公开(公告)号：US20070249158A1

公开(公告)日：2007-10-25

申请号：US11808667

申请日：2007-06-12

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L21/4763

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US07750478B2

公开(公告)日：2010-07-06

申请号：US11808667

申请日：2007-06-12

申请人： Koujiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Koujiro Kameyama ,  Akira Suzuki ,  Yoshio Okayama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US07732925B2

公开(公告)日：2010-06-08

申请号：US11055707

申请日：2005-02-11

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L29/40

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背面的部分。

公开(公告)号：US20050189637A1

公开(公告)日：2005-09-01

申请号：US11055707

申请日：2005-02-11

申请人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

发明人： Yoshio Okayama ,  Akira Suzuki ,  Koujiro Kameyama ,  Mitsuo Umemoto ,  Kenji Takahashi ,  Hiroshi Terao ,  Masataka Hoshino

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L23/495

CPC分类号： H01L24/12 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05599

摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

摘要翻译： 提供了可靠性提高的半导体器件及其制造方法。 本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板 电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径 靠近半导体衬底的背表面的部分。

公开(公告)号：US07416963B2

公开(公告)日：2008-08-26

申请号：US11182055

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

发明人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L29/40 ,  H01L23/52 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05548

摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

摘要翻译： 本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。 第一绝缘膜形成在半导体衬底的顶表面上。 蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。 然后在开口和第一绝缘膜上形成焊盘电极。 第二绝缘膜形成在半导体衬底的背面上。 然后形成具有比开口大的孔的通孔。 并且在通孔和第二绝缘膜上形成第三绝缘膜。 对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。 之后，在通孔中形成通孔电极和布线层。 最后，将半导体衬底切割并分离成多个半导体管芯。

公开(公告)号：US20060033168A1

公开(公告)日：2006-02-16

申请号：US11182055

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

发明人： Mitsuo Umemoto ,  Yoshio Okayama ,  Kazumasa Tanida ,  Hiroshi Terao ,  Yoshihiko Nemoto

IPC分类号： H01L29/76

CPC分类号： H01L21/76898 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/05548

摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

摘要翻译： 本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。 第一绝缘膜形成在半导体衬底的顶表面上。 蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。 然后在开口和第一绝缘膜上形成焊盘电极。 第二绝缘膜形成在半导体衬底的背面上。 然后形成具有比开口大的孔的通孔。 并且在通孔和第二绝缘膜上形成第三绝缘膜。 对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。 之后，在通孔中形成通孔电极和布线层。 最后，将半导体衬底切割并分离成多个半导体管芯。

公开(公告)号：US07094701B2

公开(公告)日：2006-08-22

申请号：US11182024

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

发明人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

IPC分类号： H10L22/302

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

摘要翻译： 提供具有通孔电极的半导体器件的制造方法，以提高半导体器件的可靠性和产量。 穿过半导体衬底的通孔形成在对应于焊盘电极的位置处。 绝缘膜形成在半导体衬底的背面和通孔的表面上。 在半导体基板的背面形成有在通孔的边缘处具有突出部的加强绝缘膜。 通过使用加强绝缘膜作为掩模的蚀刻来除去通孔底部的绝缘膜，同时保留通孔侧壁上的绝缘膜。 通孔电极，布线层和导电端子形成在半导体衬底的背面和通孔上。 最后，半导体衬底通过切割被分成多个半导体晶片。

公开(公告)号：US20060024966A1

公开(公告)日：2006-02-02

申请号：US11182024

申请日：2005-07-15

申请人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

发明人： Mitsuo Umemoto ,  Masataka Hoshino ,  Hiroshi Terao

IPC分类号： H01L21/302

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

公开(公告)号：US20090234073A1

公开(公告)日：2009-09-17

申请号：US11920158

申请日：2006-05-10

申请人： Shigekazu Matsui ,  Sadahiko Matsuura ,  Haruyuki Makio ,  Seiichi Ishii ,  Hiroshi Terao ,  Hidetatsu Murakami ,  Takashi Hakuta ,  Terunori Fujita

发明人： Shigekazu Matsui ,  Sadahiko Matsuura ,  Haruyuki Makio ,  Seiichi Ishii ,  Hiroshi Terao ,  Hidetatsu Murakami ,  Takashi Hakuta ,  Terunori Fujita

IPC分类号： C08F8/00 ,  C08F212/06 ,  C08F4/42 ,  C08F2/00

CPC分类号： C08F210/00 ,  C08F10/00 ,  C08F210/02 ,  C08F210/16 ,  C08K5/54 ,  C08L23/0823 ,  C09K3/10 ,  C09K2200/0617 ,  C08L23/08 ,  C08F232/00 ,  C08F2500/03 ,  C08F2500/25 ,  C08F2500/20 ,  C08F210/06 ,  C08F4/64048

