminal from the starting point, and corrects the current position of the mobile terminal according to the recalculated current position.