公开(公告)号：US20140227159A1

公开(公告)日：2014-08-14

申请号：US14129576

申请日：2012-07-03

申请人： Kouki Ichitsubo ,  Kenta Masuda ,  Masakazu Suzuki ,  Kohei Kawano ,  Atsushi Kumasaka

发明人： Kouki Ichitsubo ,  Kenta Masuda ,  Masakazu Suzuki ,  Kohei Kawano ,  Atsushi Kumasaka

IPC分类号： C01B31/36

CPC分类号： C01B31/36 ,  C01B32/956 ,  C01B33/193 ,  C01P2002/72 ,  C01P2004/01 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2006/80

摘要： A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.

摘要翻译： 提供了由二氧化硅和碳组成的颗粒，其杂质含量低，反应性优异。 还提供了一种生产二氧化硅和含碳材料的方法，包括：（B）将具有至少10重量％的液体部分中的硅浓度的碱金属硅酸盐水溶液与碳混合的碳混合步骤，以获得 含碳酸碱水溶液; 和（C）二氧化硅回收步骤，将含碳水溶性碱金属硅酸盐溶液与无机酸混合，以使液体部分内的碳和硅沉淀为由二氧化硅和碳形成的颗粒，从而获得含有颗粒的液体 物质，然后固液分离液体物质，以获得二氧化硅和含碳材料的固体部分，其是由二氧化硅和碳形成的颗粒的组合和含有杂质的液体部分。

公开(公告)号：US09556035B2

公开(公告)日：2017-01-31

申请号：US14129576

申请日：2012-07-03

申请人： Kouki Ichitsubo ,  Kenta Masuda ,  Masakazu Suzuki ,  Kohei Kawano ,  Jun Kumasaka

发明人： Kouki Ichitsubo ,  Kenta Masuda ,  Masakazu Suzuki ,  Kohei Kawano ,  Jun Kumasaka

IPC分类号： C01B31/36 ,  C01B33/193

CPC分类号： C01B31/36 ,  C01B32/956 ,  C01B33/193 ,  C01P2002/72 ,  C01P2004/01 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2006/80

摘要： A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.

摘要翻译： 提供了由二氧化硅和碳组成的颗粒，其杂质含量低，反应性优异。 还提供了一种生产二氧化硅和含碳材料的方法，包括：（B）将具有至少10重量％的液体部分中的硅浓度的碱金属硅酸盐水溶液与碳混合的碳混合步骤，以获得 含碳酸碱水溶液; 和（C）二氧化硅回收步骤，将含碳水溶性碱金属硅酸盐溶液与无机酸混合，以使液体部分内的碳和硅沉淀为由二氧化硅和碳形成的颗粒，从而获得含有颗粒的液体 物质，然后固液分离液体物质，以获得二氧化硅和含碳材料的固体部分，其是由二氧化硅和碳形成的颗粒的组合和含有杂质的液体部分。

公开(公告)号：US09382121B2

公开(公告)日：2016-07-05

申请号：US14239555

申请日：2012-08-23

申请人： Kenta Masuda ,  Kouki Ichitsubo ,  Kohei Kawano ,  Masakazu Suzuki ,  Jun Kumasaka ,  Hideaki Tanaka

发明人： Kenta Masuda ,  Kouki Ichitsubo ,  Kohei Kawano ,  Masakazu Suzuki ,  Jun Kumasaka ,  Hideaki Tanaka

IPC分类号： C04B2/00 ,  C04B7/00 ,  C04B14/00 ,  C04B22/00 ,  C04B26/00 ,  C04B33/00 ,  C04B103/00 ,  B82Y30/00 ,  C01B31/36 ,  C04B35/573 ,  C04B35/626

CPC分类号： C01B31/36 ,  B82Y30/00 ,  C01B32/956 ,  C04B35/573 ,  C04B35/62695 ,  C04B2235/3418 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/5427 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/72 ,  C04B2235/727

摘要： A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

摘要翻译： 高纯度碳化硅粉末及其制造方法能够以低成本以安全的方式批量生产高纯度碳化硅粉末。 碳化硅粉末中的杂质含量为500ppm以下。 可以通过使用发热体在Acheson炉中加热碳化硅生产用原料来获得碳化硅粉末。 通过混合硅质原料和碳质原料制备碳化硅生产原料。 碳化硅生产原料含有2.5〜4.0的混合摩尔比（C / SiO 2）的硅质原料和碳质原料，杂质含量为120ppm以下。

公开(公告)号：US20140301933A1

公开(公告)日：2014-10-09

申请号：US14239555

申请日：2012-08-23

申请人： Kenta Masuda ,  Kouki Ichitsubo ,  Kohei Kawano ,  Masakazu Suzuki ,  Jun Kumasaka ,  Hideaki Tanaka

发明人： Kenta Masuda ,  Kouki Ichitsubo ,  Kohei Kawano ,  Masakazu Suzuki ,  Jun Kumasaka ,  Hideaki Tanaka

IPC分类号： C01B31/36

CPC分类号： C01B31/36 ,  B82Y30/00 ,  C01B32/956 ,  C04B35/573 ,  C04B35/62695 ,  C04B2235/3418 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/5427 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/72 ,  C04B2235/727

摘要： A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

摘要翻译： 高纯度碳化硅粉末及其制造方法能够以低成本以安全的方式批量生产高纯度碳化硅粉末。 碳化硅粉末中的杂质含量为500ppm以下。 可以通过使用发热体在Acheson炉中加热碳化硅生产用原料来获得碳化硅粉末。 通过混合硅质原料和碳质原料制备碳化硅生产原料。 碳化硅生产原料含有2.5〜4.0的混合摩尔比（C / SiO 2）的硅质原料和碳质原料，杂质含量为120ppm以下。

公开(公告)号：US20100259201A1

公开(公告)日：2010-10-14

申请号：US12756176

申请日：2010-04-07

申请人： Makoto KAWANO ,  Katsutoshi Bito ,  Atsushi Mitamura ,  Kohei Kawano

发明人： Makoto KAWANO ,  Katsutoshi Bito ,  Atsushi Mitamura ,  Kohei Kawano

IPC分类号： H05B37/02 ,  H01L27/06

CPC分类号： H01L25/165 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： The size of a light emitting device is reduced. The light emitting device for flash photography includes: a luminescent xenon tube; IGBT for the discharge switch of the xenon tube; a capacitor for discharging the xenon tube; and MOSFET for the charge switch of the capacitor. A semiconductor device used in this light emitting device is obtained by sealing the following in a package: a semiconductor chip in which the IGBT is formed; a semiconductor chip in which the MOSFET is formed; a semiconductor chip in which a drive circuit of the IGBT and a control circuit of the MOSFET are formed; and multiple leads coupled thereto.

摘要翻译： 发光装置的尺寸减小。 用于闪光摄影的发光装置包括：发光氙灯管; IGBT用于氙气管的放电开关; 用于放电氙管的电容器; 和MOSFET用于电容器的充电开关。 在该发光器件中使用的半导体器件通过在封装中密封以下来获得：形成IGBT的半导体芯片; 形成MOSFET的半导体芯片; 形成IGBT的驱动电路和MOSFET的控制电路的半导体芯片; 和多个引线耦合到其上。