摘要： An α-olefin/non-conjugated cyclic polyene copolymer (A) includes structural units (I) derived from an α-olefin and structural units (H) derived from a vinyl group-containing cyclic olefin. The copolymer has a molecular weight distribution (Mw/Mn) of not more than 2.7 and is amorphous or low crystalline with a crystalline heat of fusion (ΔH) of less than 90 kJ/kg. The copolymer is efficiently produced using a specific transition metal catalyst that has a ligand with a phenoxyimine skeleton. The copolymer of the invention has a narrower molecular weight distribution and a higher content of vinyl groups as compared with existing copolymers. The copolymer can then give crosslinked products having excellent tensile properties. The copolymer is also used as a plasticizer for polymers such as rubbers, and provides excellent processability and superior mechanical strength and rubber elasticity of crosslinked products. By converting the vinyl groups in the copolymer to polar groups, various functional polyolefin materials are obtained.

摘要翻译： α-烯烃/非共轭环状多烯共聚物（A）包括衍生自α-烯烃的结构单元（I）和衍生自含乙烯基的环状烯烃的结构单元（H）。 共聚物的分子量分布（Mw / Mn）不超过2.7，是晶体结晶热（DeltaH）小于90kJ / kg的无定形或低结晶。 使用具有苯氧基亚胺骨架的配体的特定的过渡金属催化剂有效地制备共聚物。 与现有的共聚物相比，本发明的共聚物具有更窄的分子量分布和更高的乙烯基含量。 然后共聚物可以得到具有优异拉伸性能的交联产物。 该共聚物也可用作聚合物如橡胶的增塑剂，并提供优异的加工性能和优异的机械强度和交联产品的橡胶弹性。 通过将共聚物中的乙烯基转化为极性基团，得到各种功能聚烯烃材料。

公开(公告)号：US20090209721A1

公开(公告)日：2009-08-20

申请号：US12379143

申请日：2009-02-13

申请人： Satoshi Ikeda ,  Akihiro Matsuda ,  Yoshiki Shimokawatoko ,  Junichi Mohri ,  Toshiyuki Shimazaki ,  Hiroshi Terao ,  Koji Takeda

发明人： Satoshi Ikeda ,  Akihiro Matsuda ,  Yoshiki Shimokawatoko ,  Junichi Mohri ,  Toshiyuki Shimazaki ,  Hiroshi Terao ,  Koji Takeda

IPC分类号： C08F210/14 ,  C08F210/06 ,  C08F210/08

CPC分类号： C10M143/08 ,  C08F4/65912 ,  C08F4/65927 ,  C08F210/16 ,  C10M143/00 ,  C10M2203/1006 ,  C10M2205/022 ,  C10N2220/022 ,  C10N2230/02 ,  C08F4/65904 ,  C08F210/06 ,  C08F2500/20 ,  C08F2500/03 ,  C08F2500/17 ,  C08F2500/08 ,  C10M2205/028

摘要： Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers.A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 α-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm≧1073×D−893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (ΔThalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (ΔThalf) and the melting point (Tm) satisfy the equation: ΔThalf≦−0.71×Tm+101.4; (6) the heat of fusion (ΔH) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.; (8) the heat of fusion (ΔH), the crystallization temperature (Tc), each measured by DSC and the crystallization temperature measured by a CRYSTAF method (Tcrystaf) satisfy the equation: Tc−Tcrystaf≧0.028×ΔH+25.3.

摘要翻译： 当用作润滑油粘度调节剂时，共聚物使润滑油显示出优异的低温性能。 公开了制备共聚物的方法。 润滑油粘度调节剂和润滑油组合物含有共聚物。 共聚物包括衍生自乙烯的结构单元和衍生自C3-20α-烯烃的结构单元，并且满足以下要求（1）至（8）：（1）根据DSC的熔点（Tm）在 0〜60℃。 （2）熔点（Tm）和密度D（g / cm 3）满足下式：Tm> = 1073×D-893; （3）根据GPC的Mw / Mn为1.6〜5.0; （4）通过DSC测定的熔融峰的半值宽度（DeltaThalf）不大于90℃。 （5）半值宽度（DeltaThalf）和熔点（Tm）满足以下等式：DeltaThalf <= -0.71xTm + 101.4; （6）通过DSC测定的熔解热（DeltaH）不大于60J / g; （7）通过DSC测定的结晶温度（Tc）为70℃以下。 （8）通过DSC测定的各自测量的结晶温度（Tc），通过CRYSTAF法（Tcrystaf）测定的结晶温度满足下列公式：<？in-line-formula description =“In- 线公式“end =”lead“？> Tc-Tcrystaf> = 0.028xDeltaH + 25.3。<？in-line-formula description =”In-line Formulas“end =”tail“？>